以同構反應式磁控濺鍍系統在溫度低於80ºC下在加有負偏壓的矽基板及玻璃基板上成長氧化鋁薄膜。靶材-基板距離17公分。對不同基板偏壓成長之氮化鋁薄膜微結構及表面形態進行研究。當基板所加的偏壓為零伏特時所生成的氮化鋁薄膜為非晶系薄膜。而當基板所加的偏壓介於負180伏特和負210伏特時所生成的氮化鋁薄膜具有所要的(002)晶格排向。在偏壓為負210伏特時有最大的結晶顆粒，量得的顆粒直徑是80奈米。基板所加的偏壓介於負240伏特和負270伏特時所生成的薄膜可觀察到晶格排向除了(002)之外還包含了(100)。而基板偏壓加至負320伏特時(002)晶格排向消失了。此外，長的靶材-基板距離所生成的薄膜可觀察到鏡面反射。在偏壓為負210伏特時最大的表面粗糙度是47.2 ±5.0 奈米。
對磁控濺鍍系統成長之氮化鋁薄膜硬度及微結構於室溫進行研究。研究發現氮化鋁薄膜硬度及微結構與負偏壓的變化具有高度的相關性。而當基板所加的偏壓負210伏特時，多晶氮化鋁薄膜最大的硬度是17.5 GPa。在相同偏壓條件下，水滴接觸角大於90度，顯示此氮化鋁薄膜表面具有疏水性。此外，還探討分別以氮化鋁靶與鋁靶在400℃反應式磁控濺鍍所成長之具有(002)晶格排向氮化鋁薄膜之硬度，且也與長距離磁控濺鍍系統成長之氮化鋁薄膜硬度做比較與探討。

Polycrystalline AlN thin films were reactively deposited onto Al layers on negatively biased glass and Si substrates at temperatures < 80 oC by coherent magnetron sputtering. The target-to-substrate distance is 17 cm. The microstructures and morphology of the films grown at different bias voltages on the substrates were investigated. Typical thickness of the deposited film is 600 nm. The films were amorphous when no bias was applied to the substrates. Diffraction peak of AlN (002) direction was observed at bias voltages of -180 and -210 V. At a bias voltage of -210 V, the (002) granular crystal with the maximum diameter of 80 nm was obtained. In addition to the AlN (002) direction, AlN (100) direction was observed when the bias voltage was increased to -240 and -270 V. The peak of (002) plane vanished at a bias voltage of -320 V. Moreover, the deposited AlN films have specular reflectance owning to the large target-to-substrate distance. The maximum roughness of the films was 47.2±5.0 nm at a bias voltage of -210 V.
The hardness and microstructure of aluminum nitride (AlN) thin films prepared by long-distance magnetron sputtering at room temperature has been investigated. The hardness and microstructure of the films were found to vary greatly with different substrate biases. At a bias voltage of –210 V, the (002) polycrystalline AlN with the maximum hardness of 17.5 GPa was observed. The water droplet contact angle under this bias condition is larger than 90° indicating that hydrophobicity can be obtained at the film surface. In addition, hardness of (002) AlN films prepared by sputtering of AlN target at room temperature and by reactive sputtering of Al target at 400°C were discussed and compared with that of AlN films prepared by long-distance reactive sputtering.

Chapter 1 Introduction……………………………………………………1
1-1 Introduction……………………………………………..1
1-2 Dissertation overview…………………………………2
1-3References…………………………………………………5
Chapter 2 The Coherent Magnetron Sputtering System….7
2-1 Introduction………………………………………………7
2-2 Deposition methods……………………………………..…8
2-3 Conclusions…………………………………………….…22
2-4 References………………………………………………...37

Chapter 3 AlN Growth and Characterizations……………39
3-1 Introduction………………………………………………39
3-2 Experiment…………………………………………………40
3-3 Results and discussions………………………………42
3-4 Fabrication of the SAW devices………………………44
3-5 Conclusions…………………………………………………45
3-6 References…………………………………………………56

Chapter 4 Mechanical Properties of AlN Thin Films……58
4-1 Introduction………………………………………….……58
4-2 Experiment……………………………………………..……59
4-3 Results and discussions………………………….…….60
4-4 Conclusions………………………………………….64
4-5 References……………………………………………...71

Chapter 5 Conclusions…………………………………………………..73

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