本論文是以分子束磊晶成長法之二六族硒化鋅系列(ZnSe)半導體為樣品材料，以不破壞樣品表面的光調制反射光譜量測技術（Photorefletance：PR）來量測ZnSe/GaAs。

在GaAs上長一層ZnSe的磊晶層。由於ZnSe和GaAs晶格常數的不匹配，所以在ZnSe和GaAs接面處產生應力（stress），使得ZnSe磊晶層產生應變，造成原本是簡併的輕電洞帶及重電洞帶分裂。輕電洞與重電洞躍遷至導帶的能量分別為 ELH、ELL 。本論文以PR實驗探討不同厚度的ZnSe磊晶層在低溫下的ΔE和應變量。以及利用Varshni關係式吻合，可發現ELH、ELL隨溫度降低而變大。及展寬參數和溫度的關係。

We have studies the II-VI ternary compound semiconductor ZnSe grown by molecular beam epitaxy （MBE）Method. The modulation spectroscopy was used to study ZnSe.

ZnSe epilayer was grown on GaAs substrate. The lattice mismatch（0.27 ％）between GaAs and ZnSe create a strain at the GaAs/ZnSe interface. The strain will remove the degeneracy of heavy and light holes to conduction band transition energies. We use the photoreflectance to measure the energy of different thickness ZnSe epilayers at low temperature. It was found that as the epilayer thickness becomes larger, theΔE will become smaller. We have also analyzed the energy of different temperatures in terms of Varshni relation, and the temperature dependence of the broadening parameters.

第一章 簡介
第二章 調制光譜學原理
2.1介電函數和反射係數的關係
2.2電子躍遷與介電函數的關係
2.3低電場的情況
第三章 實驗設計
3.1實驗樣品
3.2實驗儀器與量測方法
第四章 結果與討論
第五章 結論
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