在構裝的技術中，BGA鍚球的封裝方式是目前產業界所喜愛的封裝方式之一，且無鉛焊料是目前電子業之發展趨勢，所以本實驗為研究Sn-Ag-Cu系列之鍚球焊料在鍍有Au/Ni/Cu之BGA基板上迴焊、時效後之IMC成長行為及接點可靠度。
本研究選擇含磷SAC305、含磷SAC405與無磷SAC405鍚球焊料，實驗結果顯示，含磷SAC305鍚球在175°C時效下，在界面生成(Cu,Ni,Au)6Sn5，而在靠近Ni層有(Ni,P) IMC生成；含磷SAC405鍚球在150°C時效下，界面生成之IMC生長緩慢，但通入電流後，除了原先形成之(Cu,Ni,Au)6Sn5外，在其下方發現有(Ni,Cu)3Sn4之生成，且起初在Ni層上之(Ni,P) IMC，逐漸進入(Cu,Ni,Au)6Sn5內；無磷SAC405鍚球在150°C時效下，界面之IMC也生長緩慢，但在通入電流後，也有(Cu,Ni,Au)6Sn5與(Ni,Cu)3Sn4生成。
在通電流的試片中，發現正負極IMC的種類相同，且厚度無顯著差異，但IMC卻成長迅速，在測量通電流的鍚球溫度後，發現溫度上升至193°C，因此，IMC的成長迅速是電流產生焦耳熱效應所導致，並無發現電遷移效應。
本實驗所使用之鍚球，時效後在鍚球內均發現有白色小島狀AuSn4與島狀Ag3Sn生成；特別在無磷SAC405鍚球內發現有板狀Ag3Sn生成。
在無通電流的情況下，Sn-Ag-Cu系列鍚球在推球測試後，破裂面都是發生在Bulk Solder部位之Ductile Mode的破裂行為，使得Ball Shear值保持一定強度，具有良好的可靠度。

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壹、前言 1
1-1、研究背景 1
1-2、研究動機 2

貳、理論與文獻回顧 2
2-1、潤濕性質 2
2-2、金屬間之界面反應 3
2-3、電遷移效應 6
2-4、介金屬成長動力學 7
2-5、推球之破裂型態 9

參、實驗方法 10
3-1、實驗目的 10
3-2、試片準備 10
3-2-1、BGA（Ball-Grid Array）試片製作與分類 10
3-2-2、錫球與Pad之接合部位 11
3-2-3、鍚球與Pad之接合條件 12
3-2-4、通電流BGA試片之製作 12
3-3、儀器準備 13
3-4、實驗步驟 13
3-4-1、試片處理流程 13
3-4-2、試片Cross Section 部位之金相處理 14
3-4-3、推球過程 15
3-5、試片分析 16

肆、實驗結果 17
4-1、175°C/Sn-3Ag-0.5Cu-P鍚球接點之界面反應 17
4-1-1、鍚球接合部位之IMC成長行為 17
4-1-2、鍚球內析出之IMC 17
4-1-3、各成分之擴散行為 18
4-2、150°C/Sn-4Ag-0.5Cu-P鍚球接點之界面反應 18
4-2-1、通電流 18
4-2-1-A、鍚球接合部位之IMC成長行為 18
4-2-1-B、鍚球內析出之IMC 19
4-2-1-C、各成分之擴散行為 20
4-2-2、未通電流 20
4-2-2-A、鍚球內與接合部位之IMC成長行為 20
4-3、150°C/Sn-4Ag-0.5Cu鍚球接點之界面反應 21
4-3-1、通電流 21
4-3-1-A、鍚球接合部位之IMC成長行為 21
4-3-1-B、鍚球內析出之IMC 21
4-3-1-C、各成分之擴散行為 22
4-3-2、未通電流 22
4-3-2-A、鍚球內與接合部位之IMC成長行為 22
4-4、85°C/85RH/Sn-4Ag-0.5Cu鍚球接點之界面反應 23
4-5、推球強度分析 23

伍、討論 24
5-1、175°C/Sn-3Ag-0.5Cu-P鍚球接點之界面反應 24
5-1-1、接合部位之IMC成長行為 24
5-1-2、鍚球內P的擴散行為 24
5-2、150°C通電流/Sn-4Ag-0.5Cu-P鍚球接點之界面反應 25
5-2-1、鍚球接合部位之IMC成長行為 25
5-2-2、鍚球接合部位之相平衡與擴散路徑 26
5-3、150°C通電流/Sn-4Ag-0.5Cu鍚球接點之界面反應 26
5-3-1、鍚球接合部位之IMC成長行為 26
5-3-2、鍚球接合部位之相平衡與擴散路徑 27
5-4、電流對鍚球接點的影響 27
5-4-1、IMC的成長 27
5-4-2、電遷移效應 28
5-5、含磷SAC405與無磷SAC405比較 29
5-6、鍚球內之AuSn4 30

陸、結論 31

柒、參考文獻 33

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