本研究之主要目的為以分子束磊晶的方法，應用I-III-VI2族三元黃銅礦(Chalcopyrite)半導體材料，在仔細控制磊晶之成長參數之下，以達到成長各種高品質的磊晶層。

我們使用分子束磊晶的方法沉積CuInSe2，經由成長參數的調變，可以控制二硒化銅銦(CuInSe2)的組成並且達到成長晶膜的高重製性 (reproducibility)目的。在固定銅分子束流量及硒分子束過量的條件下，藉由變化銦分子束流量的強度來調變In/Cu比，以得到化學計量組成(stoichiometric)和In-rich或Cu-rich的晶膜，轉而應用在太陽電池的製作，並以得到高轉換效率為目標。

The dominant research subjects are focused on the growth of high quality stoichiometric undoped CuInSe2 epitaxial films by molecular beam epitaxial growth.

For MBE growth, it is possible to obtain the high quality epitaxial films and to get the reproducibility and stability of the composition and properties of epilayers by controlling the growth parameters carefully. Under the conditions of fixed Cu molecular beam flux and excess Se molecular beam flux, we can control the In/Cu compositon ratio by changing In molecular beam flux to get stoichiometric and In-rich or Cu-rich epitaxial films. We hope it can be used in the manufacture of solar cell and get high conversion efficiency.

第一章 簡 介……………………………………1
1-1 前言………………………………………… 1
1-1-1發展太陽電池的目的………………………1
1-1-2 太陽電池之應用…………………… ……2
1-2 CuInSe2 的晶體結構與材料特性…… ……2
1-2-1 CuInSe2的晶體結構………………………2
1-2-2 CuInSe2的材料參數……………………..3
1-2-3 CuInSe2材料的特性………………………5
1-3 CuInSe2 的成長技術……………………….6
1-4 以MBE成長CuInSe2薄膜……………………13
第二章 實驗設備與步驟……………………….15
2-1 分子束磊晶成長設備………………………15
2-2 分子束磊晶成長實驗步驟…………………16
2-3 材料分析……………………………………18
2-3-1 X-Ray 繞射分析…………………………18
2-3-2 霍爾效應…………………………………20
第三章 理論模型……………………………….21
3-1 分子束磊晶成長CuInSe2化學反應模型….21
3-1-1 基本關係式………………………………21
3-1-2 將模型應用在CuInSe2……….…………23
3-2 CuInSe2-I2成長熱力學……………………25
3-2-1 熱力學分析步驟…………………………26
3-3 CuGaSe2-I2系統的熱力學分析……………29
第四章 結果與討論…………………………….31
4-1 組成控制……………………………………31
4-2 結晶特性……………………………………33
4-3 表面型態……………………………………34
4-4 電性…………………………………………34
4-5 熱力學模型的計算結果……………………35
4-6 CuGaSe2…………………………………….35
第五章 結論…………………………………….39
參考文獻…………………………………………82

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