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博碩士論文 etd-0627101-132136 詳細資訊
Title page for etd-0627101-132136
論文名稱
Title
以低壓有機金屬氣相沈積法成長硫硒化鋅三元化合物並研製銦錫氧化物金屬接觸
ITO Ohmic Contact on Ternary ZnSxSe1-x Epilayers Prepared by LP-OMVPE
系所名稱
Department
畢業學年期
Year, semester
語文別
Language
學位類別
Degree
頁數
Number of pages
122
研究生
Author
指導教授
Advisor
召集委員
Convenor
口試委員
Advisory Committee
口試日期
Date of Exam
2001-06-22
繳交日期
Date of Submission
2001-06-27
關鍵字
Keywords
銦錫氧化物、硫硒化鋅、低壓有機金屬化學氣相沉積法
ITO, LP-OMVPE, ZnSSe
統計
Statistics
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The thesis/dissertation has been browsed 5729 times, has been downloaded 26 times.
中文摘要
中文摘要
高品質且與砷化鎵基板晶格常數匹配的ZnS0.06Se0.94磊晶層已經被成功地製造,使用EPMA檢測出硫的含量為0.06,X光分析可知其半高寬為187.2 arcsec,R-value為5.191%。
高品質且與砷化鎵基板晶格常數匹配的ZnS0.06Se0.94:N磊晶層已經被成功地製造,X光分析可知其半高寬為169.2 arcsec,R-value為3.521%。
銦錫氧化物由熱蒸著銦錫合金後再行氧氣回火處理後獲得,導電度與透明度皆妥協於可接受的範圍。在ITO/ZnS0.06Se0.94:N結構上,因為電流與電壓曲線顯示最低電阻值,所以將氧氣回火的最佳化溫度與時間定為450℃與60分鐘;在ITO/Glass結構上,因為絕佳的穿透率與導電度,所以將氧氣回火的最佳化溫度與時間定為650℃與60分鐘。
成為硒化鋅藍光發光二極體中卓越的歐姆接觸有以下的要求:(1)透明度;(2)低阻值;(3)方便黏著;(4)低熔點。對第一項來說,透明又導電的銦錫氧化物是唯一的好選擇。
這篇論文中,ITO/ZnS0.06Se0.94:Cl/ZnSe/ZnS0.06Se0.94:N/GaAs:Zn/Au-Zn雙異質接面結構再經由In-Sn/ZnS0.06Se0.94:Cl/ZnSe/ZnS0.06Se0.94:N/GaAs:Zn/Au-Zn氧氣回火後已獲得,由電流與電壓曲線顯示為二極體電流特性。
Abstract
ABSTRACT
High quality ZnS0.06Se0.94 epilayer which was lattice-matched to GaAs substrate has been prepared. The sulfur composition x was 0.06 has been determined by EPMA. The FWHM of X-ray diffraction was 187.2 arcsec. Its R-value was 5.191%.
High quality ZnS0.06Se0.94:N epilayer which was lattice-matched to GaAs substrate has been prepared. The FWHM of X-ray diffraction was 169.2 arcsec. Its R-value was 3.521%.
ITO film formed by thermal evaporated In-Sn alloy first, then annealing in O2 atmosphere. The conductivity and transparency of ITO have been trade-off at acceptable parameter. Because of the highest current in I-V characteristic in the structure of ITO/ZnS0.06Se0.94:N, we optimized the annealing temperature and time at 450℃ for 60min in O2 atmosphere. Because of the excellent transparency and conductivity in the structure of ITO/Glass, we optimized the annealing temperature and time at 650℃ for 60min in O2 atmosphere.
The requirements for an excellent ohmic contact for ZnSe-based blue LED are: (1) transparent (2) low contact resistance (3) good for bonding (4) low melting point. For (1), Tin-doped indium oxide (ITO) is the only good choice.
In this study, ITO/ZnS0.06Se0.94:Cl/ZnSe/ZnS0.06Se0.94:N/GaAs:Zn/Au-Zn double heterojunction (DH) structure has been prepared after annealing In-Sn/ZnS0.06Se0.94:Cl/ZnSe/ZnS0.06Se0.94:N/GaAs:Zn/Au-Zn in O2 atmosphere. I-V characteristic of DH junction structure shows a diode electric property.
目次 Table of Contents
CONTENTS
LIST OF FIGURES I
LIST OF TABLES V

