中文摘要
在微電子工業發展及快速進步速度的趨勢下，各項製程技術的研究也就愈是關鍵，應用模擬方法於設備之改善可減少成本與時間的花費，在半導體製程中化學氣相沈積是個重要設備，本研究即是以數值方法探討低壓化學氣相沈積（LPCVD）沈積矽時，反應器內的熱流場之現象，在數值模擬方法上，描述CVD反應器流場傳輸現象的統御方程式。
本研究將就LPCVD技術之單一晶片式（single wafer）反應器流場分佈狀態進行分析，探討冷壁式（Cold Wall）反應器之流場，空間假設為三維穩態層流，其中垂直式CVD反應腔體內單晶薄膜生長之參數主要分為兩大類：（Ⅰ）腔體幾何形狀參數（Ⅱ）腔體操作參數。垂直式CVD反應腔體內迴流現象發生的情況主要分為兩大類：（a）在自然對流下，晶圓表面之高溫使氣體密度下降而生成浮力上升，再受上方較冷之氣體冷卻而形成迴流循環（因巨大的溫度梯度所導致不穩定之密度梯度因而產生迴流之現象），避免此現象常用之方法是採用分子量較小之氣體(氫)，有時亦採取降低壓力概念；（b）CVD腔體內由於流場突然地分離所引發，即因體積膨脹而導致的迴流現象。
本研究數值模擬結果顯示：當(a)自然對流效應降低，(b)進口流速增加，(c)操作壓力降低，(d)噴氣頭距晶座距離縮小，(e)晶座溫度增加時皆有助於薄膜均勻性及沈積率的提高。

關鍵字：化學氣相沈積、數值模擬，自然對流。

Abstract
The development and advancement of microelectronics technology has been very dramatic. However the cost of creating new process technology by using experiment has been very high. By using computer simulation to evaluate the performance of these equipment, we are able to achieve the same goal at a much lower cost.

The reactor of chemical vapor deposition (CVD) is very important to semiconductor production process. This research use numerical method (simulation) to study the process parameters of Low-Pressure Chemical Vapor Deposition (LPCVD) of silicon (Si). In this simulation, the CVD reactor modelings are constructed and discredited by using implicit finite volume method. The grids are arranged in a staggered manner for the discretization of the governing equations. Then the SIMPLE-type algorithm is used to solve all of the discretized algebra equations.

Many people in the field are beginning to realize that these challenges can no longer be tackled with the traditional trial-and-error method which have dominated the CVD technology since its beginning, and that modeling may lead to better process and equipment design, reduced costs, and improved IC manufacturing. It is also to be expected that in the future, detailed CVD simulation models will not only be used in design and optimization, but also in real-time process control.


Key word: chemical vapor deposition, flow simulation, natural convection.

目錄
目錄 i
表目錄 iii
圖目錄 iv
中文摘要 vi
Abstract vii
符號說明 viii
第一章 緒論 1
1.1 研究背景與動機 1
1.2文獻回顧 2
1.3 研究內容 4
第二章 理論模式 6
2.1 物理現象 6
2.1.1薄膜沉積原理 6
2.1.2 化學沈積反應步驟 8
2.1.3 反應器爐體傳輸現象 9
2.2 基本假設 12
2.3 統御方程式 12
2.4 薄膜沈積特性與壁函數概述 16
2.5 物理模型 17
2.6 邊界條件 18
第三章 數值模擬方法 19
3.1 數值模擬軟體簡介 19
3.2 SIMPLE演算法則 20
3.3 上風差分法 22
3.4 收斂條件 24
3.5 數值方法之驗證 24
第四章 結果與討論 26
4.1 模擬案例分析 26
4.2 研究主題 27
4.3 參數探討 28
第五章 結論與建議 53
5.1 結論 53
5.2 建議 54
參考文獻 55

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