本論文研究上發光型有機發光二極體製作，利用高反射金屬Al，搭配其他高功函數金屬，如Pt, Ni, Au等，來作為高反射陽極。Al/Au雙層金屬層作為元件陽極可以有較佳的發光特性。隨後研究Al/Au陽極中Al最佳厚度調整，當Al 70/Au 5 nm時，能夠具有高反射率，且與有機電洞注入層有最佳附著特性，提升發光效能。陰極方面選用多層金屬複合層LiF/Al/Ag作為陰極，同時亦探討其最佳厚度，以兼顧陰極穿透性及導電性。當陰極厚度為LiF0.4/Al 4/Ag 10 nm，可以有50 %的最佳穿透性及不錯的導電性，使發光特性提升。有機層方面研究改變電洞注入層、電洞傳輸層及電子傳輸層三者之間厚度最佳控制，當有機層厚度為m-MTDATA 20/NPB 40/Alq3 60 nm時，可得到最佳發光效率3 cd/A，最高亮度8041 cd/m2。本論文亦研究白光上發光型有機發光二極體製作，利用ADS082BE做為藍光主發光層材料，DCJT為橘光客分子摻雜材料，實驗改變摻雜濃度及摻雜位置，藉而調整藍-橘光發光比例以得到白光，其得到白光CIE色度坐標為(0.30,0.34)，元件最高發光亮度為3739 cd/m2@13.5 V，最佳發光效率為3 cd/A@10 V。另外亦將上發光型OLED製作在矽基板及可撓式基板，得到最高亮度及效率分別為(3894 cd/m2；3.8 cd/A on Si wafer)，(575 cd/m2；1.46 cd/A on PES substrate)。

The top emission organic light-emitting diodes (TEOLEDs) with multilayer electrodes were studied. Firstly a high reflectivity metal, Al, followed by a high work function metal, such as Pt, Ni or Au, was used as bilyaer anode. It was found that the Al/Au bilayer anode can give rise to a very good luminescent performance if the Al thickness in the bilayer was adjusted to 70 nm. The Al/Au bilayer anode has high reflectivity and good adhesive contact with the hole injection layer. Next the cathode in TEOLEDs composed of multiple layers, LiF/Al/Ag, were studied. The optimum thicknesses in each layer as 0.4/4/15 nm were used to achieve high transparency and good conductivity. The effects of thicknesses of each organic layer were also studied. When the optimum thicknesses of m-MTDATA/NPB/Alq3 were adjusted to 20/40/60 nm, the highest brightness and best luminance efficiency of 8041 cd/m2 and 3 cd/A, respectively, were obtained. The white TEOLED was also studied in this thesis. The ADS082BE was blue host-emitting material and DCJT was orange guest-emitting material. The doped concentration and location were adjusted to control the blue to orange luminance intensity ratio. A white emission with CIE coordinate (0.30, 0.34) was obtained. The highest luminance of 3739 cd/m2 @13.5 Vand best luminance efficiency of 3 cd/A@10V were obtained in the white TEOLED which used multilayer anode and cathode structures. Finally TEOLEDs were also fabricated on the Si wafer and flexible substrate. The brightness and luminance efficiency were (3894 cd/m2;3.8 cd/A on Si wafer),(575 cd/m2, 1.46 cd/A on PES substrate).

