中文摘要
電光探測技術近年來發展得十分迅速，電光探測技術對於半導體元件和電路的特性分析如反應時間，延遲時間，散射參數的取得方面，已證明是一個有效的量測工具。一些較先進的電光探測技術不但可以量測出電場的強度，還能夠進一步量測出電場的方向性，而得到電場的向量。電場向量對於射頻電路之傳輸線和片型天線等元件均能提供極有價值的資訊，利用此技術，可得出待測元件近場電場各分量的強度分布。但目前對於水平二維電場電光探測技術一次只能量測一維方向，因此在量測二維向量電場時先量其中的一維分量，再將待測元件轉90°來量測另一維分量；然而，這樣的步驟不僅會造成量測的誤差，且量測的時間倍增，造成其實用化上的障礙；在本論文中同時利用兩種電光調變方式，可量測二維向量電場而不須轉動待測元件。因此，此技術可降低量測所需時間並提升精確度，同時可改善對不同方向電場的量測靈敏度。
此外在本論文中亦提出一種以外差（heterodyne）原理來量測高頻近場二維電場分佈。利用此原理，量測系統可使用連續波(CW)雷射取代脈衝雷射，使系統的成本大大降低，提高技術的應用價值。

英文摘要
Electro-optic probing techniques are advancing rapidly in recent years. These techniques have been proven to be an effective tool in parameter extraction of semiconductor devices such as response time, delay time as well as scattering parameters. Not only the magnitude of the electric field but also the direction of the corresponding E-field direction are measured in several developed electro-optic probing system. By incorporated these techniques, the near-field electric field vectors can be estimated and they are valuable information for the analysis of RF circuit devices, e.g., micro-strip transmission line, patch antenna, etc. When probing the 2-D E-field vectors, one can only measure 1-D E-field direction, then rotate the device under test by 90° for another orthogonal tangential E-field direction. However the process not only reduces the probing accuracy but also increases the time interval for achieving measurement and lead to obstacles in use.
In the thesis, 2D E-field can be obtained without rotating the DUT by using two kinds of modulation schemes, i.e., compressed/stretched deformation modulation(CSDM) and rotational deformation modulation(RDM). These novel techniques provide a total solution for the above bottleneck and improve the sensitivity for different E-field direction. Besides, a heterodyne method is developed to measure the high frequency near-field 2D E-field distribution. By the heterodyne method, the EO probing system can incorporate the CW laser instead of the pulse laser for reducing the cost and enhancing the merits when applied.

目錄
中文摘要 Ⅰ
英文摘要 Ⅱ
目錄 Ⅲ
圖表目錄 Ⅳ
第一章 導論 1
第二章 理論背景分析 4
2.1 平面波於非等向性晶體中的傳播 4
2.2 折射率橢圓球 6
2.3 晶體之分類及光在單光軸晶體內行進之方式 8
2.4 線性電光效應 12
2.5 晶體於外加電場時所產生之固有波 15

第三章 電光探測技術 17
3.1 縱向電光振幅調變 17
3.2 橫向電光振幅調變 20

第四章 二維高頻向量電場探測技術 22
4.1高反射鍍膜探針操作原理 22
4.2全內部反射探針操作原理 24
4.3量測結果 26

第五章 外差法原理應用於連續波雷射高頻訊號量測 30
5.1 外調式外差法實驗架構及量測結果 30
5.2 直調式外差法實驗架構及量測結果 31

第六章 結論 37

參考文獻 38
中英文對照表 40
附錄 41

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