||Zinc oxide (ZnO) has higher exiton binding energy (60 meV) and high band gap (~3.4 eV) that can provide efficient ultraviolet (UV) light at room temperature (RT). The easily etched in acids and alkalis that provides the fabrication of small-size ZnO-based devices. Electrodeposition is the growth method that can deposit high quality film and modify the characterizations of film by changing its deposition electrolyte concentration, temperature, and current density.|
Firstly, the ZnO is deposited on n-type Si substrate by electrodeposition by different deposited temperature, electrolyte concentration, and current density. The deposited films contain zinc nitrate, metal Zn, and ZnO while electrodeposited at various deposition parameters. For the deposited film contains only ZnO, no UV light is found measured by macroscopic photoluminescent analysis even annealed at different ambient and temperature. According to previous papers, an ideal UV light intensity can be obtained by thermal treated metal Zn or Zn ion implantation into oxide materials after annealing. Annealing the Zn-ZnO structure formed in 30oC by electrodeposition can observe intense UV light. This method improves the disadvantages of insufficient light intensity and no UV light observation from conventionally electrodeposited ZnO. The variation of UV light wavelength of ZnO oxidized from metal Zn is associated with the quantum-confinement effect that was discussed by previous papers. It is found that the size of ZnO is not small enough to realize the quantum-confinement effect, herein, we suggest that the variation of UV light wavelength is affected by the metal Zn resides in ZnO. Otherwise, the electrodeposition of ZnO is not easily performed on p-type substrate, an aluminum film on the back side of p-type Si can deposit ZnO by smaller potential, and different ZnO nanostructures are obtained by modifying the current density. Recently, different characteristics were found in nano-size noble metal crystals. In this thesis, the porous structure of Au-ZnO and Pt-ZnO were co-deposited by electrodeposition to enhance the photocatalytic activity.
Si is the dominant material in semiconductor technology, but its indirect band gap property makes it not allowed in optoelectronics application. However, since 1990, the visible light is observed from porous Si fabricated by electrochemically etching of Si; though the light mechanism of porous Si is not clear, it can be divided into two parts, the quantum-confinement effect of Si nanocrystals and surface states on porous Si. Porous Si emits efficient visible light, but its light wavelength is readily influence by environment. We developed three methods, electrochemically etching the pre-treated Si substrate, adding chemical solution into electrolyte during etching process, and post-treatment of Si substrate after etching to prevent the emission of porous Si from being affected by environment.