本研究使用化學汽相沉積法(chemical vapor deposition, CVD)，磊晶生長氧化鎵於氮化鋁/藍寶石(AlN/sapphire)基板。本實驗使用氮氣及氧氣分別作為載送氣體及反應氣體，以鎵金屬作為反應源，改變生長溫度、生長時間、生長壓力、氣體流量比的實驗條件，實驗完成後，以掃描式電子顯微鏡(SEM)、X光繞射分析(XRD)、穿透式電子顯微鏡(TEM)、穿透光譜分析、陰極螢光光譜(CL)、霍爾量測(Hall effect measurement)做分析，探討在不同實驗條件下，氧化鎵的微觀形貌、生長方向、晶體結構、發光特性及電性。
本研究主要分為四部份：第一部份研究生長溫度對氧化鎵磊晶的影響。第二部份則以第一部分研究之最佳生長溫度，固定溫度並改變反應時間。第三部份實驗以生長壓力做為改變之實驗參數，第四部份為改變氮氣/氧氣流量比，觀察氧化鎵在不同條件下磊晶生長的情形。
實驗結果在氮化鋁/藍寶石基板上磊晶生長出β-氧化鎵，在生長溫度950℃，生長時間90分鐘，壓力75 torr，氮氣/氧氣比為100 sccm/20 sccm之條件下，得到以(2 ̅01)為優選方向的β–Ga2O3，其膜厚為256 nm，生長速率約為2.84 nm/min，其能隙值約為4.74 eV，此條件下生長的氧化鎵為n-type的半導體材料。

Being a wide bandgap semiconductor material, gallium oxide (Ga2O3) has been prepared by many methods. In this study, gallium oxide was grown on AlN/sapphire single crystal substrate by chemical vapor deposition (CVD), by a reaction of gallium (Ga) and oxygen (O2) mixture. Nitrogen and oxygen were used as carrier gas and reaction gas, respectively. The effect of the growth temperature, time, pressure and flow rate of growth on structure of films has been investigated. The characteristics of Ga2O3, such as surface morphology, crystal structure, orientation of the film, and optical properties were analyzed by scanning electron microscope, x-ray diffractometer, transmission electron microscope, Transmissionphoto spectroscopy, cathodoluminescence, hall effect measurement.
There were four parts in the experiment: Firstly, the temperature of growth process was investigated. Secondly, based on the optimal growth temperature of first part, we adjusted the time of growth process. The third changed parameter of experiment was the pressure of growth process. Finally, regulating the flow rate of ratio of nitrogen and oxygen was examined.
According to the result, Ga2O3 single crystal with (2 ̅01)β–Ga2O3, (4 ̅02)β–Ga2O3, and (6 ̅03)β–Ga2O3 orientations was observed. The thickness of epitaxial film was 256 nm, and the rate of growth was 2.84 nm/min. The β–Ga2O3 was n-type conductivity, and the bandgap was 4.74eV.

論文審定書 i
摘要 ii
Abstract iii
目錄 iv
圖目錄 vi
表目錄 viii
第一章 緒論 1
第二章 文獻回顧與理論基礎 2
2.1 氧化鎵材料(Gallium Oxide,Ga2O3) 2
2-1-1 氧化鎵的結構與基本性質 2
2-1-2 氧化鎵的放光性質 2
2-1-3 氧化鎵的製程及應用 3
2-2 藍寶石(sapphire)的結構與性質 3
2-3 氮化鋁(AlN)的結構與性質 4
2-4 化學汽相沉積法(chemical vapor deposition, CVD) 4
2-5 研究動機 6
第三章 實驗內容 8
3-1 實驗流程 8
3-2 實驗裝置 8
3-2-1 反應氣體輸送裝置 9
3-2-2 加熱反應爐 9
3-2-3 真空抽氣裝置 9
3-3實驗步驟 9
3-3-1 基板前處理 9
3-3-2 反應源製備 9
3-3-3 磊晶生長氧化鎵 10
3-4 分析方法 10
3-4-1 X光繞射分析儀分析 (X-Ray diffraction, XRD) 10
3-4-2 掃描式電子顯微鏡(Scanning Electron Microscope, SEM) 11
3-4-3 穿透式電子顯微鏡 (Transmission Electron Microscope, TEM) 11
3-4-4 穿透光譜分析(Transmissionphoto spectroscopy) 12
3-4-5 陰極螢光光譜分析 (Cathodoluminescence, CL) 12
3-4-6 霍爾效應量測分析(Hall effect measurement) 13
第四章 實驗結果與討論 17
4-1 生長溫度對氧化鎵磊晶的影響 17
4-1-1 X光繞射分析 17
4-1-2 微觀形貌分析 20
4-2 生長時間對氧化鎵磊晶的影響 23
4-2-1 X光繞射分析 23
4-2-2 微觀形貌分析 26
4-3 生長壓力對氧化鎵磊晶的影響 29
4-3-1 X光繞射分析 29
4-3-2 微觀形貌分析 31
4-4 氣體流量比對氧化鎵磊晶的影響 33
4-4-1 X光繞射分析 34
4-4-2 微觀形貌分析 37
4-5 穿透式電子顯微鏡分析(TEM) 40
4-6 穿透光譜分析 42
4-7 陰極螢光光譜分析 (CL) 43
4-8 霍爾量測分析(Hall effect measurement) 46
第五章 結論 48
第六章 參考文獻 49

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