本論文研究以化學汽相沉積法磊晶成長氧化鎵(Gallium Oxide,Ga2O3)於(001）鎵酸鋰（LiGaO2,LGO）基板，本實驗以鎵金屬做為反應源，使用高純度氧氣為反應氣體，氮氣為載流氣體。
本實驗主要可分為四部份：第一部份實驗為探討不同的成長溫度，第二部分為探討在不同的氣體流量下，第三部分為探討不同的成長壓力，第四部分為改變成長的時間，透過不同的實驗條件進而觀察氧化鎵薄膜生長之影響變化。
試片以化學汽相沉積法生長完成後，使用X光繞射儀（XRD）、掃瞄式電子顯微鏡（SEM）、穿透式電子顯微鏡(TEM)、陰極發光光譜(CL)、原子力顯微鏡(AFM)、吸收光譜和霍爾效應(Hall effect)量測分析氧化鎵薄膜其結晶方向與性質、微觀形貌、晶體結構、生長機制、光學性質、表面粗糙度、能隙大小以及載子種類等研究。
研究寬能隙半導體材料氧化鎵薄膜之成長情形，實驗結果在成長溫度為780℃、反應壓力為45torr、氣體流量為O2 / N2為100 / 100 sccm、成長時間為90min時的條件下可獲得較平整的連續氧化鎵(β-Ga2O3)薄膜，其結晶品質亦較優良，且放光性質主要落在紫外光波段，並具有寬能隙值4.93eV，為n型半導體。

In this thesis, we use LiGaO2 (LGO)(001) substrate to grow on epitaxial gallium oxide (Ga2O3) by chemical vapor deposition (CVD). Pure gallium metal is used as reaction source. High purity nitrogen and oxygen are used as carrier gas and reaction gas, respectively.
The experiment has four parts. First, epitaxial gallium oxide growth under various temperatures were investigated. Second, the dependence of growth characteristics in different oxygen partial pressure were investigated. In the third part, the dependence of growth characteristics in different growth pressure were investigated. In last part, the dependence of epitaxial gallium oxide growth time were investigated.
Crystal quality of Ga2O3 was investigated by X-ray diffraction (XRD). The surface morphology and crystal structure were analyzed using Scanning electron microscope (SEM). The growth mechanism were analyzed using transmission electron microscope (TEM). Furthermore, cathodoluminescence (CL), atomic force microscope(AFM), transmissionphoto spectroscopy and hall effect were used to study optical properties, the surface roughness of the materials, energy band gap and carrier type.
The wide bandgap semiconductor material of β-Ga2O3 can be obtained at the growth parameters of 780°C, 45 torr, 100/100 sccm of O2/N2 and 90 minutes. The analytic results of cathodoluminescence showed the luminescence property of ultraviolet emission, and showed the band gap of 4.93 eV. The n-type Ga2O3 films were grown on the LGO substrate.

摘要..................................................................I
Abstract............................................................. II
目錄................................................................III
圖目錄..............................................................IV
表目錄..............................................................VII
第一章 序論........................................................1
第二章 文獻回顧與理論基礎..........................................2
2.1 氧化鎵(Gallium Oxide, Ga2O3)的結構與性質..........................2
2.2 鎵酸鋰（LiGaO2,LGO）的結構與性質.................................4
2.3 薄膜沉積技術（Thin Film Deposition）.................................5
2.4 化學汽相沉積技術(Chemical Vapor Deposition, CVD）....................6
2.4.1化學氣相沉積的種類與比較....................................6
2.4.2化學氣相沉積的反應機制......................................7
2.5 反應器腔體傳輸現象..............................................10
2.5.1反應氣流的流動現象.........................................11
2.5.2反應氣流的擴散與熱擴散現象.................................13
2.6 異質磊晶成長....................................................14
2.7 研究動機........................................................16
第三章 實驗內容...................................................17
3.1 實驗流程........................................................17
3.2 實驗裝置........................................................17
3.3 實驗方法與步驟..................................................18
3.4 分析原理........................................................19
第四章 實驗結果與討論.............................................24
4.1 成長溫度對於氧化鎵磊晶薄膜的影響................................24
4.2 氣體流量對於氧化鎵磊晶薄膜的影響................................29
4.3 成長壓力對於氧化鎵磊晶薄膜的影響................................33
4.4 成長時間對於氧化鎵磊晶薄膜的影響................................36
4.5 X光繞射( X-ray Diffraction, XRD )分析...............................38
4.6 成份分析........................................................40
4.7 穿透式電子顯微鏡( Transmission Electron Microscope, TEM )分析........44
4.8 原子力顯微鏡( Atomic Force Microscope, AFM )分析...................48
4.9 陰極發光光譜( Cathodoluminescence spectrum, CL )分析.................49
4.10 穿透光譜( Transmissionphoto spectroscopy )分析.......................52
4.11 霍爾效應( Hall effect )分析.........................................54
第五章 結論.......................................................57
第六章 參考文獻...................................................58

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