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論文名稱 Title |
InGaAs的電調制反射光譜 Electroreflectance spectroscopy of InGaAs |
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系所名稱 Department |
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畢業學年期 Year, semester |
語文別 Language |
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學位類別 Degree |
頁數 Number of pages |
69 |
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研究生 Author |
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指導教授 Advisor |
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召集委員 Convenor |
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口試委員 Advisory Committee |
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口試日期 Date of Exam |
2008-06-26 |
繳交日期 Date of Submission |
2008-06-27 |
關鍵字 Keywords |
半高寬、重電洞、波數 FWHM, heavy hole, wave number |
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統計 Statistics |
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中文摘要 |
對InxGa1-xAs薄膜在外加不同的偏壓下測量得到的電調制光譜。在光譜中大於能隙存在許多FKOs,且它們的電場強度(F)在薄膜中可以藉由FKOs的振盪週期得到。由於有很多FKOs的振盪,可利用快速Fourier轉換,分離出相對於重電洞與輕電洞的躍遷。F與Vbias之間接近線性關係。 在一個大的光能量範圍(δE),FKOs可以被觀察到。從δE與F的關係,載子的平均自由路徑可以被估計出來的,其值為35.9nm。我們可以藉由X-ray diffraction求得range of order,其值為32.47nm,來比較之。 |
Abstract |
The electroreflectance spectra(ER) have been measured on InxGa1-xAs film under various bias(Vbias), and they have exhibited many Franz-Keldysh Oscillations(FKOs) above band-gap energy. Their strength of field in the film can be obtained by the periods of FKOs. Due to many oscillations of FKOs, the Fast Fourier transform can be applied to separate heavy- and light-hole transitions. The relation between F and Vbias was nearly linear. FKOs were observable at a large range of photon energy(δE). The mean free path of carriers can be estimated from the relation between δE and F. It was compared with the range of order obtained from X-ray diffraction. |
目次 Table of Contents |
摘要……………………………………………………………i Abstract……………………………………………………ii 第一章 導論………………………………………………1 1.1 鍵結………………………………………………2 1.2 直接半導體與間接半導體………………………3 第二章 調制光譜…………………………………………5 2.1 調制光譜學簡介…………………………………5 2.2 調制光譜學機制…………………………………7 2.3 電子躍遷理論……………………………………9 2.4 介電係數與反射率關係…………………………12 2.5 有效質量…………………………………………17 2.6 譜線圖形分析……………………………………18 2.7 Franz-Keldysh Oscillation與asymptotic form……25 2.8 Fourier 轉換分析………………………………31 第三章 實驗量測與設計…………………………………33 3.1 實驗樣品…………………………………………33 3.2 樣品加工…………………………………………36 3.3 實驗架設…………………………………………38 第四章 實驗結果與討論…………………………………40 4.1 電場與外加電壓…………………………………40 4.2 與電場…………………………………………51 第五章 結論………………………………………………58 參考文獻 ……………………………………………………59 |
參考文獻 References |
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