實現氧化石墨烯布拉格光柵(Graphene oxide grating, GO-grating)披覆於矽波導上，提供高靈敏與精確的光譜響應為本論文主要研究目標。以往布拉格光柵結合高折射率差SOI的晶片設計，由於在矽波導側壁的光柵製程技術解析度要求非常高，需使用電子束直寫或先進步進機製作，且製作出的光柵仍會有平滑失真情形，造成光柵耦合係數不易控制，而高折射差的SOI平台亦不易達到窄頻寬效果(<1 nm)。
本論文提出了一個新穎異質整合製程，利用全像術高解析度光柵整合於SOI波導成功實現次波長氧化石墨烯光柵結構，為了因應未來產業端量產化，更展示此技術製作出大面積氧化石墨烯光柵的能力，為了驗證均勻性，利用原子力顯微鏡(AFM)確認其厚度最大誤差約為7.3 nm，光學特性方面，利用光學繞射系統量測其繞射效率與繞射週期平均誤差分別為2x10-4 ± 1.43x10-4與0.685 nm，不僅如此，製作完成的GO-grating厚度，亦能藉由Ozone descum精準控制薄膜厚度最薄可達4 nm。為了能將GO-grating實現於各種基板(如軟板、凹凸表面以及各式半導體晶片)，我們利用PMMA協助轉移GO-grating技術，將GO-grating轉移至矽波導上，因GO折射率僅為1.58左右，因此易於製作窄線寬反射器，且製作出的GO-grating披覆於矽波導上所產生的sharp其半高寬僅0.37 nm，未來我們將利用GO-grating應用於各種光學領域，如鈣鈦礦太陽能電池、液晶配向、光纖、光柵…等，更進一步實現週期漸變GO-grating於矽波導上，設計成帶通濾波器(bandpass filters)，相信利用GO-grating整合的光電元件能在感測與通訊領域有不錯的應用。

The difficulty in realizing narrowband (< 1nm) Bragg reflection from high-index-contrast silicon-on-insulator (SOI) waveguide has been released in this thesis by forming a thin graphene oxide grating atop the SOI waveguide. The graphene oxide (GO) gratings can be realized using interference lithography followed by reactive ion etching such that advanced stepper lithography is not required anymore to achieve waveguide grating structures. The patterning of thin GO film over a large sample area can be achieved by our recently-developed mirror-tunable two-beam interference lithography system. The variation in thickness, diffraction efficiency and periodicity of resultant GO gratings are about 7.3 nm, 2x10-4 ± 1.43x10-4, and 0.685 nm, respectively, across the entire 2-inch wafer. The thickness of thin GO film can be accurately controlled by ozone treatment with an etch rate of 0.3 nm/min. As-realized GO grating is then transferred onto the target SOI waveguide using PMMA-assisted transfer method. The refractive index of GO film is characterized to be 1.58. Finally, as-realized hybrid GO/Si waveguide grating enables a narrowband reflection with a bandwidth of only 0.37 nm. Such a narrowband reflection is difficult to achieve by simply applying sidewall gratings on SOI waveguides.

一、緒論 1
1-1 研究背景 2
1-2 研究動機 4
1-3 文獻回顧 6
1-4 次波長光柵繞射原理 17
1-5 論文架構 20
二、製程技術概要 21
2-1 現有關鍵技術/能力分析 21
2-1-1 技術流程 21
2-1-2 全像術系統 23
2-1-3 氧化石墨烯合成技術 26
2-2 先前製程方法與探討 37
三、新穎製程與實驗結果 42
3-1 製程步驟與方法 42
3-2 實驗結果與討論 45
3-2-1 大週期氧化石墨烯微結構 45
3-2-2 次波長氧化石墨烯次波長光柵結構 47
3-2-3 兩吋大面積Si基板 53
3-2-4 可調厚度光柵結構 58
3-2-5 可轉移氧化石墨烯光柵結構至其它基板 61
四、實現結合積體化矽波導之應用 66
4-1 單層GO-grating披覆於矽波導上 66
4-2 雙層GO-grating披覆於矽波導上 82
五、總結與未來工作 84
5-1結果與討論 84
5-2 未來研究方向 85
參考文獻 88
附錄 92

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