Responsive image
博碩士論文 etd-0624103-134454 詳細資訊
Title page for etd-0624103-134454
論文名稱
Title
硒化鎘鋅薄膜與硒化鋅/硒化鎘鋅多重量子井 螢光光譜的時間解析研究
The Time-resolved Photoluminescence study of Zn 1-x Cd x Se epilayer and ZnSe/Zn 0.91Cd0.09Se MQW
系所名稱
Department
畢業學年期
Year, semester
語文別
Language
學位類別
Degree
頁數
Number of pages
66
研究生
Author
指導教授
Advisor
召集委員
Convenor
口試委員
Advisory Committee
口試日期
Date of Exam
2003-05-11
繳交日期
Date of Submission
2003-06-24
關鍵字
Keywords
硒化鎘鋅、螢光生命期、載子結合
upconversion, carrier recombination, lifetime
統計
Statistics
本論文已被瀏覽 5751 次,被下載 4596
The thesis/dissertation has been browsed 5751 times, has been downloaded 4596 times.
中文摘要
中文摘要:

我們利用Upconversion實驗方法,量測硒化鎘鋅薄膜(Zn1-XCdXSe epilayer)和硒化鋅/硒化鎘鋅多重量子井(ZnSe/Zn0.91Cd0.09Se MQW)動態螢光光譜隨時間變化。硒化鎘鋅薄膜的Cd成份分別為0.08、0.32、0.60和0.84,厚度均為0.5μm;硒化鋅/硒化鎘鋅多重量子井中量子井寬度則有5nm、10nm、15nm和20nm四種寬度。我們由載子結合的機制(carrier recombination mechanism)和實驗的結果,可以得知這兩種樣品隨溫度變化的發光輻射結合生命期(lifetime)、非發光輻射結合生命期和量子效率,並且由非發光輻射結合生命期公式而得知 (trap concentration)與 (capture cross section)的乘積。由實驗結果得知,硒化鎘鋅薄膜和硒化鋅/硒化鎘鋅多重量子井在低溫時是發光輻射結合為主;當溫度上升時,硒化鎘鋅薄膜和硒化鋅/硒化鎘鋅多重量子井的非發光輻射結合也會隨著增加,量子效率則會更低。在高溫時非發光輻射結合則是主要的載子結合過程。
Abstract
Abstract:

We measured time-resolved PL of Zn1-XCdXSe epilayer and ZnSe/Zn0.91Cd0.09Se MQW by Upconversion experiment. The Zn1-XCdXSe epilayer was growth with four kind of Cadmium compositions (X=0.08、0.32、0.60 and 0.84). The thickness of the Zn1-XCdXSe epilayer is around 0.5μm. The ZnSe/Zn0.91Cd0.09Se MQW of well width thickness varies from 5nm、10nm、15nm to 20nm . From carrier recombination mechanism ,We get the two sample relative temperature dependence of radiative、nonradiative recombination lifetime and quantum efficiency , From nonradiative recombination lifetime formula , we can get trap concentration and capture cross section. At low temperature the two samples recombination process is dominated by radiative recombination process. The two samples increase nonradiative recombination process and decrease quantum efficiency with increasing temperature. At high temperature the two samples recombination process is dominated by nonradiative recombination process.
目次 Table of Contents
硒化鎘鋅薄膜與硒化鋅/硒化鎘鋅多重量子井
螢光光譜的時間解析研究

