本碩士論文分為三個研究方向，分別探討多晶矽結晶法對元件效能的提升、
尺寸微縮對穿隧電晶體電性表現的影響、元件通道結晶法對可靠度研究。
在結晶法部分，金屬誘發橫向結晶使用金屬鎳為此研究的材料，相較於固相
結晶法有相近的關閉電流，有更高的導通電流及低的次臨界擺幅，此種優秀的電
性表現歸因於金屬誘發橫向結晶使通道有更大的晶粒尺寸，在電子通過通道時會
受到相較於固相結晶法更少的懸浮鍵與應力鍵影響。
穿隧電晶體元件導通原理與傳統電晶體截然不同，傳統電晶體的導通電流會
隨著通道縮減而提高，穿隧電晶體卻不是如此，因為穿隧電晶體的電流主要為能
帶曲折影響導通與否，故穿隧電晶體的短通道效應較不明顯。
可靠度在元件操作上扮演重要的角色，在受到外在環境溫度或施加電壓的影
響下，元件的電性有可能會改變。如果在受到影響後的元件電性有較小的變化，
代表元件的可靠度較高，較適合作長時間使用的元件。

There are three research directions in this thesis to discuss, respectively, including the
improvement of poly-silicon crystallization to the device performance, impact of scaling
down for conductivity of tunnel transistor, reliability of different channel
crystallizations of the device.
Using nickel to be a material of Metal Induced Lateral Crystallization (MILC) which
has similar off-state current, higher on-state current and better subthreshold slope (or
subthreshold swing) than Solid Phase Crystallization (SPC). These advantages of
electrical characteristic are attributed to MILC has bigger grain size that leads electrons
through the channel with less influenced by strain bond and dangling bond.
The transmission principle of tunnel transistor is totally different from conventional
transistor. The on-state current of conventional transistor increases with the channel
length decreases. However, the transmission principle of tunnel transistor is dominated
by band bending, so that it has less influenced in Short Channel Effect (SCE).
If the device has smaller changes after influenced by temperature and voltage, which
means it has higher reliability, it will be a suitable device for long-term use.

論文審定書 ....................................................................................................................... i
論文公開授權書 .............................................................................................................. ii
誌謝 ................................................................................................................................. iii
摘要 ................................................................................................................................. iv
Abstract ............................................................................................................................. v
圖 次 ........................................................................................................................... viii
第一章 緒論 .................................................................................................................. 1
1.1 研究動機 ......................................................................................................... 1
1.2 多晶矽電晶體(Poly Silicon Transistor) .......................................................... 2
1.2.1 傳統多晶矽電晶體 ...................................................................................... 2
1.2.2 穿隧電晶體(Tunnel Transistor) ................................................................... 3
1.3 結晶法(Crystallization)介紹 ........................................................................... 3
1.3.1 固相結晶法 .................................................................................................. 4
1.3.2 金屬誘發結晶法與金屬誘發橫向結晶法 .................................................. 4
1.4 晶粒邊界 ......................................................................................................... 5
1.4.1 晶粒的介紹與影響 ...................................................................................... 6
1.4.2 金屬誘發橫向結晶法之晶粒 ...................................................................... 7
1.5 穿隧原理 ......................................................................................................... 8
1.5.1 單晶矽穿隧電晶體 ...................................................................................... 8
1.5.2 多晶矽穿隧電晶體 ...................................................................................... 9
1.6 短通道效應 ..................................................................................................... 9
第二章 製程介紹 ........................................................................................................ 19
2.1 固相結晶法製程 ........................................................................................... 19
2.2 金屬誘發橫向結晶法 ................................................................................... 20
第三章 結果與討論 .................................................................................................... 26
3.1 電性分析 ....................................................................................................... 26
3.1.1 常態條件 .................................................................................................... 26
3.1.2 溫度效應 .................................................................................................... 27
3.2 可靠度分析 ................................................................................................... 28
3.2.1 75℃電壓效應 ............................................................................................ 28
3.2.2 125℃電壓效應 .......................................................................................... 28
3.3 結論 ............................................................................................................... 29
參考文獻 ........................................................................................................................ 40

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