論文使用權限 Thesis access permission:校內外都一年後公開 withheld
開放時間 Available:
校內 Campus: 已公開 available
校外 Off-campus: 已公開 available
論文名稱 Title |
以柴式提拉法生長(La,Sr)(Al,Ta)O3單晶晶體與其特性之量測 Study on the Czochralski Growth and characterization of (La,Sr)(Al,Ta)O3 single crystals |
||
系所名稱 Department |
|||
畢業學年期 Year, semester |
語文別 Language |
||
學位類別 Degree |
頁數 Number of pages |
57 |
|
研究生 Author |
|||
指導教授 Advisor |
|||
召集委員 Convenor |
|||
口試委員 Advisory Committee |
|||
口試日期 Date of Exam |
2006-06-01 |
繳交日期 Date of Submission |
2006-06-20 |
關鍵字 Keywords |
柴式提拉法、單晶生長 Sr)(Al, (La, Ta)O3 |
||
統計 Statistics |
本論文已被瀏覽 5687 次,被下載 2153 次 The thesis/dissertation has been browsed 5687 times, has been downloaded 2153 times. |
中文摘要 |
本文利用傳統的柴氏提拉法,以不同的轉速和拉速提拉兩根(La,Sr)(Al,Ta) O3晶體,主要的目的是為了找出(La,Sr)(Al,Ta) O3晶體最佳的生長條件。第一根晶體從錐頂到底部長約8.5公分,呈現著不對稱的形狀,在晶體生長的過程中,晶體的結晶速率相當的緩慢,造成的因素為晶體的熱傳導係數很低,使得溫度梯度過小造成晶體的結晶速率緩慢。第二次晶體實驗中,藉著改變熱場的配置,生長出的晶體明顯獲得改善,但是在剩料中卻殘留一部分的藍色結晶,此結晶與之前剩料的顏色有明顯的不同,藉X-ray和ICP-MS光譜去分析藍色晶塊成份及形成的原因。另外本研究亦量測(La,Sr)(Al,Ta) O3晶體的物理性質,並且由偏光顯微鏡還有高角度X-ray光譜分析,發現了晶體中存在著另一種結構。 |
Abstract |
In this work, two (La,Sr)(Al,Ta) O3 single crystals were grown by the conventional Czochralski pulling method by using different rotation rates and pull rates to find out the optimal growth conditions. The total length of the first (La,Sr)(Al,Ta) O3 crystal is about 8.5cm, and the shape is not symmetrical. The small thermal conductivity of the crystal would lead to small temperature gradient, so the growth rate was slow. The shape of the second crystal was improved by adjusting the thermal field. But, the bottom of the residual has blue color. The blue residual was analysed by x-ray and Inductively Coupled Plasma Mass Spectrometry (ICP-MS). Besides, the crystal structure was analyzed and the second phase had been found in crystals by high angle x-ray spectrum and polarizer microscope. |
目次 Table of Contents |
目 錄 1.前言 1 2.文獻回顧 3 2-1白光二極體簡介 3 2-2氮化鎵的結構與特性回顧 6 2-3 (La,Sr)(Al,Ta) O3歷史回顧 9 3. (La,Sr)(Al,Ta) O3單晶生長 14 3-1多晶(La,Sr)(Al,Ta) O3製備 14 3-2(La,Sr)(Al,Ta) O3單晶生長 17 4.結果與討論 21 4-1第一根(La,Sr)(Al,Ta) O3單晶生長實驗 21 4-1-1 晶體形狀………………………………………………..23 4-1-2晶體顏色…………………………………………….…..23 4-1-3 參數修正……………………………………………….25 4-2第二次(La,Sr)(Al,Ta) O3單晶生長實驗………………………28 4-2-1 晶體形狀………………………………………………..29 4-2-2 晶體顏色…………………………………………….....29 4-2-3 X-ray diffraction 分析……………………………..…32 4-2-4感應耦合電漿質譜分析儀 (ICP-MS)……………….…36 4-3 (La,Sr)(Al,Ta) O3單晶特性量測……………………………...38 4-3-1 Rocking curve 光譜之量測………………………….....38 4-3-2 高角度x-ray與偏光顯微鏡之量測……..…………….39 4-3-3 穿透式電子顯微鏡(transmission electron microscopy, TEM)觀察之結果……………………………………………..42 4-3-4穿透率光譜的量測………………………………....…...45 5.結論…………………………………………………………………...46 |
參考文獻 References |
