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博碩士論文 etd-0625101-223132 詳細資訊
Title page for etd-0625101-223132
論文名稱
Title
垂直面射型陣列雷射覆晶結合對準位移之研究
The Study of Alignment Shift in Flip-Chip Bonding for VCSEL Array
系所名稱
Department
畢業學年期
Year, semester
語文別
Language
學位類別
Degree
頁數
Number of pages
67
研究生
Author
指導教授
Advisor
召集委員
Convenor
口試委員
Advisory Committee
口試日期
Date of Exam
2001-06-21
繳交日期
Date of Submission
2001-06-25
關鍵字
Keywords
覆晶結合
Flip-Chip Bonding
統計
Statistics
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中文摘要
本研究探討垂直面射型陣列雷射覆晶結合後對準位移的機制及耦光效率的影響。利用PadCAD模擬軟體,來探討不同體積的錫球凸塊與回復力之間的關係,矽基板與雷射陣列金屬墊片之模擬分別為直經10μm、20μm、30μm的圓形與邊長40μm的正方形。在已蒸鍍金/鉑/鈦的矽基板晶片上以雙脈衝電鍍機制成長錫鉛之錫球凸塊,並在迴焊製程中以助銲劑活化錫球凸塊表面的氧化層。
利用覆晶結合機將陣列雷射與矽基板結合,其操作溫度為210℃,工作時間5秒。覆晶結合後,對準位移最小量測值為2.2μm。
將此位移應用於垂直面射型陣列雷射模組中,估計將可得到耦光效率為48%。
Abstract
The study of alignment shift in flip chip bonding for VCSEL array was studied experimentally. We calculated the relation between the restoring force and the solder volume by the simulation software PadCAD. The metal pad size were 10μm, 20μm, 30μm in diameter shape and 40μm in square shape. The solder bump was electroplat by bidirection pulse in the silicon bench which was evaporated by Au/Pt/Ti. The oxidization in the surface of the solder was removed by using flux.
The VCSEL array and the Si-bench in flip chip bonding was operated at the temperature 210℃ and 5 seconds. After the flip chip bonding, the minimum alignment shift in X direction was measured to be 2.2μm. Base on the alignment shift measured result, the maximum coupling efficiency was calculated to be 48% for VCSEL array module.
目次 Table of Contents
內容目錄
頁次
中文摘要 ………………………………………………………………Ⅰ
英文摘要……………………………………………………………….Ⅱ
誌謝 ……………………………………………………………………Ⅲ
內容目錄 ………………………………………………………………Ⅳ
圖表目錄 ………………………………………………………………Ⅴ

第一章 導論 1
1-1 研究背景 1
1-2 研究目的 3
1-3 論文架構 3
第二章 錫球凸塊設計 5
2-1 模擬軟體 5
2-1-1 Surface Evolver 6
2-1-2 PadCAD與Surface Evolver的關係 7
2-1-3 PadCAD操作 7
2-1-4 PadCAD模擬計算模型 8
2-2 模擬結果 10
2-2-1 金屬墊片的設計 10
2-2-2 有高度支撐的條件 11
2-2-3 無高度支撐的條件 22
第三章 錫球凸塊製作 26
3-1 實驗構想與設計 26
3-2 錫球凸塊成長方式 27
3-3 電鍍法成長錫球凸塊 28
3-3-1 電鍍溶液配置 28
3-3-2 電鍍機台設計 30
3-3-3 脈衝電鍍 31
3-3-4 錫球凸塊製程 32
3-4 成分分析 34
3-5 錫球體積量測 36
3-6 電鍍結果 38
第四章 覆晶結合後對準誤差的量測 39
4-1 覆晶結合製程 39
4-1-1 覆晶結合結構 39
4-1-2 迴焊過程 41
4-2金相量測 45
4-2-1 試片準備 45
4-2-2 位移量測方法 48
4-2-3 量測結果與分析 50
第五章 對於雷射模組的影響 56
5-1 模組光路圖 56
5-2 耦光模型 57
5-3 耦合量測分析 58
5-4 結果分析 61
第六章 結論與未來工作 62
參考資料 65

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