本研究是結合p-i-n與串聯式結構，將上、下兩個相同的p-i-n發光元件以連接層連接起來。根據參考文獻，在串聯式結構元件裡常見的連接層都是以p型摻雜材料與n型摻雜材料所組成，而剛好p-i-n元件也會摻雜p型與n型物質，因此將2個p-i-n元件串連後其中的p、n介面剛好可以當作連接層來使用。與傳統的有機電激發光二極體(Organic light emitting diode；OLED)元件比較，在相同的電流密度下，串聯式(tandem)元件擁有較高的發光效率，因此在元件壽命方面也是串聯式元件佔優勢，而p-i-n元件則是有降低驅動電壓的優點。而本研究的研究主軸為(1)摻雜不同濃度的p型材料(F4-TCNQ)與n型材料(HAT-CN)製作單層發光元件量測其光電特性，發現隨著F4-TCNQ的摻雜濃度越高電性有變好的趨勢，但其元件效率也會隨著濃度的上升而下降。然而摻雜越高濃度的HAT-CN 則會使元件的光電特性變差，證實HAT-CN對電子的傳輸是較沒助益的。(2)之後將單層p-i-n元件進行串聯並以不同濃度的HAT-CN摻雜來做比較，發現在濃度為50%可以找到傳輸載子及產生載子的平衡點。最後所製成的串聯式p-i-n元件在電流密度為8.7 mA/cm2時有最大發光效率為16.2cd/A；在電流密度為5.8 mA/cm2時有最大功率效率1.8 lm/W。相較於基本元件7.4 cd/A其發光效率是有達到串聯式的效果的，而功率效率方面雖然最大值有所降低，但在高電流密度下還是串聯式p-i-n元件要來的好。

This study combine with p-i-n and tandem structure to obtain the p-i-n tandem structure OLED.Because of the tandem structures which are composed of p-type (F4-TCNQ) and n-type (HAT-CN) doped layers in common,we can connect two p-i-n units structure and take the p-n junction as interlayer.Some research topics are included in this research :
(1) Study of carrier generation and other optoelectronic characteristics for tandem cells.
(2) Study of different p-typed and n-typed concentration doped to basic structure.

The results shows that concentration of F4-TCNQ and HAT-CN will affect optoelectronic characteristics.And we final find the best concentration of HAT-CN(50%) to obtain the high efficiency p-i-n tandem structure with max current efficiency 16.2 cd/A and power efficiency 1.8 lm/W .

中文論文審定書…………………………………………………………………….……i
英文論文審定書…………………………………………………………………….......ii
誌謝……………………………………………………………………….………….….iii
中文摘要…………….……………………………………………………………….….iv
Abstract………………………………………..………………………………………..v
目錄……………………………………………………………………………….….….vi
圖目錄………………………………………………………………………………...…ix
第一章 緒論 1
1-1 前言 1
1-2 有機電激發光二極體的發展與歷史進程 2
1-3 OLED元件的基本結構 4
1-4 OLED元件基本發光原理 6
1-5 有機電激發光元件材料介紹 9
1-5-1 陽極 9
1-5-2 電洞注入層 9
1-5-3 電洞傳輸層 10
1-5-4 發光層 11
1-5-5 電子傳輸層 11
1-5-6 電子注入層 12
1-5-7 陰極 12
1-6 P-I-N與串聯式有機發光二極體介紹 13
1-7 OLED發光效率之定義和測量方法 17
1-8 有機發光二極體色彩鑑定 20
第二章 理論基礎與實驗動機 22
2-1有機電激發光之能量轉移機制 22
2-1-1 輻射能量轉移 23
2-1-2非輻射能量轉移 24
2-2濃度淬熄效應 26
2-3三重態自我毀滅現象 26
2-4藍色磷光材料 27
2-5 電容概論 29
2-6 研究動機 31
第三章 實驗步驟及製程 33
3-1實驗架構 33
3-2實驗材料 34
3-3實驗設備 35
3-3-1製程設備 35
3-3-2 量測設備 37
3-4實驗步驟 41
3-4-1 ITO 基板清潔 41
3-4-2 有機與金屬薄膜製程 42
3-4-3元件封裝製程與量測 44
第四章 結果與討論 46
4-1 元件材料選取 46
4-2 連階層載子產生特性分析 51
4-3 基本藍光元件光電特性分析 53
4-4 單層P-I-N藍光元件光電特性分析 56
4-5 串聯式P-I-N藍光元件光電特性分析 62
第五章 總結 68
第六章 參考文獻 70

[1] Pope M., Kallmann H. P. , Magnante, Journal of Chemical Physics
,38,2042(1963).