中文摘要--------------------------------------------------i
英文摘要-------------------------------------------------ii
誌謝----------------------------------------------------iii
表目錄---------------------------------------------------iv
圖目錄----------------------------------------------------v
一、 緒論-------------------------------------------------1
1-1 研究背景與動機--------------- ------------------1
1-2 有機發光二極體簡介-------------------------------3
1-3 有機發光二極體發展歷史與演進---------------------5
二、 有機發光二極體發光原理-------------------------------9
2-1 有機發光二極體發光機制---------------------------9
2-2 有機材料----------------------------------------12
2-3 螢光與磷光--------------------------------------19
2-4 有機發光二極體發光效率--------------------------24
2-5 主動與被動式驅動--------------------------------27
三、 上發光型有機發光二極體-------------------------31
3-1 上發光型有機發光二極體簡介----------------------31
3-2 上發光型有機發光二極體文獻回顧------------------34
3-3 上發光型有機發光二極體微共振腔效應--------------43
四、 實驗方法與步驟--------------------------------------45
4-1 元件基板與預清潔步驟----------------------------45
4-2 元件金屬陽極製作--------------------------------45
4-3 有機元件材料選用及薄膜沉積----------------------46
4-4 元件金屬陰極製作--------------------------------47
4-5 元件封裝----------------------------------------48
4-6 光電特性量測-----------------------------------48
五、 結果與討論------------------------------------------50
5-1 上發光型有機發光二極體陽極結構探討-------------50
5-1-1 研究不同陽極材料製作上發光型OLED----------50
5-1-2 研究Al/Au陽極中改變Al厚度對發光特性影響---51
5-2 上發光型有機發光二極體陰極結構探討--------------53
5-3 上發光型有機發光二極體中HIL與HTL最佳厚度探討----55
5-4 上發光型有機發光二極體中ETL最佳厚度探討--------57
5-5 白光上發光型有機發光二極體研製------------------59
5-6 在矽基板上及可撓式基板上製作上發光型有機發光二極體-----62
5-6-1 在矽基板上製作上發光型有機發光二極體------62
5-6-2 可撓式上發光型有機發光二極體--------------63
六、 結論------------------------------------------------64
參考文獻------------------------------------------------134
附錄----------------------------------------------------139
作者簡歷------------------------------------------------140

[1] P. Pope, H. P. Kallmann, P. Magnant, J. chem. Phys. 38, p. 2042 (1963)
[2] C. W. Tang, S. A.Van Slyke, Appl. Phys. Lett. 51, p. 913 (1987)
[3] C. W. Tang, S. A. Vn Slyke, C. H. Chen, J. Appl. Phys. 65, p. 3610 (1989)
[4] J. H. Burroughes, D. C. Bradley, A. R. Brown, R. N. Marks, K. Mackay, R. H. Friend, P. L. Burn, A. B. Holmes, Nature 347 p. 539 (1990)
[5] J. Kido, M. Matsumoto, Appl. Phys. Lett. 73, p. 2866 (1998)
[6] X. Zhou, M. Pfeiffer, J. Blochwitz, A. Werner, A. Nollau, T. Fritz, K. Leo, Appl. Phys. Lett. 78, p. 410 (2001)
[7] M. A. Baldo, S. Lamansky, P. E. Burrows, M. E. Thompson, S. R. Forrest, Appl. Phys. Lett. 75, p. 4 (1999)
[8] Yuichiro Kawamura, Kenichi Goushi, Jason Brooks, Julie J. Brown, Hiroyuki Sasabe, Chihaya Adachi, Appl. Phys. Lett. 86, p. 071104 (2005)
[9] G. Gu, P. E. Burrows, S. Venkatesh, S. R. Forrest, M. E. Thompson Opt. Lett. 22, p. 172 (1997)
[10] A. B. Chwang, M. A. Rothman, S. Y. Mao, R.. H. Hewitt, M. S. Weaver, J. A. Silvernail, K. Rajan, M. Hack, J. J. Brown, X. Chu, L. Moro, T. Krajewski, N. Rutherford, Appl. Phys. Lett. 83, p. 413 (2003)
[11] K. Lmimouni, C. Legrand, C. Dufour, A. Chapoton, and C. Belouet, Appl. Phys. Lett. 78, 2437 (2001)
[12] S. A. Van Slyke, C. H. Chen, and C. W. Tang, Appl. Phys. Lett. 69, 2160 (1996)
[13] Hyang-Mok Lee, Kang-Hoon Choi, Do-Hoon Hwang, Lee-Mi Do, Taehyoung Zyung, Jong-Woo Lee, and Jung-Ki Park, Appl. Phys. Lett. 72, 2382 (1998)
[14] T. Mori, H. Fujikawa, S. Tokito, and Y. Taga, Appl. Phys. Lett. 73, 2763 (1998)
[15] K. Yamashita, T. Mori, T. Mizutani, T. Miyazki, USP. 5948941
[16] Shizuo Tokito, Hiromitsu Tanaka, Akane Okada, and Yasunori Taga, Appl. Phys. Lett. 69, 878 (1996)
[17] Yasuhiko Shirota, Yoshiyuki Kuwabara, Hiroshi Inada, Takeo Wakimoto, Hitoshi Nakada, Yoshinobu Yonemoto, Shin Kawami, and Kunio Imai, Appl. Phys. Lett. 65, 807 (1994)
[18] N. Hu, S. Xie, B. S. Ong, Z. D. Popovic, A. M. Hor, P. Liu, USP 5891587
[19] Spreitzer, H. 2000年高分子電激發光材料研討會
[20] C. W. Tang, SID at Taipei 2000, 6.
