本論文詳述利用光致電流，多光子激發與共焦顯微等方法來研究InGaN藍光LED。以氮化鎵銦為基之半導體元件在過去數年已有重大之突破與進展，並已成為極重要之光電產品。另一方面多光子共焦顯微鏡已在生物醫學的應用上亦造成極大的衝擊。本論文即為利用多光子共焦顯微鏡來研究InGaN藍光二極體。我們發現在多光子激發下，InGaN呈現極大之區域不均勻性，而此一不均勻性並無法在單光子激發下觀測。此外我們亦利用顯微光譜對InGaN樣品作定點光譜分析，並對所觀測之結果作詳細之探討。

In this thesis the methods of optical beam induced current (OBIC), multi-photon excitation, and confocal microscopy were employed to study InGaN LED’s. Recently, important breakthrough and achievement have been made in the developments of InGaN based opto-electronic components. As a result, it is important to characterize the properties and the performance of InGaN based devices with various techniques. In this thesis, we have used 2-photon OBIC microscopy to observe various such LED’s. We found that the LED’s exhibit dotted pattern which can not be seen under 1-photon excitation. In addition, we have employed micro-spectroscopy to characterize the active layer of these LED’s. These results will be discussed in this thesis in detail.

目 錄
中文摘要 i
英文摘要 ii
目錄 iii
圖表目錄 v
第一章 導論 1

第二章 共焦掃描顯微術簡介
2.1 共焦掃描顯微鏡簡史 2
2.2 單光子共焦掃描顯微原理 2
2.3 雙光子共焦掃描顯微激發的原理 6
2.4 單光子與雙光子共焦掃描顯微鏡之比較 9
2.5 雙光子共焦掃描顯微鏡成像的特點 10
2.6 光致電流(Optical Beam Induced Current) 11
2.7 光致螢光( Photoluminescence ) 12

第三章 樣品簡介
3.1 氮化銦鎵�氮化鎵藍綠光發光元件之研究目的 14
3.2 GaN歷史簡介 14
3.3 樣品之取得 16

第四章 共焦顯微系統之實驗架設
4.1 光源系統 17
4.2 偵測系統 18
4.3 電腦系統 18
4.4 共焦顯微鏡系統 18
4.5 實驗方法 19

第五章、實驗結果探討及分析
5.1 光電流影像、螢光影像 21
5.2 觀測封裝LED 21
5.3 封裝的InGaN LED 22
5.4 觀測未封裝LED 32
5.5 未封裝的InGaN LED 33

第六章 雙光子顯微光譜系統
6.1 CCD之工作原理 36
6.2 液態氮冷卻CCD偵測器之優點 37
6.3 實驗架設 39
6.4 實驗步驟 40
6.6 實驗結果與分析 41