目錄

中文摘要 I
英文摘要 II
第一章 導論 1
第二章 Upconversion簡介與理論
2-1 Upconversion簡介 5
2-2 其他動態實驗方法 6
2-3 Upconversion理論
(1) SFG的產生 9
(2) 在晶體內的相位匹配 12
(3) 轉換效率(conversion efficiency) 15
第三章 半導體的載子結合(carrier recombination)
3-1 載子結合率(recombination rate) 18
3-2 螢光強度和發光、非發光輻射結合生命期 25
3-3 隨溫度變化的發光、非發光輻射結合生命期 27
3-4 在低溫下的發光輻射結合(radiative recombination) 28
第四章 實驗的設置與樣品的說明
4-1 樣品(Sample) 31
4-2 相位匹配示意圖與實驗裝置 32
第五章 實驗結果與討論 36
第六章 結論 64
Reference 65
參考文獻 References
Reference
1卡納安.卡諾(Kanaan Kano)著,孫士傑編譯,半導體元件,全華出版社 (2000)
2 R. L. Gunshor and A. V. Nurmikko,II-VI Blue/Green Light Emitters:Device Physics and Epitaxial Growth,Academic Press (1997)
3 陳光鑫,林振華,光電子學,全華圖書出版社
4 陳孟炬,淡江大學物理所碩士論文 (2000)
5 M. A. Haase,J. Qui,J. M. DePuydt,and H. Cheng,Appl. Phys.Lett 59,1272 (1991)
6 丁勝懋編著,雷射工程導論,中央圖書出版社
7 P.A. Franken,A.E. Hill,C.W. Peters,and G. weinsreich,Phys. Rev. Lett. 7,118 (1961)
8 J. A. Armstrong,N. Bloembergen,J. Ducuing,and P. S. Pershan,Phys. Rev. 127,1918 (1962)
9 V.G. Dmitriev,G.G. Gurzadyan,D.N. Nikogosyan,Handbook of nonlinear optical crystals,Springer (1991)
10 Calude Rullie`re,Femtosecond laser Pluses,Springer (1998)
11 Robert W. Boyd,Nonlinear Optics,Academic Press (1992)
12 Jageep Shan,IEEE Journal of Quantum Electronics 24,276 (1988)
13 B.K. Ridley,Phys. Rev. B 41,12190 (1990)
14 Donald A. Neamen,Semiconductor Physics and Devices,McGraw-Hill (1997)
15 W. H. Knox,R. L. Fork,M. C. Downer,D. A. B. Miller,T. H. Wood,and D. S. Chemla,Phys. Rev. Lett. 54,1306 (1985),
16 W. Shockley and W. T. Read,Phys. Rev. 87,835 (1952)
17 K. Nakano,Y. Kishita,S. Itoh,M. Ikeda,and A. Ishibashi,Phys. Rev. B 53,4722 (1996)
18 D. L. Rosen,Q. X. Li,and R. R. Alfano,Phys. Rev. B 31,2396(1985)
19 E. Pereira,G. Vilao,R. Seitz,Journal of Luminescence 72-74,705(1997)
20 X. Yang, L. J. Brillson,and A. D. Raisanen,J. Vac. Sci. Technol. A 14(3)
,867(1996)
21 S. Rein,T. Rehrl,W. Warta,and S. W. Glunz,Journal of Applied Physics 91
,2059(2002)
22 O. Goede,L. Jortner,and D. Henning,Phys. Stat. Solidi B 89,K183 (1978)
23 S. Lai and M. V. Klein,Phys. Rev. Lett. 44,1087 (1980)
24 E. Cohen and M. D. Sturge,Phys. Rev. B 25,3828 (1982)
25 C. Gourdon and P. Lavallard,Phys. Stat. Solidi B 153,641 (1989)
26 施采萱,2002年中原大學應物所碩士論文
27 E. Cohen,and M. D. Sturge,Phys. Rev. B 25 3828(1982)
28 O. Madelung,“Semiconductors Other than Group IV Elements and III-V Compounds”,Springer (1992)
29 Eun-joo Shin,Joo In Lee,Nguyen Quang Liem,Solid State Communication,102,855(1997)
30 D. B. Laks,C. G. Van de Walle,G. G. Neumark,and S. T. Pantelides,Phys. Rev. Lett 66,648(1991)
31 Kiyoshi Yoneda,Yuji Hishida,and Hiroaki lshii,Appl. Phys. Lett. 47,702(1985)
32 S. Jursenas,G. Kurilcik,and A. Zukauskas,Phys. Rev. B 54,16706(1996)
33 I. E. Ture,F. Poulin,A. W. Brinkman,and J. Woods,Journal of Crystal Growth 13,535 (1985)
34 V. I. Kozlovsky,Yu. G. Sadofyev,V. G. Litvinov,Journal of Crystal Growth 214-215,983(2000)
35 A. Y. Polyakov,N. B. Smirmov,A. V. Govorkov,M. Shin,M. Skowronski,and S. W. Greve,Journal of Applied Physics 84,870(1998)
36 R. Sarmiento,A. Somintac,L. Guiao,F. Agra,and A. Salvador,Phys. Rev. B 50 320(1990)
37 Y. F. Zhang,Q. Zhuo,M. H. Zhang,Q. Huang,and J. M. Zhou,Appl. Phys. Lett. 77,702(2000)
38 H. Wang,K. S. Wong,B. A. Foreman,Z. Y. Yang,and G. K. L. Wong,Journal of Applied Physics 83,4773(1998)
39 K. Cherkaoui,M. E. Murtagh,P. V. Kelly,and G. M. Crean,Journal of Applied Physics 92,2803(2002)
電子全文 Fulltext
本電子全文僅授權使用者為學術研究之目的,進行個人非營利性質之檢索、閱讀、列印。請遵守中華民國著作權法之相關規定,切勿任意重製、散佈、改作、轉貼、播送,以免觸法。
論文使用權限 Thesis access permission:校內校外完全公開 unrestricted
開放時間 Available:
校內 Campus: 已公開 available
校外 Off-campus: 已公開 available


紙本論文 Printed copies
紙本論文的公開資訊在102學年度以後相對較為完整。如果需要查詢101學年度以前的紙本論文公開資訊,請聯繫圖資處紙本論文服務櫃台。如有不便之處敬請見諒。
開放時間 available 已公開 available

QR Code