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博碩士論文 etd-0624118-181800 詳細資訊
Title page for etd-0624118-181800
論文名稱
Title
在矽光學平台上設計與製造CWDM4濾波器
Designs and fabrication of the CWDM4 filter on Si optical bench
系所名稱
Department
畢業學年期
Year, semester
語文別
Language
學位類別
Degree
頁數
Number of pages
49
研究生
Author
指導教授
Advisor
召集委員
Convenor
口試委員
Advisory Committee
口試日期
Date of Exam
2018-07-18
繳交日期
Date of Submission
2018-07-24
關鍵字
Keywords
V槽、解多工器、矽光學平台、薄膜干涉濾波器、梯度折射率透鏡
thin film filter, Si optical bench, GRIN lens, V-groove, demultiplexing
統計
Statistics
本論文已被瀏覽 5665 次,被下載 21
The thesis/dissertation has been browsed 5665 times, has been downloaded 21 times.
中文摘要
在本論文中在矽光學平台上以薄膜濾波技術為基礎實現了低密度分波多工器(Coarse wavelength division multiplexing, CWDM),以三埠(Port)結構來運行解多工器(Demultiplexing)功能。入射光纖中波段1271nm、1291nm、1311nm和1331nm的入射光利用梯度折射率透鏡(Gradient index lens, GRIN lens)和薄膜干涉濾波器 (Thin film filter, TFF)多工並轉移至四條輸出光纖,使用矽光學平台上的V槽(V-groove)來定位光纖、GRIN lens和TFF,符合TFF中心波長的光可以穿過放置在兩顆GRIN lens中間的TFF並到達輸出埠,剩下的波長則會被TFF反射並藉由GRIN lens聚焦到下一條通道的輸出光纖。
從TFF反射的光損耗低於5dB,但是因為載具對於方向控制的不穩定性,量測到的最高的損耗為7dB,波長為1271nm、1291nm、1311nm和1331輸出埠的插入損耗分別為6.3d B、9.9dB、14.7dB和21.7dB。
Abstract
In this thesis, we realized coarse wavelength division multiplexing(CWDM) on silicon optical bench based on thin film filter(TFF) technology. Three-port structure was used to perform the demultiplexing function. Incident lights of 1271nm, 1291nm, 1311nm, and 1331nm wavelengths from the input fiber were demultiplexed and transferred to the four output fibers using GRIN lenses and TFFs. The positions of the fibers, GRIN lens, and TFFs were defined by V-groove on the Si optical bench. Lights with wavelengths matching to the center wavelengths of the TFFs can then pass through the TFFs, which are located between the two GRIN lenses, and reach the output ports. The rest of the wavelengths will be reflected by the TFF and refocused by the GRIN lens to the next input fibers.
The optical loss of the reflection of lights from the TFF is less than 5dB. However, maximum loss of 7dB was measured due to poor position control of the fixtures. The insertion losses of the ports of 1271nm, 1291nm, 1311nm, and 1331nm are 6.3dB, 9.9dB, 14.7dB, and 21.7dB, respectively.
目次 Table of Contents
中文審定書 i
英文審定書 ii
致謝 iii
摘要 iv
Abstract v
目錄 vi
圖目錄 viii
表目錄 x
第一章 緒論 1
1-1 前言 1
1-2 低密度分波多工器 2
1-3 實驗動機 3
第二章 製作材料與光學模擬 5
2-1 儀器介紹 5
2-1-1 高溫石英爐管 5
2-1-2 紫外光臭氧清洗機 6
2-1-3 曝光機 6
2-1-4 晶元切割機 7
2-3 梯度折射率透鏡 8
2-4 薄膜干涉濾波片 9
2-5 光學模擬 10
第三章 原理及實驗步驟 13
3-1 濕蝕刻 13
3-1-1 非等向性蝕刻 15
3-2 光罩設計 17
3-3 V槽製作 19
3-3-1 清洗基板 19
3-3-2 成長熱氧化層 20
3-3-3 黃光微影 21
3-3-4 淺蝕刻 23
3-3-5 保護層製備 24
3-3-6 深蝕刻 26
3-4 CWDM製作及量測系統 27
3-4-1 切割 27
3-4-2 光學系統 28
3-4-3 CWDM製作 30
第四章 結果與討論 32
4-1 CWDM量測 32
4-2 損耗分析 33
第五章 結論與未來展望 36
參考文獻 37
參考文獻 References
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[6] 张美玲, and 邹华. "梯度折射率透镜的研究 Research of Gradient Refractive Index Lens." Optoelectronics 6.02 (2016): 101.
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[9] https://ece.uwaterloo.ca/~bcui/?page_id=20
[10] 朱柏豪. "什麼是蝕刻 (Etching)?." 國家奈米元件實驗室奈米通訊24.2 (2017): 29-32.
[11] H. Seidel, L. Csepregi, A. Heuberger, and H. Baumgartel,“Anisotropic etching of crystalline silicon in alkaline solution-Part I.Orientation dependence and behavior of passivation layer”, J.Electrochem. Soc., Vol. 137, No. 11, pp. 3612-3626, (1990).
[12] H. Seidel, L. Csepregi, A. Heuberger, and H. Baumgartel,“Anisotropic etching of crystalline silicon in alkaline solution-Part II.Influence of dopants”, J. Electrochem. Soc., Vol. 137, No. 11, pp.3626-3632, (1990).
[13] Lang, Walter. "Silicon microstructuring technology." Materials Science and Engineering: R: Reports 17.1 (1996): 1-55.
[14] http://www-inst.eecs.berkeley.edu/~ee143/fa10/lectures/Lec_06.pdf
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