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博碩士論文 etd-0618114-101614 詳細資訊
Title page for etd-0618114-101614
論文名稱
Title
以快速硒化法製備Cu2ZnSnSe4薄膜並用於太陽電池之製作
Preparation of Cu2ZnSnSe4 thin films by rapid thermal selenization for photovoltaic applications
系所名稱
Department
畢業學年期
Year, semester
語文別
Language
學位類別
Degree
頁數
Number of pages
73
研究生
Author
指導教授
Advisor
召集委員
Convenor
口試委員
Advisory Committee
口試日期
Date of Exam
2014-06-26
繳交日期
Date of Submission
2014-08-07
關鍵字
Keywords
硒化、薄膜太陽電池、銅鋅錫硒、元素前驅物疊層、快速加熱製程
thin film solar cell, elemental precursors, rapid thermal processing, selenization, Cu2ZnSnSe4
統計
Statistics
本論文已被瀏覽 5683 次,被下載 60
The thesis/dissertation has been browsed 5683 times, has been downloaded 60 times.
中文摘要
本研究採用快速加熱方式進行硒化製程,有別於一般硒化(selenization)製程反應時間約需30分鐘以上,快速硒化製程僅需約3分鐘(由室溫以每秒10度上升至500度,持溫兩分鐘)即可將前驅物反應成單一相CZTSe薄膜,是現階段製備該化合物薄膜最快速的硒化製程。
實驗上以XRD繞射、Raman光譜、穿透光譜等量測方法驗證快速硒化製程可達到成功合成單一相CZTSe薄膜的目標,單一相的薄膜其前驅物之元素比例設定區間為Zn/Sn=1.2,0.6≦Cu/(Zn+Sn)≦0.75,Se/(Cu+Zn+Sn)=1.2。CZTSe薄膜電阻率會隨著Cu/(Zn+Sn)下降而上升,其範圍在7-7000 Ω-cm之間。CZTSe薄膜結晶結構及表面形貌可藉由Sb的摻入來加以改善,前驅物的元素疊層順序以SLG/Sn/Sb/Zn/Cu/Se較佳,而Sb疊層厚度只需約10~15nm即可使CZTSe薄膜表面平整緻密、生長出具有柱狀晶結構的CZTSe薄膜,晶粒大小約750nm。實驗上所製作出的CZTSe薄膜能隙值約為1eV,具有高的光吸收係數(>104/cm)。現階段以快速硒化製程所製作的CZTSe薄膜太陽電池所測得的能量轉換效率(energy conversion efficiency)為0.62%。
Abstract
Single-phase Cu2ZnSnSe4 (CZTSe) films had been successfully prepared by rapid thermal selenization in this work. Unlike conventional selenization process that requires half an hour to complete the reaction, rapid thermal annealing process only takes 3 minutes (using a temperature ramp rate above 10oC/sec and kept at 500oC for 2 minutes).
Phase identification using X-ray diffraction, Raman spectroscopy, optical absorption spectroscopy indicated the films prepared with the preset composition of Zn/Sn=1.2, 0.6≦Cu/(Zn+Sn)≦0.75, Se/(Cu+Zn+Sn)=1.2 may achieve single-phase CZTSe films. The film resistivity depending on chemical composition can be controlled from 7 to 7000 Ω-cm.Grain structure of CZTSe had been further improved by incorporating a very thin layer of Sb (10-15 nm) in the precursor films. A typical CZTSe film had an average grain size of 750 nm and a bandgap of 1.0 eV. A preliminary result on energy conversion efficiency obtained from a solar cell using a CZTSe film as light absorption layer was 0.62%.
目次 Table of Contents
目錄
論文審定書…………………………………………………………………………….i
誌謝……………………………………………………………………………………ii
中文摘要……………………………………………………………………………...iii
Abstract……………………………………………………………………………….iv
第一章 導論…………………..……………………………………………………....1
1.1前言…………………………………………………………………………..1
1.2太陽電池原理………………………………………………………………..2
1.3 CZTSe的材料性質……………………………………...........................3
1.4 CZTSe硒化反應機制………………………………..............................9
1.5 CZTSe薄膜太陽電池發展現況…………………................................11
1.6研究動機與目的……………………………………………………………15
第二章 實驗流程與分析儀器介紹………………………………..………………..16
2.1 CZTSe薄膜製備與元件製作…………………………..…………………16
2.1.1基板準備工作(SLG/Mo)…………………………………………...….16
2.1.2 CZTSe主吸收層製備………………………………………………….17
2.1.3前驅物(precursor)製備…………………………………..……………18
2.1.4快速硒化製程(rapid thermal selenization)………….......….………19
2.1.5元件製作………………………………………........……..….………21
2.2分析方法與儀器介紹………………………………......…………………22
2.2.1 X光繞射分析儀(X-ray Diffraction)……..…….......…………...….…22
2.2.2顯微拉曼光譜儀(Micro-Raman Spectroscopy)……..….…...........22
2.2.3四點探針(Four-Point Probe)…………………………………..........23
2.2.4穿透光譜儀(Transmission Spectrophotometer)…………....……..24
2.2.5掃描式電子顯微鏡(SEM)……………………………………..……..24
2.2.6能量解析光譜儀(EDS)………………………………….…….…......24
2.2.7電子探針微區分析儀(EPMA)…………………………..…………...25
2.2.8 I-V量測與模擬光源……………………………….....……………...25
2.3實驗流程規劃………………………………………….....………………26
第三章 實驗結果與討論……………………..……………........………………..27
3.1以SLG/Zn/Sn/Cu/Se疊層順序製作CZTSe薄膜…….....………………27
3.2探討疊層順序對CZTSe薄膜的影響……………........…………………36
3.3以SLG/Sn/Zn/Cu/Se疊層順序製作CZTSe薄膜………...……………..39
3.4 CZTSe薄膜太陽電池製作……………………………....………………48
第四章 結論……………………………………………..…..............................53
參考文獻………………………..……………………….....………………..........55
附錄…………………………………………………….....………………………..60
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