第七章、結論與未來展望 46

參考文獻 48

參考文獻

[ 1] T. Yamazaki,I. Komuro,and Y. Yazaki,J. Mol. Cell Cardiol. 27,133 (1995).
[ 2] T. Wilson and C. J. R. Sheppard, Theory and practice of scanning optical microscopy, (Academic Press, London, 1984).
[ 3] C.J.R. Sheppard and D.M. Shotton, Confocal Laser Scanning Microscopy, Springer, New York,(1997).
[ 4] M. Gu, Three dimensional confocal microscopy, (World Scientific, Singapore, 1996).
[ 5] M. Born and E. Wolf, Principles of Optics (Pergamon Press, Oxford, 1980).
[ 6] M. Göppert-Mayer, Ueber Elementarakte mit zwei Quantenspruengen, Ann. Phys. 9,273(1931).
[ 7] D.E. Spence, P. N. Kean, and W. Sibbett, 60-fsec pulse generation from a self-mode-locked Ti:sapphire laser, Opt. Lett. 16, 42 (1991); C.P. Huang, H.C. Kapteyn, J.W. McIntosh, and M.M. Murnane, Generation of transform-limited 32-fs pulses from a self-mode-locked Ti:sapphire laser, Opt. Lett. 17, 139 (1992); C.P. Huang, M.T. Asaki, S. Backus, M.M. Murnane, and H.C. Kapteyn, 17-fs pulses from a self-mode-locked Ti:sapphire laser, Opt. Lett. 17, 1298 (1992); B. Proctor and F. Wise, Opt. Lett., 17,1295(1992).
[ 8] W. Denk, D.W. Piston, and W.W. Web, Chap. 28, Handbook of Biological Confocal Microscopy, edited by J.B. Pawley, Plenum Press, New York, 1995.
[ 9] W. Denk, J.H. Strickler, and W.W. Webb, Science, 248, 73 (1990).
[10] 黃茂闊,高甫仁,雙光子共焦掃描顯微系統的特性與應用,科儀新知, 112, 第二十一卷,第二期, 56 (1999).
[11] James B. Pawley, Handbook of Biological Confocal Microscopy (Plenum Press, New York, 1995).
[12] Olympus Manual, MX50-CF,Real-time Confocal Microscope.
[13] J.Quincke,E.Plies,and J.Otto, Circuit analysis in Ics using the scanning laser microscope, SPIE ,Vol.1028 Scanning Imaging, P211~216(1988).
[14] Hirotaka Komoda and Katsusuke Shimizu, Optical Beam Induced Current Techniques for Failure Analysis of Very Large Scale Integrated Circuits Devices, Jpn. J. Appl. Phys., Part1, Vol.33,P3393~3401(1994).
[15] J.Fritz,R.Lackmann,and B.Rix, An Automated Latch-up Measurement System Using a Laser Scanning Microscope, SPIE, Vol.1028 Scanning Imaging, P217~223(1988).
[16] 張樂融“中山大學物研所碩士論文” 1997
[17] H.Kanie N.Tsukamoto H.Koami ,Journal of Crystal Growth
189,52(1998)
[18] 西澤 潤一 “發光二極體” 1988
[19] 馮明憲,郭政達,林其淵”藍光發光基材-氮化鎵半導體之研究開發”,電子月刊第一卷第三期,Oct 1995.
[20] Shuji Nakamura,Gerhard Fasol,The Blue Laser
Diode,ISBN3-540-61590-3.
[21] 李威儀, “從非主流到主流-三五族氮化物與中村賢二崛起的故事”物理雙月刊二十卷二期, P245~257.
[22] S.N.Mohammad,Arnel A.Salvador, and Hadis Morkoc, “Emerging
Gallium Nitride Based Devices”,Proceedings of the IEEE, Vol.83,NO.10, P1306~1355(1995).
[23] S. Chichibu, T. Azuhata, T. Sota, S. Nakamura, Spontaneous emission of localized excitons in InGaN single and multiquantum well structures, Appl. Phys. Lett, 69, 4188 (1997).
[24] S. Chichibu, T. Azuhata, T. Sota, S. Nakamura, Luminescences from localized states in InGaN epilayers, Appl. Phys. Lett, 70, 2822 (1997).
[25] Y. Narukawa, Y. Kawakami, M. Funato, Sz. Fujita, Sg. Fujita, and S. Nakamura, Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm, Appl. Phys.Lett., 70, 981 (1997).
[26] Y. Narukawa, Y. Kawakami, Sz. Fujita, Sg. Fujita, and S. Nakamura, Recombination dynamics of localized excitons in In0.20Ga0.80N-In0.05Ga0.95N multiple quantum wells, Phys. Rev. ,B55, 1938R (1997).
[27] S. Chichibu, K. Wada, S. Nakamura, Spatially resolved cathodoluminescence spectra of InGaN quantum wells, Appl. Phys. Lett., 71, 2346 (1997).
[28] Fu-Jen Kao, Mao-Kuo Huang, Yung-Shun Wang,Sheng-Lung Huang, Ming-Kuei Lee, and Chi- Kuang Sun, Two-photon optical-beam-induced current imaging of indium gallium nitride blue light-emitting diodes, Opt. Lett.,24, 1407(1999).
[29] 金仁初 科儀新知 第十五卷 第三期“CCD 電荷耦合原件偵測器簡介”
[30] 廖俊男,“InGaN/GaN多層膜之顯微光譜”,國立中山大學物理研
究所碩士論文,(1998)
[31] Jacques I.Pankove,”Optical Processes in Semiconductors”,
Dover Publications,Inc. New York (1975)

