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博碩士論文 etd-0620106-142052 詳細資訊
Title page for etd-0620106-142052
論文名稱
Title
1.氮化鎵/氮化鋁薄膜在矽和鋁酸鋰基板上的缺陷分析 2.藍寶石單晶成長
1.Defect analysis of GaN /AlN thin films on Si and LiAlO2 substrates 2.Growth of Sapphire single crystal
系所名稱
Department
畢業學年期
Year, semester
語文別
Language
學位類別
Degree
頁數
Number of pages
61
研究生
Author
指導教授
Advisor
召集委員
Convenor
口試委員
Advisory Committee
口試日期
Date of Exam
2006-06-01
繳交日期
Date of Submission
2006-06-20
關鍵字
Keywords
氮化鎵、氮化鋁、藍寶石
GaN, Sapphire, AlN
統計
Statistics
本論文已被瀏覽 5678 次,被下載 9175
The thesis/dissertation has been browsed 5678 times, has been downloaded 9175 times.
中文摘要
本文主要研究氮化鎵(GaN)/氮化鋁(AlN)在矽(Si)和鋁酸鋰(LiAlO2,LAO)基板上的缺陷分析及藍寶石單晶生長。我們發現在不同的鋁沈積時間(Al-predeposition time),對AlN/Si上的缺陷有很大的影響,而AlN的疊差能(stacking fault energy)很高,因此無法從中觀察到部分差排的存在。在冷卻過程中,如果熱膨脹係數差異大,容易因收縮速率的不同而有內應力,內應力過大會導致裂縫的產生。GaN磊晶在LiAlO2上也有上述的情況,可由電子顯微鏡來分析:缺陷,差排的卜格向量(Burgers vector)。
利用柴式提拉法,使用a軸的籽晶去拉藍寶石單晶時,在不同的轉速下可發現轉速越快,晶體內就會有越多的氣泡和空孔存在。使用c軸的籽晶拉出的藍寶石單晶,使用每小時4.5公釐的拉速,拉出的晶體在冷卻拿出來後,發現到有沿著c軸的裂縫貫穿整個晶體,而4.0公釐的拉速則可以拉出沒有裂縫的晶體。
Abstract
The main purpose of this study is focused on the defects within the layers of GaN over AlN thin films which were grown on the substrates of silicon (111) and LiAlO2 (100), respectively. The growth of three sapphire crystals is also addressed. During the epitaxial growth period, the Al pre-deposition time is very important for the defect on AlN/Si, and due to the high stacking fault energy, the partial dislocations in the AlN layers can not be observed. Cracks were found in the GaN films because of the great thermal mismatch between GaN itself and AlN which is up to 25%. Although the lattice mismatch between GaN and LiAlO2 is low, the thermal stress effect still could not be avoided. Cracks also occurred in the GaN films which were grown on LiAlO2 substrates.
For the sapphire pulled along [100] direction, the crystal has fewer amounts of bubbles at the lower rotation rate. For the sapphire pulled along [001] direction, the crystal with 4.5 mm/hr pulling rate has cracks along [001] direction, but the crystal with 4.0 mm/hr pulling rate has no cracks inside.
目次 Table of Contents
目 錄
摘 要 I
ABSTRACT II
目 錄 III
表 目 錄 IV
圖 目 錄 V
1.前言 1
2.文獻回顧 3
2.1 發光二極體簡介 3
2.2 鋁酸鋰基板簡介 6
2.3 有機金屬化學氣相沈積法簡述 9
2.4 基板和氮化鎵之間不匹配數的關係 11
2.6 藍寶石簡介 18
2.7 柴式提拉法介紹 19
3.氮化鎵/氮化鋁薄膜在矽和鋁酸鋰基板上的缺陷 22
3.1 試片的結構 22
3.2 X-RAY繞射儀分析 23
3.3 掃瞄式電子顯微鏡分析 26
3.4 穿透式電子顯微鏡分析 34
4.藍寶石單晶成長 42
4.1 熱場的結構 42
4.2 長晶的過程 43
4.3 晶體的分析 45
5.結論 50
參考文獻 51
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