Responsive image
博碩士論文 etd-0617115-004624 詳細資訊
Title page for etd-0617115-004624
論文名稱
Title
利用三五族與矽異質整合之光模轉換器
Heterogeneous III-V/silicon integrated Spot Size Converter
系所名稱
Department
畢業學年期
Year, semester
語文別
Language
學位類別
Degree
頁數
Number of pages
84
研究生
Author
指導教授
Advisor
召集委員
Convenor
口試委員
Advisory Committee
口試日期
Date of Exam
2015-06-23
繳交日期
Date of Submission
2015-07-17
關鍵字
Keywords
光模轉換器、異質整合、底切、自我對準、共振耦合
Spot size converter, heterogeneous integration, undercut, self-aligned, resonant coupling method
統計
Statistics
本論文已被瀏覽 5698 次,被下載 100
The thesis/dissertation has been browsed 5698 times, has been downloaded 100 times.
中文摘要
高效率光模轉換器在積體光學中扮演重要的角色,因為可將不同光模態場型,以低損耗方式在不同模態的波導間轉換,使的層與層或不同的光電元件中,充分利用各個元件優點,相互連結。
本文主要是以新穎方式將三五族與矽使用異質整合結合後,再製作出共振耦合方式的漸變式光模轉換器,因共振耦合方式使得可在短距離內就可達到高的能量轉換,又由於漸變式寬度變寬,在轉換後,可隔離波導間偶合。首先,以稀釋DVS-BCB來當作膠材將三五族與矽結合在一起,再使用底切與自我對準技術分別將矽波導與三五族波導製做出來。由理論模擬在耦合長度100 μm以內就可以達到95%的耦合效率。我們成功的使用晶圓貼合的方式將高度0.22微米、寬度0.7微米的矽波導與寬度為次微米等級的漸變式錐形之三五族波導結合起來,並藉由量測不同長度的矽波導與三五族波導算出其耦合損耗、波導損耗與耦合效率,而其耦合效率高達80%。
Abstract
High-efficiency optical spot size converter (SSC) has become one of the major functional elements in photonics integration. Due to low-loss conversion, the optical fields of waveguide devices can be transferred either from layer to layer, or from device to device, enabling the integration of individual device function advantages and also their optical interconnection.
In this work, a new type of SSC has been proposed and demonstrated based on hybrid integration of III-V and Si material. Using tapered III-V waveguide integrated with Si waveguide, the optical field modes can be converted in a short distance through resonance condition. The mode field can also be locked after conversion due to the enlarged waveguide structure. During the processing, DVS-BCB was used as adhesive material to bond two wafers. Selective undercut etching with self-alignment technique was then performed to fabricated tapered waveguide structure of directional coupler. By numerical simulation, 95% of mode conversion can be attained between Silicon on insulator (SOI) waveguide and III-V waveguide. A single mode SOI with 0.7μm width and 0.22μm height has been successfully integrated with top tapered submicron III-V waveguide through wafer bonding technology. By comparing with different length of SOI and III-V waveguide, 80% conversion efficiency was found.
目次 Table of Contents
審定書 i
英文審定書 ii
中文摘要 iii
英文摘要 iv
目錄 v
圖次 viii
表次 xiii
第一章 諸論 1
1-1 前言 1
1-2 研究動機 2
1-3 異質整合與光模轉換器之技術 3
1-3-1 異質整合之技術 3
1-3-2 光模轉換器之種類 6
1-3-3 本論文製作之光模轉換器 9
1-4 研究步驟 9
1-5 論文架構 11
參考文獻 12
第二章 異質整合與共振型光模轉換器介紹 14
2-1 異質整合之光模轉換器 14
2-2 共振型光模轉換器種類及工作原理 18
2-2-1 共振型光模轉換器種類 18
2-2-2 共振型光模轉換器工作原理 21
參考文獻 24
第三章 光模轉換器模擬與分析 25
3-1 光波導耦合理論(Couple mode theory) 25
3-2 三五族材料折射率理論模型 28
3-3 光模轉換器設計 30
3-3-1 被動波導設計 30
3-3-2 主動波導設計 34
參考文獻 45
第四章 元件製程 46
4-1 磊晶層結構 47
4-2 晶圓貼合技術 47
4-3 波導蝕刻與製作 54
4-3-1 定義錐形波導 56
4-3-2 主動波導蝕刻 57
4-3-3 被動波導蝕刻 58
參考文獻 60
第五章 量測結果與討論 61
5-1 場行量測 62
5-1-1 遠場繞射角量測(Far field angle) 62
5-1-2 近場模態量測(Near field Optics) 64
5-2 耦合量測 66
5-2-1 耦合損耗量測(Coupling loss) 67
5-2-2 耦合效率量測(Coupling efficiency) 68
5-3 結果與討論 69
5-4 未來工作 69
參考文獻 References
[1] Cisco Visual Networking Index: Forecast and Methodology, 2013–2018
[2] COMPOUND SEMICONDUCTOR, III-Vs Shine At IEDM 2011, 8th March 2012
[3] G. Roelkens, Dries Van Thourhout, R. Baets, "Coupling schemes for heterogeneous integration of III-V membrane devices and silicon-on-insulator waveguides," J. Lightwave Technology, vol. 23, pp. 3827 – 3831, Nov. 2005.
