Andre Geim & Konstantin Novoselov 因為在2004年發表了簡易石墨烯製備方法，而在2010年獲得物理諾貝爾獎。石墨烯擁有獨特的物理性質和導電特性，儼然已成為今日最熱門的顯學之一。然而在使用石墨烯上最常遭遇的困難之一就是石墨烯片間的凡得瓦爾力使得石墨烯極易撓曲或堆疊而失去高表面積及2D性質，甚至回復石墨結構而喪失石墨烯特性。避免石墨烯聚集堆疊及經各種石墨烯表面摻雜及官能基化，進而控制石墨烯的各種特性，例如磁性、電性.機械性質.表面性質,耐燃性等是當今各方研究的焦點。石墨烯/奈米碳管材料可藉由奈米碳管的管徑及長度來控制石墨烯的間隔，避免石墨烯堆疊失去石墨烯特性，並產生特殊電性，目前石墨烯/奈米碳管的製作多以spin coating 或靜電吸附方法將奈米碳管附著於石墨烯上，未見任何石墨烯上直接生長奈米碳管的報導，本研究目的即在探討在石墨烯上直接生長奈米碳管的方法。
以銅箔為基材使用常壓化學氣象沉積法(APCVD)生長單層、雙層或少數層石墨烯，再以銅觸媒催化奈米碳管生長的技術在石墨烯上生長特定長度的奈米碳管，本研究中藉由調控不同溫度(800~1000oC)、時間(1~5分鐘)、反應氣體的流速比例(甲烷:氫氣)及金屬觸媒濃度，來控制石墨烯/奈米碳管混成材料的各種特性。並以熱重分析儀、拉曼光譜儀、電子顯微鏡等儀器來探討不同反應條件對奈米碳管/石墨烯生長的影響。

Use APCVD method to synthesize graphene with CNT on Cu foil(G-CNT/Cu). Results represent that more H2 gas and higher temperarure would have fewer defects and highly crystalline FLG growth on Cu foil . Also indicated that introduction of more H2 gas would be beneficial for the quality of graphene. Diluted CH4 or C2H4 and high volume H2 gas are critical to suppress the templated growth and hence the graphene layer control. And the best reaction gas ratio for grow graphene is C2H4/H2=5/500sccm. Use Cu metal catalyst to grow CNT on graphene directly. Amounts and size of CNT would along with time increase become more and bigger, but accompany more defects. When reaction temperature higher, size and amount of CNT would increase, but defects reverse.

摘要 i
Abstract ii
目 錄 iii
圖目錄 v
表目錄 ix
第一章 緒 論 1
1-1.前言 1
1-2研究動機 1
1-3.實驗目的 2
第二章 文獻回顧 3
2-1石墨烯之基本特性 3
2-1-1.力學特性 4
2-1-2電學性質 4
2-2石墨烯的製備方法 5
2-2-1機械剝離法(mechanical exfoliation) 5
2-2-2磊晶成長法(Epitaxial growth) 6
2-2-3氧化還原法(reduction of grapheme oxide) 6
2-2-4化學氣相沈積法(chemical vapor deposition, CVD) 8
2-3石墨烯在銅箔上之生長機制探討 12
2-4奈米碳管之結構 13
2-5化學氣相沉積法製造奈米碳管的生長機制 15
2-6 銅觸媒生長奈米碳管的相關文獻 16
第三章 實驗方法 20
3-1實驗樣品 20
3-2實驗裝置 21
3-3實驗步驟 22
3-4分析方法 23
3-4-1 穿透式電子顯微鏡 (TEM，Transmission Electron Microscope) 23
3-4-2場發射型掃描式電子顯微鏡(SEM，Scanning Electron Microscope) 24
3-4-3拉曼光譜分析儀 ( Raman Spectrometer ) 25
3-4-4熱重分析儀 (TGA，Thermogravimetric Analyzer) 26
第四章 結果與討論 27
4-1 銅箔上生長石墨烯 27
4-1-1. 不同氣體流量對石墨烯之影響 27
4-1-2. 不同反應溫度對石墨烯之影響 30
4-1-3. 石墨烯在SEM下的形貌 32
4-2 金屬催化奈米碳管生長 32
4-2-1. 鎳金屬催化奈米碳管生長 32
4-2-2. 時間對銅金屬催化奈米碳管生長之影響 35
4-2-3. 碳源流量對銅觸媒催化奈米碳管之影響 41
4-2-4. 溫度對銅觸媒催化奈米碳管之影響 44
4-2-5 熱重損失分析 47
4-2-7 穿透式電子顯微鏡下觀察之形貌 56
第五章 結論 57
第六章 參考文獻 58

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