[2] Tang C. W. and VanSlyke S. A., Applied Physics Letters ,51,913,
(1987).
[3] Burrououghes J.H., Bradley D.D.C, Brown A.R., Marks R.N., MacKet K., Friend R.H., Burn P.L., Holmes A.B., Nature,347,539(1990).
[4] Tang C.W., Applied Physics Letters , 48,183(1985).
[5] Adachi C., Tokito S., Tsutsui T., Saito S.,Jpn. Journal of Applied Physics ,27,L713(1988).
[6] Era M., Adachi C., Tsutsui T., Ssito S., Chemical Physics Letters ,178, 488(1991).
[7] Kido J., Kohda M., Okuyama K., Nagai K., Applied Physics Letters, 61,761(1992).
[8] Kido J., Kimura M., Nagai K., Science,267,1332(1995).
[9] Kido J., Shionoya H., Nagai K., Applied Physics Letters , 67, 2281, (1995).
[10] Miyata S., Nalwa H. S., Organic Electroluminescent Materials and Devices, Gordon and Breach Science Publishers, Chap 9(1997).
[11] VanSlyke S.A., Chen C.H., Tang C.X., Applied Physics Letters , 69, 2160, (1996).
[12] Pai, D. M.; Yanus, J. F.; Stolka, M., Journal of Physical Chemistry, 88, 4714 (1984).
[13] O'Brien, D. F.; Baldo, M. A.; Thompson, M. E.; Forrest, S. R., Applied Physics Letters, 74, 442 (1999).
[14] Baldo, M. A.; Thompson, M. E.; Forrest, S. R., Nature, 403, 750 (2000).
[15] C. Ganzorig, M. Fujihira, Appl. Phys. Lett, 77, 4211 (2000)
[16] D. B. Romero, M. Schaer, L. Zuppiroli, B, Cesar, B. Francois, Appl. Phys.Lett, 67, 1659(1995)
[17] F. Huang, A. G. MacDiamid, B. R. Hsieh, Appl. Phys. Lett, 71, 2415 (1997)
[18] J. Blochwitz, M. Pfeiffer, T. Fritz, K. Leo, Appl. Phys. Lett, 73, 729 (1998)
[19] A. Yamamori, C. Adachi, T. Koyama, Y. Taniguchi, Appl. Phys. Lett, 72,2147 (1998)
[20] Y. Yamamoto, K. Yoshino, Y. Inuishi, J. Phys. Soc. Jpn., 47, 1887 (1979)
[21] T. Matsumoto, T. Nakada, J. Endo, K. Mori, N. Kawamura, A. Yokoi, J.Kido,Proceedings of IDMC’03, 413 (2003).
