本論文旨在以本實驗室之分子束磊晶（MBE）系統，在InP基板上成長TE極化與極化不敏感之半導體光放大器磊晶片，前者適合於製作發射端之光放大器與雷射，後者適合於製作中途及接收端之光放大器。我們以晶格匹配之InAl(1)As、InGa(1)Al(2)As（1.24

The work of this thesis includes the growth of TE polarization and polarization insensitive semiconductor optical amplifier structures by molecular beam epitaxy. The former is suited to fabricate the SOA and laser of the emitter, the latter is suited to fabricate the SOA of the repeater and receiver. The materials of InAl(1)As, InGa(1)Al(2)As and InGa(2)As were used to be the cladding layer, SCH layer and quantum well(QW), respectively.
The first kind of our SOA structures is for 1.55-μm TE polarization. The materials of InGa(1)As and InGa(2)As were used to be QW and sub-well, respectively. The second kind of our SOA structures is for 1.55-μm polarization insensitive. To get polarization insensitive characteristics we use tensile strained InGa(3)As material and add two very thin compressive strain layers, InGa(1)As, in QWs to be sub-wells to mostly confine hh1 state. It has the effect of reducing red shift on the e1-hh1 transition and help to partially balance the strain in QW before the thickness of the tensile strained InGa(3)As exceeds one half of the critical layer thickness. These two kinds of structures include three QWs with modulation doping. It can reduce transparency current and noise figure and increase the saturation output power of SOA with the n-type modulation doping.
We had successfully grown the polarization insensitive SOA structure for 1.52-μm. The wavelength of TE polarization SOA structures we grew were at 1.45(µm) and 1.47(µm) and there were somewhat differences between the designed and grown. We can increase the PL efficiency after rapid thermal annealing at 550℃ for 30(s)~45(s).

第一章 簡介………………………………………………………… ...1
1-1前言………………………………………………………..1
1-2半導體光放大器種類……………………………………..3
1-3半導體光放大器的應用…………………………………..5
1-4論文架構…………………………………………………..6

第二章 基板概念與原理………………………………………………7
2-1半導體光放大器基本概念……………………………….7
2-1-1光放大器增益及輸出飽和功率……………………7
2-1-2光放大器雜訊………………………………………8
2-1-3半導體光放大器元件特性…………………………9
2-2應變之基本概念…………………………………………11
2-2-1應變的產生………………………………………..11
2-2-2應變的種類及特性………………………………..12
2-3 調變摻雜………………………………………………...15

第三章 半導體光放大器結構與設計………………………………..17
3-1 材料的選擇……………………………………………...17
3-2量子井結構與設計………………………………………19
3-2-1 TE極化半導體光放大器結構……………………19
3-2-2極化不敏感半導體光放大器結構………………..25
3-2-3模擬量子井混合(QW intermixing)之結構設計….28


第四章 實驗原理與方法……………………………………………..30
4-1分子束磊晶原理…………………………………………30
4-2 X-Ray繞射原理..………………………………………..33
4-3實驗方法及步驟…………………………………………35
4-3-1材料源流量之量測………………………………..35
4-3-2材料溫度之找尋…………………………………..39
4-3-3半導體光放大器結構成長與量測………………..41

第五章 實驗結果與討論……………………………………………..42
5-1材料源流量………………………………………………42
5-2材料源溫度之尋找………………………………………46
5-3結構成長與量測結果……………………………………53

第六章 結論…………………………………………………………..72

參考文獻………………………………………………………………..74

附錄A MD3QWC之結構配置表……………………….……………..77
附錄B PI3QWC之結構配置表………………………….…………….78
附錄C MD3QWSC之結構配置表……………………….……………79
附錄D PI3QWC之結構配置表………………………….…………….80
附錄E PL光譜量測裝置圖…………………………….………………81

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