[1]Arpad A. Bergh, phys.stat.sol. (a)201, No. 12, (2004) 2740-2754 [2]Shuji Nakamura, Takashi Mukai, and Masayuki Senoh, Appl. Phys. Lett.64, (1994)1687 [3]T. Lukasiewicz, M. Swirkowicz, H. Sakowska, A. Turos, M. Leszczynski, R. Ratajczak, J. Cryst. Growth 237-239, (2002)1118-1123 [4]D. Mateika, H. Kohler, H. Laudan and E. Volkel, Journal of Crystal Growth 109 (1991) 447-456 [5]D.J. Tao, H.X. Wu, X.D. Xu, R.S. Yan, F.Y. Liu, A.P.B. Sinha X.P. Jiang, H.L. Hu, Optical Materials 23(2003) 425-428 [6]W. Wierzchowski, K.Wieteska, W. Graeff, H. Sakowska, T. Lukasiewicz, Cryst. Res. Technol. 40, (2002) 517-522 [7]S.O. Kasap, Principles of Electronic Materials and Devices, Mc Graw Hill, p481 [8]http://www.wavicle.biz/led_history.html [9] S.O. Kasap, Principles of Electronic Materials and Devices, Mc Graw Hill, p483 [10]L. Liu, J.H. Edgar, Materials Science and Engineering R 37(2002) 61-127 [11]E. S. Hellman, J. Nitride Semicond. Res. 3.11 (1998) [12]J. W. Lee, S. W. Park, J. B.Yoo, phys. Stat. sol.(a) 176,(1999)583 [13]S. T. Kim, Y. J. Lee, D. C. Moon, T. K. Yoo, J. Cryst. Growth 194 (1998) 37-42 [14]V. Wagner, O. Parillaud, H. J. Buhlmann, M. Ilegems, phys. Stat. sol. (a) 176 (1999) 429 [15]G. Nataf, B. Beaumont, A. Bouille, S. Haffouz, M. Vaille, J. Cryst. Growth 192, (1998)73 [16]Mark Fox, “Optical Properties of Solids”, Oxford university press,(2001) p105 [17]H.Morkoc, “Nitride Semiconductors Devices” ,Springer, (1999) p44 [18]S.C. Tidrow, A. Tauber, W.D. Wilber, R. T. Lareau, IEEE Transactions on Applied Superconductivity, Vol. 7 No2, June 1997 [19]H. Sakowska, M. Swirkowicz, K. Mazur, T. Lukasiewicz, A. Witek, Cryst. Res. Technol.36(2001) 851-858 [20]M. Ito, K. Shimamura, D. A. Pawlak, T. Fukuda, J. Cryst. Growth 235 (2002) 277-282 [21]H. Li, L. Salamanca-Riba, R. Ramesh, J. Mater. Res., Vol. 18, No. 7, (2003) 1698-1704 [22]E. Talik, M. Kruczek, H. Sakowska, W. Szyrski, J. Alloys. Comop. 361 (2003) 282-288 [23]Homer Fay, C. D. Brandle, J. Appl. Phys. 38,3405(1967) [24]S. Geller and P.M. Raccah, Phys. Rev. B2, 1167(1970) [25]S. Bueble, K. Knorr, E. Brecht, W. W. Schmahl, Suface Science 400 (1998) 345-355 [26]K. Shimamura, H. Tabata, H. Takeda, V. V. Kochurikhin, T. Fukuda, Journal of Crystal Growth 194 (1998) 209-213 [27]M. Berkowski, J. F. Finowicki, R. Diduszko, P. Byszewski, R. Aleksiyko, R. K. Domukhovska, J. Cryst. Growth ,257 (2003) 146-152 |
電子全文 Fulltext |
本電子全文僅授權使用者為學術研究之目的,進行個人非營利性質之檢索、閱讀、列印。請遵守中華民國著作權法之相關規定,切勿任意重製、散佈、改作、轉貼、播送,以免觸法。 論文使用權限 Thesis access permission:校內外都一年後公開 withheld 開放時間 Available: 校內 Campus: 已公開 available 校外 Off-campus: 已公開 available |
紙本論文 Printed copies |
紙本論文的公開資訊在102學年度以後相對較為完整。如果需要查詢101學年度以前的紙本論文公開資訊,請聯繫圖資處紙本論文服務櫃台。如有不便之處敬請見諒。 開放時間 available 已公開 available |
QR Code |