TlxBi2Te3已被證實具有超導性，根據研究指出TlxBi2Te3屬於p型的拓樸超導體。在本論文中，透過熔融法將IIIA族包含鎵、銦、鉈等元素摻雜到Bi2Te3中，透過X光繞射分析可以得知晶體結構和Bi2Te3相同，且不同的c軸長度也可分析摻雜機制，拉曼光譜可用來分析摻雜原子對聲子震動的影響，透過能量色散光譜可以分析成分組成，而X射線光電子能譜可用來分析各個原子的價數並用來確認摻雜機制，透過超導量子干涉儀可以分析超導性及超導轉變溫度，藉由霍爾效應量測可以得到載子種類及載子濃度。

Superconductivity has been discovered in TlxBi2Te3 material, which belongs to the group of topological insulator p-type Bi2Te3. In this thesis, the different elements including gallium (Ga), indium (In) and thallium (Tl) were doped into Bi2Te3 host material. These materials are grown by Bridgman method. The crystal structure appears to be unchanged from Bi2Te3 with different lattice parameter c, which together with the X-ray Diffraction analysis (XRD), suggests that dopant elements are substitutional or intercalated. The effect on phonon vibration modes of dopant atoms were analyzed by Raman spectrum. The element composition was observed by Energy-Dispersive X-ray Spectroscopy (EDS). The valence and doping mechanism of dopant elements were analyzed by X-ray photoelectron spectroscopy (XPS). The superconducting volume fraction of 2% with Tc of 1.98 K was observed in Tl0.1Bi2Te3 by Superconducting Quantum Interference Device (SQUID). The carrier type and carrier concentration were observed by Hall effect.

摘要 iii
Abstract iv
目錄 v
圖目錄 viii
表目錄 xii
第一章 序論 1
1-1 前言 1
1-2 研究動機與目的 2
第二章 理論基礎與文獻回顧 3
2-1拓樸絕緣體 3
2-2拓樸超導體 7
2-3 Bi2Te3的結構與性質 9
2-4 TlxBi2Te3的結構與性質 12
2-5熔融法 13
第三章 實驗內容 14
3-1實驗步驟 14
3-2 分析儀器介紹 17
3-2-1 X光粉末繞射儀（X-Ray Powder Diffractometer） 17
3-2-2 X光繞射分析儀（X-Ray Diffraction，XRD） 18
3-2-3能量色散光譜（Energy-Dispersive X-ray Spectroscopy，EDS） 19
3-2-4 拉曼光譜分析（Raman） 20
3-2-5 X射線光電子能譜（X-ray photoelectron spectroscopy，XPS） 21
3-2-6 超導量子干涉儀（Superconducting Quantum Interference Device，SQUID） 22
3-2-7 霍爾效應 (Hall effect) 25
第四章 實驗結果與討論 26
4-1粉末繞射分析（X-Ray Powder Diffraction） 27
1. GaxBi2Te3： 27
2. InxBi2Te3： 29
3. TlxBi2Te3： 30
4-2高解析XRD分析（High Resolution X-ray Diffraction，HRXRD） 33
1. GaxBi2Te3： 34
2. InxBi2Te3： 36
3. TlxBi2Te3： 38
4-3能量色散光譜（Energy-Dispersive X-ray Spectroscopy）分析 44
1. GaxBi2Te3 44
2. InxBi2Te3 48
3. TlxBi2Te3 51
4-4拉曼(Raman)光譜分析 55
1. GaxBi2Te3： 56
2. InxBi2Te3 57
3. TlxBi2Te3 58
4-5 X射線光電子能譜(XPS)分析 60
1.GaxBi2Te3 60
2. InxBi2Te3 62
3. TlxBi2Te3 64
4-6 超導量子干涉儀(SQUID)分析 67
4-7 霍爾效應量測分析 73
1. Bi2Te3 73
2. Tl0.1Bi2Te3 74
3. Tl0.2Bi2Te3 75
第五章 結論 76
第六章 參考文獻 78

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