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論文名稱 Title |
由氧化鋅奈米結構轉變為氧化鋅薄膜 Transformation from ZnO Nanostructures to ZnO Films |
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系所名稱 Department |
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畢業學年期 Year, semester |
語文別 Language |
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學位類別 Degree |
頁數 Number of pages |
81 |
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研究生 Author |
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指導教授 Advisor |
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召集委員 Convenor |
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口試委員 Advisory Committee |
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口試日期 Date of Exam |
2013-07-12 |
繳交日期 Date of Submission |
2013-07-19 |
關鍵字 Keywords |
水溶液沉積法、氧化鋅薄膜、氮化鎵基板、藍寶石基板 aqueous solution deposited, Zinc oxide thin film, sapphire substrate, GaN substrate |
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統計 Statistics |
本論文已被瀏覽 5655 次,被下載 0 次 The thesis/dissertation has been browsed 5655 times, has been downloaded 0 times. |
中文摘要 |
本研究利用水溶液沉積法此種較低成本且低溫的製程將氧化鋅薄膜成長於濺鍍氧化鋅結核層的氮化鎵和藍寶石基板。再藉由笑氣的低溫回火提高氧化鋅薄膜的紫外光激發,並改善結晶構造,減少缺陷。 在物性方面,我們利用掃描式電子顯微鏡探討薄膜表面型態、切面型態和薄膜厚度,利用X射線光電子能譜儀探討元素比例和表面特性結晶品質,最後再利用霍爾量測了解薄膜型態、電阻率和載子遷移率。在光學性質方面,我們利用微螢光光譜量測探討吸收光譜和原子原子空缺。 |
Abstract |
In this study, we prepare the Zinc oxide (ZnO) thin film with aqueous solution deposited (ASD) on GaN and sapphire substrates by sputtered ZnO nucleation layer. Annealing with N2O at 300°C for 1 hour to increase the UV emission and decrease the defects. The physical characteristics, the morphology and thickness of ZnO films we obtained by the analyses of field emission scanning electron microscopic (FE-SEM) . The physical properties were characterized by X-ray diffraction (XRD). The film types, resistivity and the mobility were characterized by Hall measurement. In optical properties, the photoluminescence spectrometer (Micro-PL) was used to measure the photoluminescence characteristics and the vacancies. |
目次 Table of Contents |
論文審定書 i ACKNOWLEDGMENT ii 摘 要 iii ABSTRACT iv CONTENTS v LIST OF FIGURES viii 1.Introduction 1 1-1 Background of ZnO 2 1-2 Growth mechanism in ASD-ZnO 2 1-3 Application of Zinc Oxide ZnO 3 1-4 Principle of thin-film deposition 6 1-5 Advantage of ASD 8 2.Experiments 12 2-1 Substrate cleaning procedures 12 2-1-1 Cleaning of GaN substrate procedures 12 2-1-2 Cleaning of sapphire substrate procedures 12 2-1-3 Cleaning of sillicon substrate procedures 13 2-1-4 Cleaning of glass substrate procedures.........................................13 2-2 ZnO nucleation layer prepared by RF sputtering 14 2-2-1 Sputtering technique 14 2-2-2 RF sputtering 15 2-2-3 ZnO nucleation layer prepared with ZnO target by RF sputtering 16 2-3 ASD deposition system 16 2-4 ZnO film deposition 27 2-5 Characterization 27 2-5-1 Physical properties 27 2-5-2 Electrical properties 27 2-5-3 Optical properties 27 3.Characterization of ASD-ZnO films 27 3-1 Comparison of ZnO nanorod array on GaN substrate without sputtered ZnO 27 3-1-1 FE-SEM morphologies for ZnO nanorod array on GaN substrate without sputtered ZnO 27 3-1-2 Micro-PL of ZnO nanorod array on GaN substrate without sputtered ZnO 27 3-2 Transformation of ZnO nanorod array into film on GaN substrate 28 3-2-1 FE-SEM morphologies for transformation of ZnO nanorod array into film on GaN substrate 27 3-2-2 Micro-PL spectrum for ASD-ZnO thin film on GaN substrate e 27 3-2-3 XRD spectrum for ASD-ZnO thin film on GaN substrate 27 3-3 ZnO nanorod array on sputtered ZnO/sapphire substrate at different temperature 29 3-4 Transformation of ZnO nanorod array into film on sapphire substrate. 30 3-4-1 FE-SEM morphologies for transformation of ZnO nanorod array into film on sapphire substrate 30 3-4-2 Micro-PL spectrum for ASD-ZnO thin film on sapphire substrate 30 3-4-3 XRD spectrum for ASD-ZnO thin film on sapphire substrate 31 3-4-4 Hall measurement of ZnO film on sapphire substrate 31 3-5 Comparison of ZnO nanorod array on different substrates. 31 3-5-1 FE-SEM morphologies for ZnO nanorod array on different substrates 32 3-5-2 XRD spectrum for ZnO nanorod array on different substrates 32 4.Conclusions 63 References 64 |
參考文獻 References |
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