C545T和NPB 的發光特性在多孔矽上被研究，多孔矽結構的形成是藉由p-type矽晶片在氫氟酸溶液的陽極反應，大約100Å的孔洞大小和0.5μm左右的深度的形成是藉由改變電解條件，包括氫氟酸濃度、反應時間、電流密度和電壓。C545T和NPB沉積在多孔矽裡面的方法是利用旋轉塗鋪、浸漬於超音波振盪器和熱蒸鍍的技術。當C545T和NPB的材料被旋轉塗鋪在多孔矽試片裡被發現發光波長約在580nm和440nm左右。然而，當NPB材料利用超音波振盪浸漬和熱蒸鍍的方法時，額外發現第二個峯值的存在，約在430nm左右。而我們利用SEM去分析確認當材料利用超音波振盪和真空蒸鍍有無擴散進入到孔洞裡面去。

Photo luminescence of C545T and NPB on porous Si was studied. The porous Si structures were obtained by anodic dissolution of p-type Si in a concentrated HF solution. Pore diameter of 100Å and pore layer of a thickness around 0.5μm were formed by varying the electrolytic condition, including HF concentration, anodiztation time, electrolytic current and voltage. The photo luminescence of C545T and NPB were investigated by depositing them onto the porous Si substrate using spin coating, dipping with ultrasonic agitation and thermal evaporation techniques. The photo luminescence of C545T and NPB were found to peak around 580nm and 440nm for samples prepared by spin coating. However, for NPB samples deposited by dipping with ultrasonic agitation and thermal evaporation, additional photo luminescence peak at 430nm were observed. SEM photos analysis confirm that the organic materials can diffuse into the Si pores by ultrasonic agitation and deposition in vacuum.

第一章 多孔隙矽之特性 1
1-1 J-V特性曲線 2
1-2 表面溶解反應 3
1-3 實驗溶液之選擇 6
1-4 Photo luminescence 特性之研究 8
第二章 歐姆接觸原理與量測 9
2-1 金屬與半導體接觸理論 9
2-2 歐姆接觸理論 14
2-2-1 理想的非整流位障 14
2-2-2 穿隧位障 14
2-2-3 特徵接觸電阻 16
2-2-4 傳輸線模型理論 18
2-3 元件特性量測 19
2-3-1 鋁金屬電極歐姆接觸特性分析 19
第三章 實驗方法 26
3-1 實驗設備 26
3-2 實驗步驟 27
3-2-1 清洗基板 27
3-2-2 陽極處理 28
3-3 實驗結果與討論 28
3-3-1 改變電壓 28
3-3-2 改變濃度 33
第四章 Photo luminescence量測 37
4-1 C545T材料之填充與量測 37
4-1-1 實驗步驟 37
4-1-2 試片之量測 38
4-2 NPB材料之填充與量測 41
4-2-1 試片之量測 42
第五章 結論 45

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