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博碩士論文 etd-0626117-170333 詳細資訊
Title page for etd-0626117-170333
論文名稱
Title
水熱法合成拓樸超導體Cux: Bi2Se3
Synthesis of Topological Superconductor Single Crystal Cux: Bi2Se3 by Hydrothermal Method
系所名稱
Department
畢業學年期
Year, semester
語文別
Language
學位類別
Degree
頁數
Number of pages
78
研究生
Author
指導教授
Advisor
召集委員
Convenor
口試委員
Advisory Committee
口試日期
Date of Exam
2017-07-19
繳交日期
Date of Submission
2017-07-31
關鍵字
Keywords
Bi2Se3、拓樸絕緣體、水熱法、CuxBi2Se3、拓樸超導體
topological superconductor, CuxBi2Se3, hydrothermal method, topological insulator, Bi2Se3
統計
Statistics
本論文已被瀏覽 5712 次,被下載 33
The thesis/dissertation has been browsed 5712 times, has been downloaded 33 times.
中文摘要
CuxBi2Se3為被廣泛研究的拓樸超導體之一,其中Cu嵌入Bi2Se3的凡德瓦爾層對超導性質是相當重要的。本論文研究使用水熱法(Hydrothermal synthesis),將Cu原子摻雜並嵌入拓樸絕緣體Bi2Se3的凡德瓦爾層中,而藉此實驗方法誘導出超導行為之發生。本實驗先使用熔融法(Melt growth)預生長Bi2Se3的單晶塊材,並將其依晶體解理面分成片狀,再搭配水熱法實驗,藉由高溫密閉容器而產生的高壓環境將Cu原子成功嵌入Bi2Se3的層狀結構中,且成功誘發出超導之行為。
本實驗利用X光繞射儀(X-ray diffractometer,XRD)及穿透式電子顯微鏡(Transmission electron microscopy,TEM)分析晶格結構、結晶方向;利用拉曼光譜儀(Raman spectroscopy)分析晶體振動模態;利用能量色散光譜(Energy-dispersive x-ray spectroscopy,EDS)做定性及定量分析;利用X射線光電子能譜儀(X-ray photoelectron spectroscopy,XPS)鑑定Cu的價數;利用超導量子干涉儀(Superconducting quantum interference device,SQUID)分析樣品超導磁化現象。
最終藉由上述的實驗設計與分析結果,確實能透過水熱法將Cu嵌入Bi2Se3單晶的凡德瓦爾層中並觀察到超導現象之發生,其超導轉變溫度約為3.5 K。
Abstract
CuXBi2Se3 is one of the most widely studied topological superconductors(TSC) and the intercalation of Cu for superconductivity is quite important. In this thesis, the hydrothermal synthesis was studied and desired to dope Cu atoms into the van der Waals layers of topological insulator Bi2Se3. Bi2Se3 single crystal was pre-grown by melt growth and then devided into flakes along the cleavage plane. Cu atoms could be intercalated into the layered structure of Bi2Se3 through the high temperature and high pressure environment and the superconductivity behavior was successfully induced by hydrothermal synthesis.
The c-axis lattice constant and lattice structure of the samples were confirmed by XRD and TEM. The vibration mode of phonons was obtained by Raman spectrum. Qualitative and quantitative analysis were observed by EDS. The valence of the Cu was certified by XPS. Superconducting quantum interference device (SQUID) was used to verify the superconducting magnetization and the superconducting transition temperature Tc is about 3.5 K.
目次 Table of Contents
論文審定書 i
摘要 ii
Abstract iii
目錄 iv
圖目錄 vi
表目錄 ix
第一章 序論 1
第二章 文獻回顧與理論基礎 3
2.1拓樸絕緣體(Topological insulator) 3
2.2拓樸超導體(Topological superconductor) 7
2.3 Bi2Se3與CuxBi2Se3的結構與性質 9
2.4熔融生長法(Melt growth method) 12
2.5水熱法(Hydrothermal synthesis) 13
第三章 實驗內容 14
3.1實驗步驟 14
3.2實驗原理 19
3.3量測設備介紹 21
X光繞射儀(X-Ray Diffractometer,XRD) 21
拉曼光譜儀(Raman Spectroscopy) 22
能量色散光譜(Energy-Dispersive X-ray Spectroscopy,EDS) 23
X射線光電子能譜儀 (X-ray photoelectron spectroscopy,XPS) 24
超導量子干涉儀(Superconducting Quantum Interference Device,SQUID) 25
穿透式電子顯微鏡(Transmission Electron Microscopy,TEM) 27
第四章 實驗結果與討論 28
4.1反應溫度與時間對CuxBi2Se3的影響 28
4.2 X光繞射(XRD)分析 29
溶劑:去離子水 29
溶劑:乙二醇/去離子水 33
4.3能量色散光譜(EDS)分析 39
溶劑:去離子水 39
溶劑:乙二醇/去離子水 44
4.4拉曼(Raman)光譜分析 49
溶劑:去離子水 49
溶劑:乙二醇/去離子水 51
4.5 X射線光電子能譜(XPS)分析 53
溶劑:乙二醇/去離子水 53
溶劑:去離子水 56
4.6超導量子干涉儀(SQUID)分析 59
溶劑:去離子水 59
溶劑:乙二醇/去離子水 60
4.7穿透式電子顯微鏡(Transmission Electron Microscopy,TEM)分析 61
第五章 總結 64
第七章 參考文獻 65
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