本文中，我們備製具有氧化銦(InOx)薄膜層的五氧化二鉭(Ta2O5)光波導，並從中研究氧化銦層的吸收效應。首先，Ta2O5薄膜由射頻磁控濺鍍法成長於具3μm thermal oxide的矽基板上，再經由曝光微影及電漿蝕刻研製而成Ta2O5脊狀波導；接著我們於Ta2O5光波導上覆蓋氧化銦薄膜形成一吸收層；最後以濺鍍沉積約1.8μm的二氧化矽作為頂部覆蓋層完成Ta2O5/InOx電光吸收調變器。
於波導元件製作，我們以CHF3電漿蝕刻形成Ta2O5核心，此外，再分別以15%及30%的通氧量濺鍍InOx薄膜層，再透過蝕刻頂部SiOx形成與InOx層的電極接觸。最終，濺鍍鋁背電極於矽基板完成吸收調變元件。在元件量測上，我們自行架設實驗量測系統，以紅光光源輔助對準，再以1310nm TOSA (Transmitter Optical Sub-assembly)雷射量測波導插入損耗；最後量測元件吸收調變於偏壓操作。
在實驗結果部分，我們成功做出傳輸損耗與耦合損耗分別為8.35dB/cm與3.39dB的Ta2O5脊狀波導，並且量測到當波導長度為7.3mm時的插入損耗為12.81dB；此外，得到具有30%通氧量InOx吸收層的Ta2O5光波導，其傳輸損耗為17.67dB/cm。而在具15%通氧量InOx的InOx-Ta2O5光波導，得到傳輸損耗為23.7dB/cm。在施予10V的偏壓下，Ta2O5/InOx電光調變器展示出約莫0.25的額外吸收損失，而在偏壓下此元件的低吸收損耗可以歸咎於本身較差的電極結構。

In the thesis, we fabricated Ta2O5 optical waveguide with a thin InOx layer and investigated the absorption effect of the InOx layer. The Ta2O5 films were prepared using the RF-magnetron sputtering system on silicon substrates with 3-μm thick thermal oxide. The waveguide devices obtained by conventional photolithography to define pattern and dry etching to form the Ta2O5 rib-waveguide. Furthermore, we deposited InOx thin layer upon the Ta2O5 rib to form a thin absorption layer. Finally, the Ta2O5/InOx electro-optical absorption modulator was completed by depositing 1.8-μm SiOx as top cladding using sputtering.
The waveguide devices were fabricated by first forming the Ta2O5 core using CHF3 plasma etching. In addition, we deposited InOx thin layer at 15% and 30% O2 partial pressure by sputtering. Contact to the InOx was formed by etching away the SiOx top cladding. Finally, the waveguide devices were forming the back Al contact to Si substrate to complete absorption modulator device. The waveguide and modulator devices were measured by a home-made optical system with 1310nm TOSA (Transmitter Optical Sub-assembly) laser.
As a result, we demonstrated the Ta2O5 rib-waveguide that propagation loss and coupling loss at 1310nm were 8.35dB/cm and 3.39dB, respectively. The insertion loss was 12.81dB with 7.3mm long Ta2O5 rib-waveguide. In addition, the propagation loss of the Ta2O5 rib-waveguide with thin InOx absorption layer at 30% oxygen partial pressure was 17.67dB/cm. The propagation loss of 15% O2 partial pressure InOx of the InOx -Ta2O5 rib-waveguide was 23.7dB/cm. At a bias of 10V, the Ta2O5/InOx electro-optical modulator exhibits an excess loss of only 0.25dB. The low absorption loss of the device can be caused by poor electrode structure for biasing.

中文論文審定書 i
英文論文審定書 ii
致謝 iii
摘 要 iv
ABSTRACT v
目錄 vii
表目錄 x
圖目錄 xi
第一章 緒論 1
1-1 前言 1
1-2 光纖與光波導 2
1-3 光吸收與調變器 3
1-3-1本質吸收、帶間吸收(Inter-band Absorption ) 3
1-3-2 雜質吸收(Impurity Absorption) 4
1-3-3自由載子吸收(Free Carrier Absorption) 4
1-3-4 電致調變器 4
1-4研究動機 6
第二章 製程材料與儀器介紹 8
2-1 氧化銦(InOx)與五氧化二坦(Ta2O5) 8
2-2 射頻磁控濺鍍 9
2-3 高溫爐管 11
2-4 霍爾量測儀 12
2-5 掃描式電子顯微鏡 13
2-6 曝光機 14
2-7 反應式離子蝕刻機 15
2-8 紫外光臭氧清洗機 16
2-9 晶圓切割機 17
2-10 研磨機 18
第三章 實驗步驟 19
3-1 材料長成條件 19
3-1-1 熱氧法二氧化矽(Thermal Oxide) 19
3-1-2 五氧化二鉭 (Tantalum Pentoxide – Ta2O5) 20
3-1-3 氧化銦(indium oxide) 22
3-1-4 濺鍍二氧化矽(sputter oxide) 25
3-2 實驗流程 26
3-2-1 實驗模擬與結構流程 26
3-2-2 Ta2O5薄膜備製 31
3-2-3 黃光微影 31
3-2-4 Ta2O5乾蝕刻 34
3-2-5 濺鍍InO吸收層 35
3-2-6 濺鍍SiO2覆蓋層 35
3-2-7 切割晶片 35
3-2-8 研磨光波導斷面 36
3-2-9 黃光微影 37
3-2-10 二氧化矽濕蝕刻 39
3-2-11 濺鍍背部鋁電極 40
3-2-12 清洗試片 40
3-3 量測方法 41
3-3-1 波導插入損耗 41
3-3-2 電致吸收量測 43
第四章 結果與討論 45
4-1 光波導製程探討 45
4-2 元件量測結果 47
4-2-1 Ta2O5長直波導 47
3-2-2 InOx -Ta2O5波導量測 49
4-2-3 電致吸收量測 50
4-3未來結構 53
第五章 結論與未來展望 55
參考文獻 57

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