[22] C. C. Chang, S. W. Hwang, C. H. Chen and J. F. Chen, Jpn. J. Appl.Phys,43, 6418 (2004)
[23] H. Kanno, R. J. Holmes, Y. Sun, S. K. Cohen, and S. R. Forrest, Adv.mater,18, 339 (2006)
[24] B. Maennig, M. Pfeiffer, A. Nollau, X. Zhou, K. Leo, P. Simon, Phys. Review,64, 195208 (2001)
[25]Matsumoto, T. Nakada, J. Endo, K. Mori, N. Kawamura, A. Yokoi, J.Kido,Proceedings of IDMC’03, p.413, Feb. 18-21, 2003, Taipei, Taiwan
[26]S. Liao, K. P. Klubek, C. W. Tang, Appl. Phys. Lett, 84, 167 (2004)
[27]J. Brinstock, G.. He, S.Murano, A. Werner, O. Zeika, Proceedings of
SID’08, Los Angeles, USA, May. 20-23, p.822, (2008).
[28]H. Zhang, Y. Dai, D. Ma, Appl. Phys. Lett., 91, 123504, (2007).
[29]T. Matsumoto, T. Nakada, J. Endo, K. Mori, N. Kawamura, A. Yokoi,
J. Kido, Proceedings of IDMC’03, Taipei, Taiwan, Fed. 18-21, p.413,
(2003)
[30]H. Zhang, Y. Dai, D. Ma, Appl. Phys. Lett., 91, 123504, (2007).
[31]T. Y. Cho, C. L. Lin, C. C. Wu, Appl. Phys. Lett., 88, 111106, (2006).
[32]M. V. Madhav Rao, T. S. Huang, Y. K. Su, Y.T. Huang, Journal of The Electrochemical Society, 157, H69, (2010).
[33] Shoustikov A. A., You Y., and Thompson M. E., IEEE Journal on SelectedTopics in Quantum Electronics. 4, 3, (1998).
[34]C. W. T, S. A. VanSlyke, C. H. Chen, J. Appl. Phys., 65, 3610, (1989).
[35]陳金鑫、黃孝文著, “OLED有機電激發光材料與元件”, 五南出版社,
(2005).
[36] Shoustikov, A. A.; You, Y. J.; Thompson, M. E., Ieee Journal of
Selected Topics in Quantum Electronics, 4, 3 (1998).
[37] Baldo, M. A.; Adachi, C.; Forrest, S. R., Physical Review B, 62, 10967 (2000).
[38] (a) Baldo, M. A.; O'Brien, D. F.; You, Y.; Shoustikov, A.; Sibley, S.; Thompson, M. E.; Forrest, S. R., Nature, 395, 151 (1998).
(b) O'Brien, D. F.; Baldo, M. A.; Thompson, M. E.; Forrest, S. R., Applied Physics Letters, 74, 442 (1999).
(c) Adachi, C.; Baldo, M. A.; Forrest, S. R.; Lamansky, S.; Thompson, M. E.; Kwong, R. C., Applied Physics Letters, 78, 1622 (2001).
(d) Baldo, M. A.; Lamansky, S.; Burrows, P. E.; Thompson, M. E.; Forrest, S. R., Applied Physics Letters, 75, 4 (1999).
[39] Mu, H. C.; Shen, H.; Klotzkin, D., Solid-State Electronics, 48, 2085 (2004).
[40]L. S. Liao, K. P. Klubek, Appl. Phys.Lett, 92, 223311, (2008).
[41]T. Chiba, Y.J. Pu, R. Miyazaki, K.I. Nakayama, H. Sasabe, J. Kido,
Org. Electron., 12, 710, (2011).
[42]L. S. Liao, W. K. Slusarek, T. K. Hatwar, M. L. Ricks, D. L. Comfort,
Adv. Mater., 20, 324, (2008).
[43]J. Brinstock, G.. He, S.Murano, A. Werner, O. Zeika, Proceedings of
SID’08, Los Angeles, USA, May. 20-23, p.822, (2008).
[44]T. Chiba, Y.J. Pu, R. Miyazaki, K.I. Nakayama, H. Sasabe, J. Kido,
Org. Electron., 12, 710, (2011).
[45]施敏、伍國珏原著,張鼎張、劉柏村譯著, “半導體元件物理學”, 交大出版社,(2008)