Responsive image
博碩士論文 etd-0623101-115303 詳細資訊
Title page for etd-0623101-115303
論文名稱
Title
利用平坦化製程技術製作並量測0.808微米砷化鋁鎵雷射二極體
Fabrication and Characterization of Planarized 0.808μm AlGaAs Diode Lasers
系所名稱
Department
畢業學年期
Year, semester
語文別
Language
學位類別
Degree
頁數
Number of pages
38
研究生
Author
指導教授
Advisor
召集委員
Convenor
口試委員
Advisory Committee
口試日期
Date of Exam
2001-06-11
繳交日期
Date of Submission
2001-06-23
關鍵字
Keywords
砷化鋁鎵、平坦化
AlGaAs, Planarized
統計
Statistics
本論文已被瀏覽 5705 次,被下載 3894
The thesis/dissertation has been browsed 5705 times, has been downloaded 3894 times.
中文摘要
摘要

本篇論文主要是利用平坦化製程技術,製作0.808μm雷射二極體。我們使用的是樑脊式結構,在樑脊蝕刻完成後,先以磁式濺鍍機長上一層SiO2薄膜,然後塗鋪高分子材料BCB(Benzocyclobutene 苯環丁烯)作為平坦化之用,樑脊上方的SiO2及BCB則以乾蝕刻方式清除。最後蒸鍍上接面金屬。完成雷射製作後,將晶片切割,使共振腔長度約900μm,量測其直流特性。我們並製作了傳統的樑脊式雷射,作為比較。
量測結果得到平坦化雷射的啟動電流密度和啟動電壓為385 A/cm2、2.1 V,微分量子效率為82%。傳統樑脊式雷射的啟動電流密度和啟動電壓為385 A/cm2、2.5 V,微分量子效率為 77%。
Abstract
Abstract

Ridge-type 0.808μm AlGaAs diode lasers with a planar waveguide structure have been successfully fabricated. After ridge etching, a SiO2 thin film is sputtered onto the sample as the surface passivation layer, and then the BCB(Benzocyclobutene)polymer is coated for surface planarization. Before matalization, the thin polymer and SiO2 layers above the ridge are removed by dry etching technique. The fabrication was completed by evaporating contact metals to the samples.
The cavity length of the measured laser diode is 900μm. The threshold current density and threshold voltage of the planarized device are 385 A/cm2 and 2.1 V. The differential quantum efficiency as large as 82% is obtained. In addition, a conventional ridge-type laser is also fabricated for comparison. The threshold current density and threshold voltage of the conventional ridge-type device is 385 A/cm2 and 2.5 V. The differential quantum efficiency of is 77%.

目次 Table of Contents
目錄

第一章 介紹 1
第二章 模擬分析 4
第三章 元件製作 7
3-1 樑脊式雷射製程 7
3-1.1 樑脊蝕刻 7
3-1.2 表面保護絕緣 10
3-1.2 接面金屬蒸鍍 11
3-2 平坦化雷射製程 15
3-2.1 樑脊蝕刻 15
3-2.2 平坦化 17
3-2.3 接面金屬蒸鍍 19
3-3 討論 21
第四章 元件特性量測 27
4-1 量測結果 27
4-2 討論 34
第五章 結論 35

