本論文的研究目的為研製製程簡易且容易積體化的環形共振腔半導體雷射。在材料上，我們使用1.55

This paper presents design and fabrication of ring cavity semiconductor lasers with simple fabrication processes and good potential for integration. A 1.55-μm symmetric quantum well InGaAsP epi-layer wafer is used to fabricate the lasers. The fabrication processes involve a bi-level deep etching to reduce the bending losses.
Two geometric types of ring cavity semiconductor lasers have been investigated. For the type 1 ring cavity in the form of race tracks, two different designs are presented. One has a single ring resonator (SRR) design and the other has a coupled double ring resonators (DRR) design. The resonator of the type 2 ring cavity is formed between a cleaved facet and a loop mirror. Both a single ring resonator (SRR) design and a double ring resonator (DRR) design are presented for this type of cavity also.
The maximum saturation output light powers of 0.479 and 0.409 mW are observed in room temperature L-I measurements for type 1 and type 2 ring cavity semiconductor lasers respectively.
The spontaneous emission spectra of the type 1 ring cavity semiconductor lasers show a red-shift phenomenon under increasing drive currents. The type 1 ring cavity semiconductor lasers with ring resonators of 100 and 200 μm radii have also been found to exhibit an interesting wavelength clamping phenomenon of the output light.

目錄

第一章 簡介……………………………………………………………..1
1-1 前言…………………………………………………………….1
1-2 環形共振腔半導體雷射種類………………………………….2
1-3 論文架構……………………………………………………….2
第二章 元件之設計與原理……………………………………………..5
2-1 前言…………………………………………………………….5
2-2 多模干涉器之設計…………………………………………….5
2-3 型式一之環形共振腔半導體雷射之設計………………….....9
2-4型式二之環形共振腔半導體雷射之設計…….……………...12
第三章 製程步驟………………………………………………………15
3-1 前言…………………………………………………………...15
3-2 脊狀雷射之製程……………………………………………...15
3-3 環形共振腔半導體雷射之製程……………………………...25
第四章 結果分析與討論………………………………………………38
4-1 前言…………………………………………………………...38
4-2 半導體磊晶材料量測結果…………………………………...38
4-2-1 LD07161磊晶結構………………………………………..38
4-2-2 變溫光激放光光譜……………………………………….40
4-3脊狀雷射量測結果……………………………………………41
4-3-1輸出功率對電流曲線……………………………………..41
4-3-2 輸出光譜………………………………………………… 42
4-2-3 遠場拍攝圖……………………………………………….44
4-4型式一之環形共振腔半導體雷射量測結果……………………45
4-4-1輸出功率對電流曲線………………………………………45
4-4-2 輸出光譜………………………………………………...…49
4-5型式二之環形共振腔半導體雷射量測結果……………………53
4-5-1輸出功率對電流曲線………………………………….……53
第五章 結論……………………………………………………………57
參考文獻………………………………………………………………..58

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