| URN |
etd-0624103-134454 |
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| Author |
Chung-Sung Lin |
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| Author's Email Address |
wendell2211@hotmail.com |
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| Statistics |
This thesis had been viewed 4590 times. Download 2494 times. |
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| Department |
Physics |
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| Year |
2002 |
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| Semester |
2 |
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| Degree |
Master |
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| Type of Document |
|
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| Language |
zh-TW.Big5 Chinese |
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| Title |
The Time-resolved Photoluminescence study of
Zn 1-x Cd x Se epilayer and ZnSe/Zn 0.91Cd0.09Se MQW |
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| Date of Defense |
2003-05-11 |
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| Page Count |
66 |
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| Keyword |
upconversion
carrier recombination
lifetime
|
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| Abstract |
Abstract：
We measured time-resolved PL of Zn1-XCdXSe epilayer and ZnSe/Zn0.91Cd0.09Se MQW by Upconversion experiment. The Zn1-XCdXSe epilayer was growth with four kind of Cadmium compositions (X=0.08、0.32、0.60 and 0.84). The thickness of the Zn1-XCdXSe epilayer is around 0.5μm. The ZnSe/Zn0.91Cd0.09Se MQW of well width thickness varies from 5nm、10nm、15nm to 20nm . From carrier recombination mechanism ,We get the two sample relative temperature dependence of radiative、nonradiative recombination lifetime and quantum efficiency , From nonradiative recombination lifetime formula , we can get trap concentration and capture cross section. At low temperature the two samples recombination process is dominated by radiative recombination process. The two samples increase nonradiative recombination process and decrease quantum efficiency with increasing temperature. At high temperature the two samples recombination process is dominated by nonradiative recombination process. |
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| Advisory Committee |
I-Min Jiang - chair
Li-Wei Tu - co-chair
Chie-Tong Kuo - co-chair
De-Jun Jang - advisor
|
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| Files |
indicate access worldwide |
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| Date of Submission |
2003-06-24 |
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