1. INTRODUCTION 1
1-1 Applications from Blue to Ultraviolet Light Emitting Devices 1
1-2 Promising Materials for Blue LEDs 2
1-2-1 SiC-based Blue LEDs 2
1-2-2 GaN-based Blue LEDs 3
1-2-3 ZnSe-based Blue LEDs 4
1-2-4 Developments of Organic Light Emitting Diodes 5
1-3 Developments of Ⅱ-Ⅵ Blue Light Emitting Devices 6
1-4 Motivations of ZnSe-based Epilayers Growth 7
1-5 Considerations of Substrates 10
1-5-1 Lattice Mismatch Problem 10
1-5-2 Thermal Mismatch Problem 11
1-5-3 Interdiffusion Problem 11
1-5-4 Selections of Substrates 12
1-6 Requirements of Low-Temperature Growth 14
1-7 Thermally Evaporated Transparent Conducting n2O3:Sn Film
for Ohmic Contact 15

2. EXPERIMENTS 17
2-1 OMVPE Growth System 17
2-1-1 Cold Wall System and Single Hot Zone 17
2-1-2 Simplicity, Flexibility and Versatility 18
2-1-3 Halide-Free 18
2-1-4 Stoichiometry Easily Controlled 18
2-1-5 Low Temperature and Low Pressure Growth 19
2-1-6 Capability of Double Heterostructure 19
2-2 Components of OMVPE 20
2-2-1 Design of Growth Reactor 21
2-2-2 Reactant Gases Handling System 21
2-2-3 Heating System 22
2-2-4 Exhaust Disposal System 22
2-2-5 Safety Considerations 23
2-3 Substrate Preparation 23
2-4 ZnSe-based Epilayer Growth Procedures 24
2-5 Quality Evaluations of ZnSxSe1-x Epilayers 25
2-6 Components of Thermal Evaporator 26
2-7 Quality Evaluations of ITO Thin Films 26

3. RESULTS AND DISCUSSION 27
3-1 Growth of Binary ZnSe Epilayers on GaAs by LP-OMVPE 27
3-2.Growth of Ternary ZnSxSe1-x Epilayers on GaAs by LP-OMVPE 27
3-2-1 Epitaxial Growth of Ternary ZnSxSe1-x Epilayers on GaAs
by LP-OMVPE 27
3-2-2 Surface Morphology 31
3-2-3 Uniformity 32
3-2-4 Crystallinity 33
3-2-5 Optical Property 34
3-3 Growth of Doped ZnSxSe1-x Epilayers on GaAs by LP-OMVPE 35
3-3-1 P-type Doping 35
3-3-2 N-type Doping 43
3-4 Deposition of ITO Ohmic Contact 43
3-4-1 ITO on ZnSxSe1-x:N Epilayer 43
3-4-2 ITO on Glass 47
3-5 ITO/ZnS0.06Se0.94:Cl/ZnSe/ZnS0.06Se0.94:N/GaAs:Zn/Au-Zn 48

4. CONCLUSIONS 49
4-1 Growth of Undoped ZnSe and ZnSxSe1-x Epilayers on GaAs
by LP-OVPE 49
4-2 Growth of Doped ZnSxSe1-x Epilayers on GaAs by LP-OMVPE 49
4-3 Deposition of ITO Ohmic Contact 50
4-3-1 ITO on ZnSxSe1-x:N Epilayer 50
4-3-2 ITO on Glass 50
4-4 ITO/ZnS0.06Se0.94:Cl/ZnSe/ZnS0.06Se0.94:N/GaAs:Zn/Au-Zn 50

FIGURES 52
TABLES 114
REFERENCES 118
參考文獻 References
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