參考文獻
參考文獻 References
參考文獻

1.D. Piehler, “Compact Blue/Green Solid State Lasers for the OEM Marketplace”,IEEE/LEOS Annual Meeting, 1994.
2.R. L. Byer, “Diode Laser-Pumped Solid State Lasers”, Science, 239, p.742-747.
3.G. J. King, and T. Baer, “Single-Frequency Operation in Solid State Laser Materials with Short Absorption Depths”, IEEE J. of Quantum Electronics, JQE-26, p.1457-1459, 1990.
4. Nappi-J Ovtchinnikov-A Asonen-H Savolainen-P Pessa-M, “Limitations of 2-Dimensional Passive Wave-Guide Model for Lambda=980 nm Al-Free Ridge-Wave-Guide Lasers”, APPLIED PHYSICS LETTERS 1994, vol 64, Iss 17, pp 2203-2205
5.Ch. Harder, B.J. Van Zeghbroeck, M.P. Kesler, H.P. Meier, P.Vettiger, D.J. Webb, and P. Wolf, “High Speed GaAs/AlGaAs Optoelectronic Devices for Computer Applications”, IBM J. Res. Develop., vol.34, p.568-584, 1990.
6.Martin A. Afromowitz, “Refractive Index of Ga1-xAlxAs”, Solid State Communications, Vol.15, p. 59-63, 1974.
7.R.J. Shul, C.T. Sullivan, and G.B. McClellan, “Anisotropic ECR Etching of Benzocyclobutene”,Electronics Letters, vol.31, No.22, p.1919~1921,Oct. 1995.
8.G.K. Reeves and H.B. Harrison, “Obtaining the Specific Contact Resistance from Transmission Line Model Measurement”, IEEE Electron Device Letters, EDL-3, No. 5, p.111-113, May. 1982.
9.E. Yamaguchi et al., “Ohmic Contacts to Si-implanted InP”, Solid-State Electron., vol.24, p263, 1981.
10.W. Kellner, “Planar Ohmic Contacts to n-type GaAs:determination of contact parameters using the transmission line model”, Siemens Forsch-.-u. Entwickl-Ber., vol.4, p.137, 1975.
11.Unger, P. Roentgin, G. L. Bona, “Junction-side up Operation of AlGaInP lasers with very low threshold currents”, Electron. Lett., Vol.28, p.1531-1532, July 1992.
12.Haiyin Sun, “Measurement of laser diode astigmatism”, Optical Engineering, vol. 36, No. 4, p. 1082-1087. April 1997.
13.Govind P. Agrawal, and Niloy K. Dutta, “Semiconductor lasers”, Van Nostrand Reinhold, 1993.
14.Bahha E. A. Saleh, and Malvin Carl Teich, “Fundamentals of Photonics”, John Wiley&Sons, 1991.
15.Bor June Chen, “Fabrication and Characterization of a Planar 0.67μm Diode laser with Facet Coating”, Institute of Electro-Optical Engineering, NSYSU, p.31, 1999.
16.Govind P. Agrawal, and Niloy K.Dutta, “Semicondutor Lasers”, Van Nostrand Reinhold, 1993.
17.Hu-SY Young-DB Gossard-AC Coldren-LA, “The Effect of Lateral Leakage Current on the Experimental Gain Current-Density Curve in Quantum-Well Ridge-Wave-Guide Lasers”, IEEE Journal of Quantum Electronics, vol.3, Iss 10, p.2245-2250,1994.
18.Hu-SY Corzine-SW Law-KK Young-DB Gossard-AC Coldren-LA Mertz-JL, “Lateral Carrier Diffusion and Surface Recombination in InGaAs/AlGaAs Quantum-Well Ridge-Wave-Guide Lasers”, Journal of Applied Physics 1994, vol.76, Iss 8, p.4479-4487.
電子全文 Fulltext
本電子全文僅授權使用者為學術研究之目的,進行個人非營利性質之檢索、閱讀、列印。請遵守中華民國著作權法之相關規定,切勿任意重製、散佈、改作、轉貼、播送,以免觸法。
論文使用權限 Thesis access permission:校內校外完全公開 unrestricted
開放時間 Available:
校內 Campus: 已公開 available
校外 Off-campus: 已公開 available


紙本論文 Printed copies
紙本論文的公開資訊在102學年度以後相對較為完整。如果需要查詢101學年度以前的紙本論文公開資訊,請聯繫圖資處紙本論文服務櫃台。如有不便之處敬請見諒。
開放時間 available 已公開 available

QR Code