本論文提出利用ITO 薄膜退火的方式製作ITO/Si 異質接面的太陽能電池。本元件是用RF磁式濺鍍法在室溫下成長ITO薄膜。
ITO在室溫下成長出來的薄膜片電阻（sheet resistance）為35 Ω/□，而且呈現非晶結構。經由300 ℃ 20分鐘的回火後，阻值可以降到9.7 Ω/□，經由XRD的分析，結晶方向在（222）與（400）較為明顯。此外，載子濃度從3×1020cm-3上升到9×1020 cm-3，退火後在可見光的平均穿透率約為82%。
此異質接面二極體的理想因子為1.93。我們認為ITO/Si太陽能電池的性能會因為過大的串聯電阻與載子在接面的複合而受影響。

ITO/Si heterojunction solar cells fabricated by post annealing of ITO films were presented. The cells were obtained by first depositing ITO films at room temperature by rf magnetron sputter technique. The as-deposited film is amorphous and its sheet as low as 35 Ω/□ was obtained. The sheet resistance by post annealing the sample in vacuum at 300℃ 20min. reduced to 9.7 Ω/□. The diffraction peaks on (222) and (400) directions were observed by XRD analysis. In addition, the carrier concentration is increased from 3×1020 cm-3 to 9×1020cm-3. The average transmittance is 82% after annealing.
The ideality factor of the heterojunction diode is 1.93. We believed that the performance of the ITO/Si cells is limited due to large series resistance and carrier recombination at interface.

第一章 導論 1
第二章 ITO薄膜與太陽能電池元件 4
2-1太陽能電池理論 4
2-2材料與儀器介紹 7
2-2-1 Si基板 7
2-2-2 靶材 7
2-2-3 濺鍍機示意圖 7
2-2-4 量測儀器介紹 8
2-2-4.1四點探針(4-point probe) 9
2-2-4.2 X光繞射儀(XRD) 10
2-2-4.3橢圓偏光儀 ( Ellipsometer ) 13
2-2-4.4霍爾量測 ( Hall measurement ) 14
2-2-4.5原子力顯微鏡 (AFM ) 15
2-3 元件製程 16
2-3-1 薄膜成長 16
2-3-2 太陽能電池元件製程 17
第三章 實驗結果 24
3-1 ITO薄膜特性 24
3-1-1 片電阻值（Sheet resistance） 24
3-1-2 X光繞射（XRD） 25
3-1-3 折射率（Index） 26
3-1-4 霍爾量測（Hall measurement） 27
3-1-5 表面粗糙度（Roughness） 29
3-2 太陽能電池特性 33
第四章 結論 35
參考文獻 36

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