摘要
此篇論文中是以分子束磊晶技術成長砷化合物摻雜層，分為均勻摻雜與調變摻雜(modulation doping)異質接面兩種結構，並利用自製簡單霍爾量測機台做移動率和載子濃度的量測。而金屬與半導體的歐姆接觸和半導體表層摻雜度有相當大的關係，因此此篇論文也包括歐姆接觸的研究，而此實驗是以兩道TLM光罩的製程在砷化銦鎵摻雜層上進行。
在均勻摻雜實驗方面，實驗結果與文獻中的經驗值比較起來屬相當合理，此實驗結果將可作為本實驗室分子束磊晶機台的參考依據。砷化鎵/砷化鋁鎵調變摻雜異質接面結構實驗方面，利用液氮冷卻樣品的方法使樣品溫度處於約170K作量測，電子移動率可達27000[cm2/(V•s)]，此結果從文獻中做比較已屬相當不錯。在P型歐姆接觸實驗中以鉻(Cr)+鋅(Zn)+金(Au)和鉻(Cr)+鋅(Zn)+鉻(Cr)+金(Au)兩種金屬層組合做比較時，鉻(Cr)+鋅(Zn)+鉻(Cr)+金(Au)此種金屬層組合在360℃可得最低的特徵接觸電阻3.38×10-6(ohm•cm2)，而在N型歐姆接觸實驗中本實驗所採用的金屬層組合為金(Au)+鍺(Ge)+金(Au)，此金屬層組合在尚未回火時即可得到最小的特徵接觸電阻值9.75×10-7(ohm•cm2)，而在文獻中此P型和N型的歐姆接觸結果皆屬相當好的歐姆接觸。

Abstract
The theme of this thesis is the MBE growth of doped arsenide compound semiconductor layers including uniformly doped layers and a modulation-doped heterostructure. The Hall measurement system has been set up to measure the carrier concentration and mobility of these samples. We have also studied the ohmic contacts on epitaxial InGaAs layers by TLM method.
For uniformly doped samples, the experimental relation between doping concentration and MBE cell temperature have been established, and are in good agreement with reported results. In the experiment on GaAs/AlGaAs modulation-doped heterostructure, an electron mobility of 27000[cm2/(V•s)] was obtained by cooling the sample down to 170K with liquid nitrogen. This result is consistent with published results. For P-type ohmic contacts on InGaAs, a comparison between two metal layer compositions of Cr+Zn+Au and Cr+Zn+Cr+Au was made. The Cr+Zn+Cr+Au layer gave a lowest specific contact resistance of 3.38×10-6(ohm•cm2) at an annealing temperature of 360℃. A N-type ohmic contact of Au+Ge+Au was also investigated. This metal layer has a lowest specific contact resistance of 9.75×10-7(ohm•cm2) without annealing.

目錄

第一章 簡介 1
1-1前言 1
1-2大綱 1
第二章 實驗原理 3
2-1分子束磊晶技術原理 3
2-2摻雜材料介紹 4
2-2-1 N型雜質 4
2-2-2 P型雜質 5
2-3均勻摻雜與調變摻雜異質接面結構原理 8
2-3-1均勻摻雜 8
2-3-1調變摻雜異質接面結構 9
2-4霍爾量測原理 11
2-4-1霍爾原理 11
2-4-2 van der Pauw量測 13
2-5歐姆接觸原理 15
2-5-1歐姆接觸基本原理 15
2-5-2 TLM量測方法 19
第三章 實驗方法 23
3-1均均摻雜與調變摻雜異質接面結構製作方法 23
3-2 TLM製程步驟 28
第四章 實驗結果與討論 34
4-1均勻摻雜與調變摻雜異質接面結構實驗結果與討論34
4-1-1均勻摻雜量測結果與討論 34
4-1-2調變摻雜異質接面結構量測結果與討論 40
4-2歐姆接觸實驗結果與討論 44
4-2-1 P型歐姆接觸量測結果與討論 44
4-2-2 N型歐姆接觸量測結果與討論 57
第五章 結論 65
參考文獻 67
附錄1：霍爾量測機台架設 69
附錄2：霍爾量測機台操作程序與注意事項 72
附錄3：自製霍爾量測機台計算程式(mathcad) 76

[1] L. Pfeiffer, K. W. West, H. L. Stormer, and K. W. Baldwin, Appl. Phys. Lett. 55, 18 (1989).
[2] E. Fred Schubert, Doping in Ⅲ-Ⅴ semiconductors, Cambridge University Press, 1993.
[3] R. Dingle, H. L. Stormer, A. C. Gossard, and W. Wiegmann, Appl. Phys. Lett. 33, 665 (1978).
[4] H. L. Stormer, R. Dingle, A. C. Gossard, and W. Wiegmann, in Inst. Phys. Conf. Ser. 43, ed. B. L. Wilson, 1978, p. 557.
[5] H. L. Stormer, R. Dingle, A. C. Gossard, and W. Wiegmann, and M. D. Sturge, Solid State Commun., 29, 705 (1979).
[6] D. K. Schroder, Semiconductor Material and Device Characterization, A Wiley-Interscience Publication, 1998, Ch. 8.
[7] F. A. Padovani, in semiconductors and Semimetals, Vol. 7A, R. K. Willardson and A. C. Beer, editors. New York: Academic Press, 1971, p. 7.
[8] C. B. Duke, J. Vac. Sci. Technol., 7, 22 (1970).
[9] S. M. Sze, Physics of Semiconductor Devices. New York: Wiley, 1981.
[10] R. E. Williams, Gallium Arsenide Processing Techniques, Artech
House, Inc., 1984, Ch. 11.
[11] H. H. Berger, Solid-State Electronics, 15, 844 (1972).
[12] A. Y. Cho, in The Technology and Physics of Molecular Beam Epitaxy, edited by E. H. C. Parker, Plenum Press, New York, 1985, pp. 1-13.
[13] Y. G. Chai, Appl. Phys. Lett. 37, 4 (1980).
[14] C. Hilsum, Electron Lett. 10, 259 (1974).
[15] M. Ilegems, Journal of Applied Physics, 48, 3 (1977).
[16] D. L. Rode, in Semiconductors and Semimetals 10, eds. R. K.
Willardson and A. C. Beer, Academic Press, New York, 1975, Ch. 1.