我們利用光纖光譜儀去量測光調製反射光譜(PR,Photoreflectance)。傳統的光調製反射光譜可用於量測半導體的能隙大小、內建電場及躍遷形式，但是在作法上需要將各個波長分開量測，有著需要消耗大量時間的缺點。當我們使用光纖光譜儀去量測光調製反射光譜時，因為光纖光譜儀有著可以同時測量多個波長強度的特性，可以有效地降低傳統光調製反射光譜高耗時的缺點。這次實驗主要是利用光纖光譜儀去讀取砷化鎵(GaAs)的光調製反射光譜，之後再將讀取到的資料以快速傅利葉轉換(FFT)的方式找出反射率的變化曲線。

We use optical fiber spectrometer to measure the optical modulated reflectance spectroscopy (PR, Photoreflectance). Traditional optical modulation reflectance spectroscopy can be used to measure the size of the bandgap of the semiconductors, built-in electric field and transition form, but we need to separate the individual wavelength terms from continuous wavelength for measurements in practice, has the disadvantage need to consume a lot of time. When we use optical fiber spectrometer to the amount of time metering modulation reflectance spectroscopy,we can effectively reduce the time of traditional optical modulation reflectance spectroscopy,because optical fiber spectrometer has the characteristic of observing the strength of multiple wavelength terms simultaneously,
This experiment is using optical fiber spectrometer to read the optical modulation reflectance spectroscopy of the gallium arsenide (GaAs), and then transforming the origin spectroscopy by fast Fourier transform (FFT) to find the changed curve of the reflectivity.

目錄
第一章 序論 1
第二章 半導體能帶理論 2
2.1 能帶理論 2
2.2 直接能隙和間接能隙 3
2.3 激子 4
2.4 空乏電場 4
第三章 調製光譜學與傅立葉分析 7
3.1 調製光譜學簡介 7
3.2調製光譜與介電函數關係 7
3.3電子躍遷性質 8
3.4利用電子躍遷性質導出介電函數 10
3.5調製光譜學-低電場調製 13
3.6傅立葉轉換 16
3.7傅立葉轉換之相位定義 20
第四章 實驗架構及樣品 23
4.1實驗儀器介紹 23
4.2實驗儀器架設 26
4.3傅立葉分析 28
4.4砷化鎵(GaAs)樣品簡介 28
4.5砷化鎵(GaAs)能帶結構 29
第五章 實驗結果 31
第六章 結論 43
參考資料 44
附錄 45

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