本論文主要以電漿輔助分子束磊晶成長氮化錳鎵稀磁性半導體，包括單晶薄膜及一維奈米柱結構，並研究其物理特性。
首先研究以均勻摻雜及脈衝摻雜技術磊晶之氮化錳鎵薄膜。錳原子均勻摻雜高品質單晶氮化鎵薄膜配合低溫氮化鎵緩衝層成長於c面藍寶石基板，錳原子成功取代鎵原子在氮化鎵烏采結構中的位置。在磁阻實驗中，在10 K的環境溫度下得到5.5%的負磁阻，磁阻在升溫至50 K以上後驟降。在超導量子干涉儀(SQUID)變溫磁化率的量測中，估計材料的居禮溫度約為50 K。而脈衝摻雜技術成長之氮化錳鎵薄膜，利用高解析x光繞射(HRXRD)及穿透式電子顯微鏡(TEM)，分析材料的單晶結構。並藉由零場冷卻(ZFC)及場冷卻(FC)曲線及異常霍爾效應(AHE)，推測材料的居禮溫度約為190-200 K。
再來研究以均勻摻雜及脈衝摻雜技術磊晶之一維氮化錳鎵奈米柱。以均勻摻雜技術成長之氮化錳鎵奈米柱，透過拉曼(Raman)光譜及超導量子干涉儀實驗，錳原子極有可能以間隙缺陷或奈米尺寸的聚積存在於材料中。過多的錳原子會沈積於基板與奈米柱之間形成多晶薄膜。在脈衝摻雜氮化錳鎵奈米柱中，首先研究脈衝摻雜的週期，藉此壓制錳相關次要相的形成以及提高晶體品質，並證明氮化錳鎵奈米柱具有高於室溫鐵磁性。在磁各向異性的量測中，顯示磁矩校正不易沿著氮化鎵ｃ軸。而藉由成長過程中提高錳的流率，得到1.8%錳含量的氮化錳鎵奈米柱，其飽和磁化率幾乎為均勻摻雜奈米柱的四倍。

Plasma-assisted molecular beam epitaxy growth and characteristics of GaMnN diluted magnetic semiconductors, including epitaxial thin films and one-dimensional nanorods, are investigated in this dissertation.
Both homogeneously doped and delta-doped techniques are adopted to grow GaMnN thin films. Mn homogeneously doped high crystal quality GaN thin films were grown on c-sapphire with low-temperature GaN buffer layer. Mn atoms successfully substitute the Ga sites in wurtzite structure. GaMnN thin film exhibits 5.5% negative magnetoresistance (MR) at 10 K. The MR drastically drops above 50 K. The temperature dependence magnetization measured by superconducting quantum interference device (SQUID) is about 50 K Curie temperature of GaMnN. Furthermore, the crystallinity of delta-doped GaMnN thin film is verified by high-resolution x-ray diffraction (HRXRD) and transmission electron microscopy (TEM). The zero-field-cool (ZFC) and field-cool (FC) curves and anomalous Hall Effect (AHE) indicate the Curie temperature of the thin film sample is 190-200 K.
The GaMnN nanorods are also grown by PAMBE with homogeneously and delta-doping techniques. The Raman scattering and SQUID measurements indicate the interstitial or nano-sized clusters of Mn may form in homogeneously doped nanorods. Excessive Mn atoms form an amorphous layer between nanorods and substrate. The growth period of delta-doped nanorods is studied for minimizing the formation of Mn related secondary phases and thereby enhancing the crystal quality of the nanorods. Above room temperature ferromagnetism of GaMnN nanorods is observed in the delta-doped nanorods. The anisotropic magnetism of nanorods shows that preferred direction for the magnetic moment alignment is not along the c-axis of GaMnN. The saturated magnetization of delta-doped GaMnN with 1.8% Mn content, obtained by increasing Mn flux during growth, is enhanced almost four times larger than homogeneously doped sample.

論文審定書 i
Acknowledgement ii
摘要 iv
Abstract v
Contents vii
Chapter 1 Introduction 1
1.1 Background 1
1.2 Reviews of GaN based diluted magnetic semiconductors 4
1.3 Organization of the dissertation 10
Chapter 2 Epitaxial Growth and Characterization Techniques 17
2.1 Plasma-assisted molecular beam epitaxy 17
2.2 Electron microscopy 20
2.2.1 Scanning electron microscopy 20
2.2.2 Transmission electron microscopy 23
2.3 Chemical analysis 25
2.3.1 Energy dispersive x-ray spectrometer 25
2.3.2 X-ray photoelectron spectroscopy 26
2.4 X-ray diffraction 28
2.5 Raman spectroscopy 30
2.6 Superconducting quantum interference device 33
Chapter 3 Mn Doped GaN Thin Films Grown by Plasma-assisted Molecular Beam Epitaxy 35
3.1 Homogeneously doped GaMnN thin film 35
3.1.1 Growth procedure and structural properties of thin films 35
3.1.2 Magnetic properties of GaMnN thin film 39
3.2 Delta-doped GaMnN thin films 41
3.2.1 Growth procedure and structural properties of thin films 41
3.2.2 Magnetic properties of GaMnN thin films 46
Chapter 4 Mn Doped GaN Nanorods Grown by Plasma-assisted Molecular Beam Epitaxy 55
4.1 Homogeneously doped GaMnN nanorods 55
4.1.1 Growth procedure and morphology of nanorods 55
4.1.2 Analysis of Mn component of nanorods 58
4.1.3 Structural properties of nanorods 61
4.1.4 Magnetic properties of nanorods 64
4.2 Delta-doped GaMnN naorods with varied growth period of GaN in a pair 65
4.2.1 Growth procedure and morphology of nanorods 65
4.2.2 Structural properties of nanorods 67
4.2.3 Optical properties of nanorods 73
4.2.4 Magnetic properties of nanorods 77
4.3 Delta-doped GaMnN nanorods with varied Mn flux 79
4.3.1 Growth procedure and morphology of nanorods 79
4.3.2 Structural properties of nanorods 81
4.3.3 Magnetic properties of nanorods 83
Chapter 5 Conclusion 89

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Chapter 4
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