在本文中，以量子井熱混合擴散方式-內部晶格缺位擴散，來調整材料量子井能隙以達到光積體電路整合的最佳化，並以整合電致吸收調變器與半導體光放大器為研究。且藉由該擴散機制，可區域性調整材料能隙，使單一晶片中電致吸收調變器操作波長往短波長移動，又稱之為藍位移。而半導體光放大器仍維持材料操作波長，如此一來電致吸收調變器會因為量子侷限史塔克效應可以與半導體光放大器的操作波長匹配，使整體的效率提高。
在製程中，利用二氧化矽當作介電質材料，來加強內部晶格缺位擴散，此材料在快速熱退火時會在晶片表面產生應力。藉由Ga擴散到二氧化矽中使得應力獲得釋放，同時也在材料中產生空缺，來優化量子井熱混合製程，由此可知二氧化矽薄膜可以區域型的調整能隙。在本製程中，以GaAs材料來當作在快速熱退火處理時的覆蓋層，在高溫熱處理下可抑制晶片表面的As元素揮發，且量子井熱混合時所需的溫度要求較低，而且可以減少晶片結構內部元素的擴散，如Zn。將此方法應用在1.3cm*1.3cm面積大的晶片上，此晶片擁有多重量子井結構，並且是由InGaAsP組成，將此晶片製作電致吸收光調變器與半導體光放大器，藉由以650οC高溫熱處理一分鐘，可以在40μm×200μm的尺度內調整波長至40nm。比較有經過熱混合處理的電致吸收調變器以及沒有經過熱混合處理的電致吸收調變器，發現他們有相同的消光比，這表示在晶片結構裡所摻雜的原子濃度是只有少部分擴散的。最後，由量測半導體光放大器可得知其增益量達到20dB，由此可以證實整合式元件是非常有應用的潛力以及有重複性的製程。

In this dissertation, a quantum well intermixing (QWI) technology, called as impurity free vacancy diffusion (IFVD), is used to perform the bandgap engineering of material in order to improve monolithic photonic integration performance. Monolithic integration of SOA and EAM is taken as test devices. By IFVD with patterned area, the regional bandgap of EAM area has blue shift in transition energy level, while SOA area remains the same. So that, quantum confined Stark effect in EAM can have matched wavelength with SOA area, enhancing the overall efficiency.
In the processing, SiO2 film is deposited on top of the sample for controlling the
IFVD. Through diffusion of Ga atom into SiO2 film for releasing stress of wafer
during high temperature rapid thermal annealing, the vacancies simultaneously are
created in material, enhancing QWI processing. Thus, locally pattering SiO2 film can
induce the lateral bandgap engineering. In this processing, GaAs material is used as
cap layer to reduce As desorption during annealing, allowing QWI processing as in
lower temperature regime and thus reducing the parasitic diffusion processing, for
example Zn. 1.3cm×1.3cm wafer with InGaAsP MQW is used as sample to integrate
SOA and EAM. The 650oC annealing temperature with one minute time has induced
40nm wavelength difference along 40μm×200μm area. EAM with QWI has been to
found to have the same extinction ratio in comparison to the one without QWI,
suggesting low parasitic atom diffusion. Also, gain of 20 dB in SOA is also observed,
showing the potential application of monolithic integration with regrowth free processing.

中文審定書 ………………………………………………………….. ⅰ
英文審定書 ………………………………………………………….. ⅱ
誌謝 ………………………………………………………………….. ⅲ
中文摘要 ..………………………………………………………..….. ⅳ
英文摘要 …………………………………………………………..… ⅴ
目錄 ………………………………………………………………….. ⅵ
圖次 ………………………………………………………………….. ⅶ
第一章 簡介 ………………....................................................... 1
1.1 前言 ......................................................................... 1
1.2 研究動機(EAM-SOA) ….............................................. 1
1.3 量子井材料能隙工程 .................................................. 4
1.4 先前工作 ................................................................... 9
1.5 主要工作 .................................................................. 14
第二章 理論與程式模擬 …………………………………………...... 16
2.1 熱混合擴散機制 ……………………………………........... 16
2.2 電致光吸收調變器與光放大器 ……………………........... 19
2.2.1 光吸收定理 …………………………………….....……... 19
2.2.2 光放大定理 …………………………………….....……... 22
2.3 量子侷限史塔克效應 …………………………….....…...... 23
2.4 計算熱混合擴散量子井 …………………………....…...... 25
2.5 熱混合擴散效應下能帶結構的改變 ……………......……. 26
2.6 量子井波函數與基態的計算 ……………………......……. 29
第三章 材料分析 ……………………………………………..……… 32
3.1 先前工作 ………………………………………….....……. 32
3.2 二次離子質譜儀分析 …………………………….…....…. 35
3.3 優化熱退火製程 ……………………………….…....……. 45
3.4 改變試片內部結構 ……………………………….....……. 47
第四章 熱混合擴散與整合元件方法與製作 ……………….……… 50
4.1 熱混合擴散製程 ………………………………….…....…. 50
4.2 整合元件製程 ………………………………….……....…. 55
4.2.1 蒸鍍P型金屬與蒸鍍對準記號 …………….....……….. 55
4.2.2 P型反向式梁脊波導蝕刻 ……………….……...……… 57
4.2.3 離子佈值 ………………………………….……...…….. 59
4.2.4 蝕刻N型接觸層、蒸鍍N型金屬與定義絕緣層 .…....... 60
4.2.5 平坦化製程 ……………………….………………..…... 65
4.2.6 蒸鍍共平面電極 ………………….………………...….. 69
4.2.7 半絕緣基板研磨 ……………….…………………...….. 71
第五章 元件特性量測 ……………………….……………………… 72
5.1 EAMSOA整合元件電流對電壓分析 ……………......….. 72
5.2 EAMSOA整合元件電激發光 ………………………...…. 72
5.3 EAMSOA整合元件光電流頻譜 ……………………….... 74
5.4 EAMSOA整合元件偏壓相依穿透率 ………………...…. 76
第六章 結論 …………………………………………………...……. 78
參考文獻 ...………………………………………………….....….... 79

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