這個研究是觀察VCSEL 啟動過程的偏振切換現象，在尚未達到穩定時，雷射會有一連串的偏振切換。本實驗研究方法是在不同的電流與溫度下，觀察偏振切換時間的關係。在固定電流5.5 mA 時剛啟動雷射時是Y 偏振持續T1 秒，接著為X 偏振持續T2 秒，再緊接Y偏振持續T3 秒，然後再切換至X 偏振達到穩定。實驗發現在高溫與
高電流情況下，切換的時間會縮短，但是時間的比例卻相同，有比例係數e2。觀察時間外，也觀察光場分佈，實驗發現切換過程中X(T2)偏振的光場分佈和X(T4)偏振的光場分佈是不同的。雷射穩定後改變電流大小，光場分佈有週期性的關係，每上升0.32 mA 會重複出現相同的光場分佈。這個研究讓我們對雷射在剛啟動過程中的偏振切換有了進一步的了解。

This research studied the polarization switching during theturned on of a VCSEL. The switching periods and beam profilewere investigated by the variation of the driving current and heat sink temperature of the laser. The laser would present a series of polarization switching before it achieved the stable state. At a laser’s current of 5.5 mA, the laser first output in Y-polarization for a period of T1 after the laser was turned on. Then the laser switched to X-polarization and maintained for a period of T2. In the third period of T3, the laser switched to Y-polarization and followed by a final switch to X-polarization. We found that the switching periods would decrease under higher temperature and larger driving current, while the ratio of T2 /T1 and T3/T2 did not change, approximating to a constant of e2.We also found that the beam profile of X-polarization would change periodically with a period of 0.32 mA in the region of 3.5 to 6.0 mA. These results will help to understand the mechanism of the polarization switching when the
laser is turned on.

目錄
中文摘要
英文摘要
致謝辭
目錄
圖表目錄
第一節簡介
第二節VCSEL 及EEL 的原理與橫模縱模比較
第三節VCSEL 偏振與溫度的影響
第四節實驗系統介紹
第五節實驗結果與討論
第六節結論
參考資料
附錄A 光度計輸出電壓與光強度修正
附錄B 光強度-電流曲線自動化程式

參考資料
1. C. Chen, P.O. Leisher, A. A. Allerman, K. M. Geib, and K. D. Choquette,“Temperature Analysis of Threshold Current inInfrared Vertical-Cavity Surface-Emitting Lasers,” IEEE Journal of Quantum Electronics, vol. 42, No. 10, pp.1078-1083, 2006.
2. G. P. Agrawal and N. K. Dutta, “Semiconductor Lasers,”Van Nostrand, New York, 1993.
3. K. Iga, “Surface-Emitting Laser—Its Birth and Generation ofNew Optoelectronics Field,”IEEE J. Select. Topics Quantum Electron., vol. 6, no.6, pp.1201-1215, 2000.
4. K. D. Choquette, D. A. Richie, and R. E. Leibenguth,
“Temperature dependence of gain-guided vertical-cavity surface-emitting laser polarization,” Appl. Phys. Lett., vol. 64, pp. 2062–2064, 1994.
5. S.M.SZE, “Semiconductor Devices Physics andTechnology,”2nd ed., pp.299-304, John Wiley& Sons, 2002.