[4] Liu Liu, Günther Roelkens, Joris Van Campenhout, Joost Brouckaert, Dries Van Thourhout, and Roel Baets, "III–V/Silicon-on-Insulator Nanophotonic Cavities for Optical Network-on-Chip , "Journal of Nanoscience and Nanotechnology Vol. 10, 1461–1472, 2010
[5] Gunther Roelkens, Joost Brouckaert, Dirk Taillaert, Pieter Dumon, Wim Bogaerts, Dries Van Thourhout, Roel Baets, "Integration of InP/InGaAsP photodetectors onto silicon-on-insulator waveguide circuits," Optics Express, vol. 13, pp. 10102–10108, 2005
[6] M. Lamponi, S. Keyvaninia, C. Jany, F. Poingt, F. Lelarge, G. de Valicourt, G. Roelkens, D. Van Thourhout, S. Messaoudene, J.-M. Fedeli, and G. H. Duan, "Low-Threshold Heterogeneously Integrated InP/SOI Lasers With a Double Adiabatic Taper Coupler," Ieee Photonics Technology Lett., vol. 24, pp. 76 – 78, Jan.1, 2012.
[7] Marko Galarza, Dries Van Thourhout, Roel Baets, and Manuel Lopez-Amo1, "Compact and highly-efficient polarization independent vertical resonant couplers for active-passive monolithic integration," Optics Express, vol. 16, pp. 8350–8358, 2008.
[8] CHARLES H. HENRY, L. F. JOHNSON, RALPH,” Determination of the Refractive Index of InGaAsP Epitaxial Layers by Mode Line Luminescence Spectroscom”, Ieee Journal Of Quantum Electronics, vol. QE-21, NO. 12, Dec. 1985.
[9] M Gudeny and J Piprek,“Material parameters of quaternary III–V semiconductors for multilayer mirrors at 1:55 _m wavelength”, Modelling Simul. Mater. Sci. Eng. 4, pp. 349–357, 1996.
[10] M. J. Mondry, D. I. Babic, J. E. Bowers, and L. A. Coldren, ’’Refractive Indexes of (Al, Ga, 1n)As Epilayers on InP for Optoelectronic Applications,” Ieee Photonics Technology Lett, vol. 4, NO. 6, Jun. 1992.
[11] S. Chakraborty a,*, D.G. Hasko a, R.J. Mears b, ” Aperiodic lattices in a high refractive index contrast system for photonic bandgap, ” engineering,UK Available online 19 March 2004.
[12] Chih-Hsiang Lin and J. M. Meese,” Optical properties of bulk AI,Ga,-,As”, Received 14 June 1993;.acceptedf or publication 3 August 1993.
