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論文名稱 Title |
Zn1-xMnxSe/GaAs半導體的光調制光譜研究 The study on Photoreflectance spectra of Zn1-xMnxSe/GaAs |
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系所名稱 Department |
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畢業學年期 Year, semester |
語文別 Language |
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學位類別 Degree |
頁數 Number of pages |
49 |
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研究生 Author |
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指導教授 Advisor |
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召集委員 Convenor |
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口試委員 Advisory Committee |
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口試日期 Date of Exam |
2001-06-13 |
繳交日期 Date of Submission |
2001-06-25 |
關鍵字 Keywords |
重電洞帶、雙軸壓縮應變、光調制反射光譜、輕電洞帶 photoreflectance spectroscopy, heavy hole band, biaxial compressive strain, light hole band |
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統計 Statistics |
本論文已被瀏覽 5642 次,被下載 24 次 The thesis/dissertation has been browsed 5642 times, has been downloaded 24 times. |
中文摘要 |
在Zn1-xMnxSe/GaAs樣品中,由於磊晶層Zn1-xMnxSe與基板GaAs因晶格常數不同,造成晶格不匹配,導至雙軸壓縮應變的產生,並造成重電洞帶與輕電洞帶的分裂。 本文即是利用光調制反射光譜技術,來對Zn1-xMnxSe中的應變效應做研究。從實驗結果中我們發現,雙軸應變所造成的能帶分裂量與Mn的濃度有關,兩者幾乎呈一線性關係。 同時我們也量測了Zn0.96Mn0.04Se/GaAs在不同溫度下的光調制反射光譜,並以Varshni關係式來分析躍遷能量與溫度的關係。 |
Abstract |
In this work,we studied the strain effects on heavy hole (hh) and light hole (lh) bands of Zn1-xMnxSe/GaAs by photoreflectance (PR) spectroscopy . The Zn1-xMnxSe epilayers were grown on GaAs substrates by the MBE technique . There is a biaxial compressive strain exist in the epilayer, due to the different lattice constants between epilayers and substrates .The biaxial strain will shift hh and lh bands and lift the hh-lh degeneracy. In our experiment ,we found that the splitting of the hh and lh transition energies is almost lineally proportional to the Mn ion concentrations. It can be ascribed to the strain in the epilayer . We have also measured the PR of Zn0.96Mn0.04Se/GaAs at various temperatures , and analyzed the transition energy of different temperatures in terms of Varshni relation. |
目次 Table of Contents |
第一章 簡介 1 第二章 光調制光譜 2.1 介電函數和反射率的關係 4 2.2 電子躍遷 9 2.3 吸收係數 13 2.4 低電場調制 18 第三章 實驗 3.1 樣品 21 3.2 實驗裝置 22 第四章 結果與討論 4.1 Zn1-xMnxSe/GaAs中的應變效應 25 4.2 實驗結果分析與討論 29 第五章 結論 43 附錄一: 稀磁性半導體(DMS)的能隙特性 44 參考文獻 47 |
參考文獻 References |
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