本研究以電漿輔助式分子束磊晶(Plasma-Assisted Molecular Beam Epitaxy)，在LiGaO2(100)基板上成長高品質M-plane GaN薄膜。成長樣品前以原子力顯微鏡(AFM)觀察到LiGaO2(LGO)基板表面並不平整，我們利用稀釋後之磷酸水溶液做表面處理後，再由AFM量測發現經2分鐘磷酸蝕刻過後的基板有最佳的表面形貌。
我們成功的在LiGaO2(100)基板上成長M-plane GaN。並透過掃描式電子顯微鏡(SEM)及X-ray繞射儀量測後發現，提高成長溫度與拉長成長時間不僅能讓M-plane GaN單一面向成長，且對於表面平整度以及磊晶品質都有正面的幫助。以穿透式電子顯微鏡(TEM)觀察樣品的微結構，確定LGO基板與GaN薄膜有相當好的晶格匹配率，也發現到GaN薄膜內部的stacking fault 缺陷與 LGO基板表面的奈米顆粒結構有關。

In this thesis, we studied the growth of high quality M-plane GaN thin film on LiGaO₂ (100) substrate by Plasma-Assisted Molecular Beam Epitaxy. The scanning results of atomic force microscope (AFM) showed that the surface morphology of the substrate with acid treatment by using phosphoric acid for 2 minutes were flatter than other without acid treatment.
We found that it was helpful to improve the quality of M-plane GaN thin film on LGO (100) substrate by raising the growth temperature and expending the growth time. The smooth morphology of M-plane GaN thin film was observed by measurement of scanning electron microscope (SEM). The high crystal quality of M-plane GaN thin film was confirmed by X-ray diffraction (XRD). The microstructure measurement of transmission electron microscopy (TEM) obtained the low lattice mismatch in the interface between GaN and LGO. We also found that the stacking fault in GaN was attributed to unsmooth substrate surface which was hydrolyzed by steam.

第一章　前言 1
1-2量子侷限史塔克效應(Quantum Confined Stark Effect，QCSE) 5
1-3 b-LiGaO2文獻回顧 5
第二章 儀器介紹 6
2-1 X-ray繞射儀 (X-Ray Diffraction，XRD) 6
2-2掃描式電子顯微鏡 (Scanning electron microscope，SEM) 8
2-3原子力顯微鏡 (Atomic Force Microscope，AFM) 10
2-4反射式高能電子繞射(Reflection High Energy Electron Diffraction，RHEED) 12
2-5 光致螢光光譜(Photoluminescence，PL) 13
2-6 穿透式電子顯微鏡(Transmission Electron Microscope，TEM) 15
第三章 實驗結果與討論 17
3-1 -LiGaO2基板分析 17
3-2 成長參數 20
3-3 表面形貌分析 21
3-3-1 RHEED 21
3-3-2 SEM分析 22
3-4 XRD 分析 25
3-5 PL分析 30
3-6 TEM分析 33
第四章 結論 37
Reference 38

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