[13] Martijn J. R. Heck , Jared F. Bauters, Michael L. Davenport, Jonathan K. Doylend, Siddharth Jain, G´eza Kurczveil , Sudharsanan Srinivasan , Yongbo Tang and John E. Bowers, " Hybrid Silicon Photonic Integrated Circuit Technology," IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, VOL. 19, NO. 4, JULY/AUGUST 2013
[14] Kazuya Ohira, Kentaro Kobayashi, Norio Iizuka, Haruhiko Yoshida, and Mizunori Ezaki, Hiroshi Uemura, Akihiro Kojima, Kenro Nakamura, Hideto Furuyama, and Hideki Shibata, “On-chip optical interconnection by using integrated III-V laser diode and photodetector with silicon waveguide,” OPTICS EXPRESS, Vol. 18, No. 15, 19 July 2010
[15] G. Roelkens, D. Van Thourhout, and R. Baets, “Laser emission and photodetection in an InP InGaAsP layer integrated on and coupled to a Silicon-on-Insulator waveguide circuit,” OPTICS EXPRESS, Vol. 14, No. 18, 4 September 2006
[16] G. Roelkens, L. Liu, J. Brouckaert, J. Van Campenhout, F. Van Laere, D. Van Thourhout, and R. Baets, “Wafer Bonding and Heterogeneous Integration: III-V/Silicon Photonics,” ECIO, June 11-13, 2008.
[17] Ingrid Moerman, Member, IEEE, Peter P. Van Daele, Member, IEEE,and Piet M. Demeester, Member, IEEE, “A Review on Fabrication Technologies for the Monolithic Integration of Tapers with III–V Semiconductor Devices,” IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, Vol. 3, No. 6, Dec. 1997.
[18] Lianping Hou, WeiWang, Hongliang Zhu, Fan Zhou, LufengWang and Jing Bian, “Monolithically integrated laser diode andelectroabsorption modulator with dual-waveguide spot-size converter input and output,” INSTITUTE OF PHYSICS PUBLISHING SEMICONDUCTOR SCIENCE AND TECHNOLOGY 2005
[19] Xia, John K. Thomson, Milind R. Gokhale, Pavel V. Studenkov, Jian Wei, Wilson Lin, and Stephen R. Forrest, “An Asymmetric Twin Waveguide High-Bandwidth Photodiode Using a Lateral Taper Coupler,” IEEE PHOTONICS TECHNOLOGY LETTERS, Vol. 13, NO. 8, Aug. 2001
[20] M. Guden and J. Piprek, "Material parameters of quaternary III - V semiconductors for multilayer mirrors at 1.55um wavelength," Modelling Simul. Mater. Sci. Eng, vol. 4, pp. 349–364, Apr.1996.
[21] D. W. Jenkins, "Optical properties of AlxGa1-xAs alloys," Physical Rev. B, vol. 39, pp. 12345–12352, Dec.1988.
[22] S. L. Chuang, Physics of optoelectronic devices. New York: Wiley, 1995.
[23] Milos Popovic, “Theory and design of high-index-contrast microphotonic circuits” Massachusetts Institute of Technology Thesis
[24] S. Keyvaninia, M. Muneeb, S. Stanković, P. J. Van Veldhoven, D. Van Thourhout, and G. Roelkens, "Ultra-thin DVS-BCB adhesive bonding of III-V wafers, dies and multiple dies to a patterned silicon-on-insulator substrate," Optical Materials Express, vol. 3, pp. 35–46, Jan. 1, 2013.
[25] G¨unther Roelkens, Liu Liu, Di Liang, Richard Jones, Alexander Fang, Brian Koch, and John Bowers , "III-V/silicon photonics for on-chip and intra-chip optical interconnects," Laser & Photonics Reviews, vol. 4, p. 751–779, Nov. 2010.
[26] S. Keyvaninia, M. Muneeb, S. Stanković, P. J. Van Veldhoven, D. Van Thourhout, and G. Roelkens, "Ultra-thin DVS-BCB adhesive bonding of III-V wafers, dies and multiple dies to a patterned silicon-on-insulator substrate", OPTICAL MATERIALS EXPRESS, Vol. 3, No. 1, Jan. 2013
電子全文 Fulltext
本電子全文僅授權使用者為學術研究之目的,進行個人非營利性質之檢索、閱讀、列印。請遵守中華民國著作權法之相關規定,切勿任意重製、散佈、改作、轉貼、播送,以免觸法。
論文使用權限 Thesis access permission:自定論文開放時間 user define
開放時間 Available:
校內 Campus: 已公開 available
校外 Off-campus: 已公開 available


紙本論文 Printed copies
紙本論文的公開資訊在102學年度以後相對較為完整。如果需要查詢101學年度以前的紙本論文公開資訊,請聯繫圖資處紙本論文服務櫃台。如有不便之處敬請見諒。
開放時間 available 已公開 available

QR Code