參考文獻

[ 1] T. Yamazaki,I. Komuro,and Y. Yazaki,J. Mol. Cell Cardiol. 27,133 (1995).
[ 2] T. Wilson and C. J. R. Sheppard, Theory and practice of scanning optical microscopy, (Academic Press, London, 1984).
[ 3] C.J.R. Sheppard and D.M. Shotton, Confocal Laser Scanning Microscopy, Springer, New York,(1997).
[ 4] M. Gu, Three dimensional confocal microscopy, (World Scientific, Singapore, 1996).
[ 5] M. Born and E. Wolf, Principles of Optics (Pergamon Press, Oxford, 1980).
[ 6] M. Göppert-Mayer, Ueber Elementarakte mit zwei Quantenspruengen, Ann. Phys. 9,273(1931).
[ 7] D.E. Spence, P. N. Kean, and W. Sibbett, 60-fsec pulse generation from a self-mode-locked Ti:sapphire laser, Opt. Lett. 16, 42 (1991); C.P. Huang, H.C. Kapteyn, J.W. McIntosh, and M.M. Murnane, Generation of transform-limited 32-fs pulses from a self-mode-locked Ti:sapphire laser, Opt. Lett. 17, 139 (1992); C.P. Huang, M.T. Asaki, S. Backus, M.M. Murnane, and H.C. Kapteyn, 17-fs pulses from a self-mode-locked Ti:sapphire laser, Opt. Lett. 17, 1298 (1992); B. Proctor and F. Wise, Opt. Lett., 17,1295(1992).
[ 8] W. Denk, D.W. Piston, and W.W. Web, Chap. 28, Handbook of Biological Confocal Microscopy, edited by J.B. Pawley, Plenum Press, New York, 1995.
[ 9] W. Denk, J.H. Strickler, and W.W. Webb, Science, 248, 73 (1990).
[10] 黃茂闊,高甫仁,雙光子共焦掃描顯微系統的特性與應用,科儀新知, 112, 第二十一卷,第二期, 56 (1999).
[11] James B. Pawley, Handbook of Biological Confocal Microscopy (Plenum Press, New York, 1995).
[12] Olympus Manual, MX50-CF,Real-time Confocal Microscope.
[13] J.Quincke,E.Plies,and J.Otto, Circuit analysis in Ics using the scanning laser microscope, SPIE ,Vol.1028 Scanning Imaging, P211~216(1988).
[14] Hirotaka Komoda and Katsusuke Shimizu, Optical Beam Induced Current Techniques for Failure Analysis of Very Large Scale Integrated Circuits Devices, Jpn. J. Appl. Phys., Part1, Vol.33,P3393~3401(1994).
[15] J.Fritz,R.Lackmann,and B.Rix, An Automated Latch-up Measurement System Using a Laser Scanning Microscope, SPIE, Vol.1028 Scanning Imaging, P217~223(1988).
[16] 張樂融“中山大學物研所碩士論文” 1997
[17] H.Kanie N.Tsukamoto H.Koami ,Journal of Crystal Growth
189,52(1998)
[18] 西澤 潤一 “發光二極體” 1988
[19] 馮明憲,郭政達,林其淵”藍光發光基材-氮化鎵半導體之研究開發”,電子月刊第一卷第三期,Oct 1995.
[20] Shuji Nakamura,Gerhard Fasol,The Blue Laser
Diode,ISBN3-540-61590-3.
[21] 李威儀, “從非主流到主流-三五族氮化物與中村賢二崛起的故事”物理雙月刊二十卷二期, P245~257.
[22] S.N.Mohammad,Arnel A.Salvador, and Hadis Morkoc, “Emerging
Gallium Nitride Based Devices”,Proceedings of the IEEE, Vol.83,NO.10, P1306~1355(1995).
[23] S. Chichibu, T. Azuhata, T. Sota, S. Nakamura, Spontaneous emission of localized excitons in InGaN single and multiquantum well structures, Appl. Phys. Lett, 69, 4188 (1997).
[24] S. Chichibu, T. Azuhata, T. Sota, S. Nakamura, Luminescences from localized states in InGaN epilayers, Appl. Phys. Lett, 70, 2822 (1997).
[25] Y. Narukawa, Y. Kawakami, M. Funato, Sz. Fujita, Sg. Fujita, and S. Nakamura, Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm, Appl. Phys.Lett., 70, 981 (1997).
[26] Y. Narukawa, Y. Kawakami, Sz. Fujita, Sg. Fujita, and S. Nakamura, Recombination dynamics of localized excitons in In0.20Ga0.80N-In0.05Ga0.95N multiple quantum wells, Phys. Rev. ,B55, 1938R (1997).
[27] S. Chichibu, K. Wada, S. Nakamura, Spatially resolved cathodoluminescence spectra of InGaN quantum wells, Appl. Phys. Lett., 71, 2346 (1997).
[28] Fu-Jen Kao, Mao-Kuo Huang, Yung-Shun Wang,Sheng-Lung Huang, Ming-Kuei Lee, and Chi- Kuang Sun, Two-photon optical-beam-induced current imaging of indium gallium nitride blue light-emitting diodes, Opt. Lett.,24, 1407(1999).
[29] 金仁初 科儀新知 第十五卷 第三期“CCD 電荷耦合原件偵測器簡介”
[30] 廖俊男,“InGaN/GaN多層膜之顯微光譜”,國立中山大學物理研
究所碩士論文,(1998)
[31] Jacques I.Pankove,”Optical Processes in Semiconductors”,
Dover Publications,Inc. New York (1975)