本論文的目的是在長好二氧化矽(SiO2)厚膜的矽基板上製作單模態埋藏式高分子波導(Single mode buried polymer waveguides)。首先我們以BPM CAD光場模擬軟體計算此波導之光場分佈，並確定為單模波導，再將其結構製作在已成長二氧化矽的矽基板上。接著，我們以乾蝕刻的方式在二氧化矽中蝕刻出槽溝(trench)，在其中填入苯環丁烯(Benezocy-clobutene, BCB)，當作波導的導光層(guiding layer)，槽溝底部的SiO2當作底披覆層(bottom cladding layer)，再以回蝕法(etching back method)將BCB層蝕刻到與槽溝等高，最後塗鋪上一層sol-gel混合型材料，當作頂披覆層(top cladding layer)同時使波導表面平坦化。在量測上，我們利用回切法(cut back method)來量得波導的傳輸損耗(propagation loss)及耦合損耗(coupling loss)此波導的傳輸損耗為：TE波0.91dB/cm 和TM波0.97dB/cm，極化相依損耗為0.06dB/cm，而耦合損耗為1.78dB ◦

In this paper, a single mode buried polymer waveguide on silicon dioxide layer on silicon substrate is presented. The waveguide was completed by first obtaining the optical field distribution using a beam propagation method. The waveguide structure is carefully designed to ensure a single-mode operation of this device. The waveguide was fabricated by first etching a trench on SiO2 layer. Then Benezocy-clobutene (BCB) polymer was deposited onto the layer and cured in proper conditions. Finally, a thin hybrid sol-gel layer was used as the top cladding layer after the BCB polymer etch-back process. The propagation losses are 0.91dB/cm and 0.97dB/cm for TE and TM polarized lights. The polarization dependent loss is 0.06dB/cm. The coupling loss of the waveguide is 1.78dB.

第一章 序論 1
第二章 埋藏式高分子波導特性與理論模擬 6
2-1.埋藏式高分子波導之結構特性與分析 6
2-2.高分子材料的特性分析及應用 9
2-3.波導理論模擬 13
第三章 埋藏式高分子波導元件製作 16
3-1.製程流程圖 16
3-2.埋藏式高分子波導製程說明 17
3-3.實驗結果與討論 27
第四章 高分子埋藏式波導量測與分析 30
4-1.埋藏式高分子波導封裝及研磨 30
4-2.高分子埋藏式波導切割及研磨 30
4-3.光學量測系統架設 33
第五章 實驗結果與討論 36

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