本實驗探討Sb2SeTe2拓樸絕緣體表面抗氧化性，在不同氧化條件下，藉由本實驗運用物理性質測量系統(Physics Property Measurement System, PPMS)去量測其在低溫高磁場的環境會下會出現量子化週期性振盪 Shubnikov-de Haas Oscillation(SdH Oscillation)之變化，再藉由使用X光光電子能譜儀(X-ray photoelectron spectroscopic,XPS)去判斷表面是否有氧化現象。
而實驗結果顯示，Sb2SeTe2在不同的氧化程度下，其SdH性質並無明顯變化，同時也顯示其費米能階(Fermi level)沒有改變。這顯示氧化效應對於Sb2SeTe2 拓樸絕緣體表面態傳輸沒有影響。

In this study, the surface oxidation resistance of Sb2SeTe2 epitaxial insulator was investigated.
Analysis of Shubnikov-de Haas oscillations measurement data and investigated through their magneto-transport and X-ray photoelectron spectroscopic properties with samples freshly cleaved or exposed to air over various timeframes.
The data exhibit Shubnikov-de Haas oscillations with the same period of oscillations for all samples regardless of surface oxidation, and it mean
that there is no shift in Fermi levels and no smearing-out in the amplitude of oscillations suggests that the surface states of the studied topological insulators are impervious to surface oxidation

論文審定書 i
摘　要 ii
Abstract iii
目錄 iv
圖　次 vi
第一章 簡介 1
1-1 前言 1
1-2 研究動機 2
第二章 基本理論 3
2-1 拓樸絕緣體(topological insulator) 3
2-2 朗道能階(Landau level) 5
2-3 霍爾效應(Hall effect) 6
2-4 量子霍爾效應(Quantum Hall effect) 7
2-5 量子自旋霍爾效應(Quantum spin Hall effect) 8
2-6 Shubnikov-de Haas 振盪效應 9
第三章 樣品製備與儀器介紹 11
3-1 樣品製備 11
3-2 量測系統與方法 12
3-2-1 物理性質量測系統 PPMS 12
3-2-2 量測方法 15
3-3 X光光電子能譜儀(XPS) 16
第四章 實驗結果與討論 17
4-1 實驗架構 17
4-2 樣品表面氧化確認 18
4-2-1 Te 3d軌域 18
4-2-2 Sb 3d軌域 19
4-2-3 Se 3d軌域 20
4-2-4 樣品表面氧化結論 21
4-3 實驗數據分析討論 22
4-3-1橫向電阻比較 22
4-3-2 SdH振盪 - Onsager relation 討論 23
4-3-3新截面量測數據 25
4-3-4放置真空6個月後量測數據 26
4-3-5放置大氣2天後量測數據 27
4-3-6放置大氣7天後量測數據 28
4-3-7傅立葉圖振盪圖討論 29
4-3-8 SdH振盪- Lifshitz-Kosevich theory討論 30
第五章 結論 31
參考文獻 32

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