[21] J. Kido, K. Hongawa, K. Okuyama, and K. Nagai, Appl. Phys. Lett. 64, 815 (1994)
[22] Yuji Hamada, Takeshi Sano, Hiroyuki Fujii, Yoshitaka Nishio, Hisakazu Takahashi, and Kenichi Shibata, Appl. Phys. Lett. 71, 3338 (1997)
[23] J. Shi, C. W. Tang, C. H. Chen, USP 5935721
[24] Leonidas C. Palilis, Manabu Uchida, and Zakya H. Kafafi, IEEE. J. Select. Topics. Quantum. Electron, 10, 79, (2004)
[25] C. C. Wu, Y. T. Lin, H. H. Chiang, T. Y. Cho, C. W. Chen, K. T. Wong, Y. L. Liao, G. H. Lee, and S. M. Peng, Appl. Phys. Lett. 81, 577 (2002)
[26] C. Hosokawa, H. Higashi, H. Nakamura, T. Kusumoto, Appl. Phys. Lett. 67, 3853 (1995)
[27] C. W. Tang, Dig. 1996 SID INT. Symp., SID, San Diego, CA, p. 181（1996）
[28] C.H. Chen, C.W. Tang, J. Shi, K.P. Klubek, Macromol. Symp. 125, 49 (1997)
[29] Yuji Hamada, Hiroshi Kanno, Tsuyoshi Tsujioka, Hisakazu Takahashi, and Tatsuro Usuki, Appl. Phys. Lett. 75, 1682 (1999)
[30] A. A. Shoustikov, Y. You, M. E. Thompson, IEEE Joural. Selected. Topics. Quantum. Electron., 4, 3 (1998)
[31] 陳明榮, 工業材料雜誌, 188期, 145 (2002)
[32] C. Adachi, M. A. Baldo, S. R. Forrest, S. Lamansky, M. E. Thompson, R. C. Kwong, Appl. Phys. Lett. 78, 1622 (2001)
[33] E. M. Gross, N. R. Armstrong, R. M. Wightman, J. Electrochem. Soc. 149, E137 (2002)
[34] B. Carlson, L. R. Dalton, Appl. Phys. Lett., 80, 713 (2002)
[35] H. Rudmann, S. Shimada, M. F. Rubner, J. Am. Chem. Soc., 124, 4918 (2002)
[36]C. A. Adachi, R. C. Kwong, P. Djurovich, V. Adamovich, M. A. Baldo, M. E. Thompson, S. R. forrest, Appl. Phys. Lett., 79, 2082 (2001)
[37] G. Lei, L. Wang, Y. Qiu, Appl. Phys. Lett., 85, 5403 (2004)
[38]Y. F. Zhang, G. Cheng, Y. Zhao, J. Y. Hou, S. Y. Liu, Appl. Phys. Lett., 86, 011112 (2005)
[39] “平面及投影顯示器專題報告”光訊, vol. 98, 31 (2002)
[40] R. M. A. Dawson, Z. Shen, D. A. Furst, IWDM’98 p. 875 (1998)
[41] Y. He, R. Hattori, J. Kanicki, IEEE Elec. Dev. Lett, 21, 590 (2000)
[42] M. Stewart, R. S. Howell, F. Pires, IEEE Trans. Elec. Dev., 48, 845 (2001)
