在本論文中，我們利用有機金屬化學氣相沈積法在藍寶石基板上成長無摻雜氮化鎵薄膜和矽摻雜氮化鎵薄膜。我們以調整氫氣流量及氮化時間來探討對無摻雜氮化鎵薄膜之影響。以及探討升溫速率、Si2H6流量大小和無摻雜氮化鎵薄膜厚度對矽摻雜氮化鎵之影響。在無摻雜氮化鎵實驗裡，當氫氣量加大時，會減少碳的污染，使薄膜特性變好。氮化時間太長或太短會使薄膜特性變差。在矽摻雜氮化鎵實驗中，升溫速率太快或太慢都會使薄膜特性變差。Si2H6流量和載子濃度成很好線性關係，Si2H6流量達到7.19nmol/min後，電子移動率不會再增加。在成長矽摻雜氮化鎵之前預成長無摻雜氮化鎵薄膜會改善矽摻雜氮化鎵結晶品質，而且會影響矽摻雜氮化鎵的光特性例如PL光譜。

In this thesis, we grew undoped GaN and Si-doped GaN films on sapphire by metal organic chemical vapor deposition (MOCVD) system. For the purpose to investigate the influences of undoped GaN films, we modulated H2 gas flow rate and nitridation time in the undoped GaN growth conditions. The ramping rate, Si2H6 flow rate and undoped GaN film thickness were varied to study the influences on Si-doped GaN films. When H2 gas flow rate was increased, it led to carbon pollution reduced and improved films quality. Too long or too short nitridation time would change film qulity seriously. In the Si-doped GaN films growth, the films quality become worse when the ramping rate was too quick or too slow. The relationship between the carrier concentration of Si-doped GaN films and Si2H6 flow rate was linear. The electron mobility of Si-doped films will not increase apparently until Si2H6 flow rate up to 7.19nmol/min . Undoped GaN film which was pregrown before Si-doped GaN could improve the crystal quality of Si-doped GaN films, and it will influence the optical properties of Si-doped GaN film, such as PL spectra.

第一章 簡介………………………………………………………1
1.1 以MOCVD成長氮化鎵之基本化學反應………………… 2
1.2 Buffer layer的作…….……………………………… 2
1.3 N型摻雜GaN………………………………………………3
1.4 P型摻雜GaN………………………………………………3
第二章 MOCVD系統與量測設備………………………………… 4
2.1 有機金屬化學氣相沉積系統………………………… 7
2.2 PL（Photoluminescence）…………………………… 9
2.3 MOCVD系統自動化程式………………………………… 10
2.4 薄膜厚度量測設備………………………………………11
第三章 以MOCVD成長無摻雜氮化鎵…………………………… 23
3.1 基板準備……………………………………………… 23
3.2 氫氣實驗磊晶流程…………………………………… 25
3.3 結果與討論…………………………………………… 25
3.4 氮化實驗磊晶流程…………………………………… 28
3.5 結果與討論…………………………………………… 28
第四章 以MOCVD成長N型摻雜氮化鎵………………………… 41
4.1 基板準備……………………………………………… 41
4.2 無摻雜GaN上長N型GaN實驗磊晶流程………………… 42
4.3 結果與討論…………………………………………… 42
4.4 升溫速率對N型GaN的影響實驗磊晶流程…………… 45
4.5 結果與討論…………………………………………… 46
4.6 N型GaN成長實驗磊晶流程…………………………… 47
4.7 結果與討論…………………………………………… 47
第五章 結論…………………………………………………… 60
參考資料 ………………………………………………………… 59

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