Title page for etd-0624103-134454


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URN etd-0624103-134454
Author Chung-Sung Lin
Author's Email Address wendell2211@hotmail.com
Statistics This thesis had been viewed 4691 times. Download 2787 times.
Department Physics
Year 2002
Semester 2
Degree Master
Type of Document
Language zh-TW.Big5 Chinese
Title The Time-resolved Photoluminescence study of
Zn 1-x Cd x Se epilayer and ZnSe/Zn 0.91Cd0.09Se MQW
Date of Defense 2003-05-11
Page Count 66
Keyword
  • upconversion
  • carrier recombination
  • lifetime
  • Abstract Abstract:

    We measured time-resolved PL of Zn1-XCdXSe epilayer and ZnSe/Zn0.91Cd0.09Se MQW by Upconversion experiment. The Zn1-XCdXSe epilayer was growth with four kind of Cadmium compositions (X=0.08、0.32、0.60 and 0.84). The thickness of the Zn1-XCdXSe epilayer is around 0.5μm. The ZnSe/Zn0.91Cd0.09Se MQW of well width thickness varies from 5nm、10nm、15nm to 20nm . From carrier recombination mechanism ,We get the two sample relative temperature dependence of radiative、nonradiative recombination lifetime and quantum efficiency , From nonradiative recombination lifetime formula , we can get trap concentration and capture cross section. At low temperature the two samples recombination process is dominated by radiative recombination process. The two samples increase nonradiative recombination process and decrease quantum efficiency with increasing temperature. At high temperature the two samples recombination process is dominated by nonradiative recombination process.
    Advisory Committee
  • I-Min Jiang - chair
  • Li-Wei Tu - co-chair
  • Chie-Tong Kuo - co-chair
  • De-Jun Jang - advisor
  • Files
  • etd-0624103-134454.pdf
  • indicate access worldwide
    Date of Submission 2003-06-24

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