[43] G. Gu, V. Bulovic, P. E. Burrows, S. R. Forrest, M. E. Thompson, Appl. Phys. Lett., 68, 2606 (1996)
[44] G. Parthasarathy, P. E. Burrows, V. Khalfin, V. G. Kozlov, S. R. Forrest, Appl. Phys. Lett., 72, 2138 (1998)
[45] L. S. Hung, C. W. Tang, Appl. Phys. Lett. 74, 3209 (1999)
[46] G. Parthasarathy, C. Adachi, P. E. Burrows, S. R. Forrest, Appl. Phys. Lett., 76, 2128 (2000)
[47] L. S. Hung, C. W. Tang, M. G. Mason, P. Raychaudhuri, J. Madathil, Appl. Phys. Lett, 78, 544 (2001)
[48] M.-H. Lu, J. S. Weaver, T. X. Zhou, M. Rothman, R. C. Kwong, M. Hack, J. J. Brown, Appl. Phys. Lett., 81, 3921 (2002)
[49] S. Han, X. Feng, Z. H. Lu, Appl. Phys. Lett., 82, 2715 (2003)
[50] S. F. Hsu, C. C. Lee, A. T. Hu, C. H. Chen, Current. Appl. Phys., 4, 663 (2004)
[51] C. W. Chen, P. Y. Hsieh, H. H. Chiang, C. L. Lin, H. M. Wu, C. C. Wu, Appl. Phys. Lett., 83, 5127 (2003)
[52] C. Qiu, H. Peng, H. Chen, Z. Xie, M. Wong, H. S. Kwok, IEEE Trans. Electron. Dev. 51, 1207 (2004)
[53] R. B. Pode, C. J. Lee, D. G. Moon, J. I. Han, Appl. Phys. Lett., 84, 4614 (2004)
[54] T. Dobbertin, M. Kroeger, D. Heithecker, D. Schneider, D. Metzdorf, H. Neuner, E. Becker, H. –H. Johannes, W. Kowalsky, Appl. Phys. Lett., 82, 284 (2003)
[55] T. Dobbertin, O. Werner, J. Meyer, A. Kammoun, D. Schneider, T. Riedl, E. Becker, H. –H. Johannes, W. Kowalsky, Appl. Phys. Lett., 83, 5071 (2003)
[56] C. W. Chen, C. L. Lin, C. C. Wu, Appl. Phys. Lett., 85, 2469 (2004)
[57] H. Riel, S. Karg, T. Beierlein, W. RieB, K. Neyts, J. Appl. Phys., 94, 5290 (2003)
[58] C. Qiu, H. Chen, M. Wong and H. S. Kwok, IEEE. Trans. Electro. Devices, vol. 48, p. 2131 (2001)
[59] S. F. Hsu, C. C. Lee, A. T. Hu, C. H. Chen, 台灣顯示科技研討會論文集, 04-027, p. 340 (2004)
[60] Zhijun Wu, Shufen Chen, Huishan Yang, Yi Zhao, Jingying Hou, Shiyong Liu, Semicond. Sci. Technol. vol. 19, p. 1138 (2004)
[61] Yanqing Li, Li-Wei Tan, Xiao-Tao Hao, Kian Soo Ong, Furong Zhu, Liang-Sun Hung, Appl. Phys. Letts, vol. 86, p. 153508 (2005)