摘要

微結構的研究與以射頻磁控式濺鍍法成長之鉻薄膜和鎳鉻薄膜的抗腐蝕能力是本文的研究目的。我們在玻璃上使用不同的射頻功率來成長鉻薄膜。再用光微影術和濕蝕刻在薄膜上定義出乾蝕刻的區間，接著再將薄膜置於真空環境下回火。我們用來濺鍍的鉻靶材與鎳鉻合金靶材是市面上可以買到的商品，其純度分別為99.99%與99.95%。我們用了兩種不一樣的鎳鉻合金靶材，在兩種靶材中鎳的含量分別為40%和80%。我們將已經成長薄膜的試片用反應性離子蝕刻的方法並以SF6與O2為蝕刻氣體來測試薄膜的抗腐蝕能力。藉由低瓦數來成長薄膜，我們可以得到絕佳的表面型態與抗腐蝕能力。這是因為相較於高瓦數所成長的薄膜來說，藉由低瓦數所成長的薄膜會有較低的應力與較少的缺陷。
在20W低瓦數之下成長，鉻薄膜與鎳鎘薄膜的蝕刻速率可以降低到120 Å/min與50Å/min。我們也將討論在不同溫度下回火所造成的影響。

Abstract

The objectives of this thesis are to investigate the microstructures and the corrosion resistance of chromium (Cr) and nichrome (Ni-Cr) thin films deposited by rf magnetron sputtering. Different rf powers were used to prepare the Cr thin films on glass substrates. The thin films were then patterned and subsequently annealed in vacuum environment. The targets used for the sputtering are commercially available Cr and nichrome with 4N and 99.95% purity, respectively. Two different nichrome targets were used. The composition of Ni in nichrome are 40 and 80%. The sputtered samples were etched by reactive ion etching in a mixture of SF6 and O2 for testing the corrosion resistance of the deposited films. The thin films with excellent surface morphology and corrosion resistance can be obtained by preparing the films at a low rf power. This is because the films had lower stress and less defects than the films prepared by high rf powers.
At a low power of 20W, the etching rates as low as 120Å/min and 50 Å/min for Cr and nichrome were achieved. The annealing effect of the deposited films at different temperature are also discussed.

目錄

第一章 介紹 1

第二章 保護材料的成長與特性 5
第一節 保護材料的成長與回火 5
第二節 保護材料微結構的探討 8
第三節 結論 16

第三章 製程流程 17
第一節 製程流程 17
第二節 保護材料的濕蝕刻 22
第三節 保護層的乾蝕刻與乾蝕刻速率 27
第四節 結論與深蝕刻成果 32

第四章 結論 36

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