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博碩士論文 etd-0627116-105035 詳細資訊
Title page for etd-0627116-105035
論文名稱
Title
利用電漿輔助分子束磊晶之M-plane氮化鎵於氧化鋅微米柱異質結構之研究
Study of M-plane GaN on ZnO micro-rods heterostructures grown by plasma-assisted molecular beam epitaxy.
系所名稱
Department
畢業學年期
Year, semester
語文別
Language
學位類別
Degree
頁數
Number of pages
57
研究生
Author
指導教授
Advisor
召集委員
Convenor
口試委員
Advisory Committee
口試日期
Date of Exam
2016-07-14
繳交日期
Date of Submission
2016-07-27
關鍵字
Keywords
氮化鎵、氧化鋅、氮鎵比、異質結構、分子束磊晶、微米柱
molecular beam epitaxy, heterostucture, GaN, micro-rod, N/Ga ratio, ZnO
統計
Statistics
本論文已被瀏覽 5686 次,被下載 24
The thesis/dissertation has been browsed 5686 times, has been downloaded 24 times.
中文摘要
本篇論文探討在氧化鋅微米柱上使用電漿輔助分子束磊晶系統(Plasma-Assisted Molecular Beam Epitaxy,PA-MBE)成長氮化鎵之異質結構分析,藉由改變氮鎵含量之比例,找出能在M-plane氧化鋅微米柱成功成長M-plane氮化鎵之參數。
成長氮化鎵前,我們使用水熱法在矽基板表面上成長氧化鋅微米柱,並使用X-ray繞射(XRD)分析其晶格,使用掃描式電子顯微鏡(SEM)分析表面形貌。
使用電漿輔助分子束磊晶系統成長氮化鎵之後,我們使用穿隧式電子顯微鏡(TEM)來分析在M-plane氧化鋅微米柱成長的M-plane氮化鎵的微結構,在氧化鋅微米柱與M-plane氮化鎵的接觸面發現ZnGa2O4,這個結果可以從光致螢光光譜(PL)以及含量分析(EDS)的分析得到佐證和解釋。因此本論文說明了M-plane氧化鋅微米柱表面可以當作一個成長高純度的M-plane氮化鎵基板,若降低氮化鎵成長溫度,可避免ZnGa2O4以及缺陷的產生。
Abstract
This study described that we discussed M-plane GaN on M-plane ZnO micro-rods heterostructures grown by plasma-assisted molecular beam epitaxy. By changing the ratio of Ga/N to find a suitable surrounding to grow M-plane GaN on M-plane ZnO micro-rods.
Before growing GaN, ZnO micro-rods was grown on Si substrates by hydrothermal method. We analysis the crystalline by X-ray diffraction, the surface morphology by Scanning Electronic Microscopy, and microstructure by Transmission Electron Microscopy.
Then GaN epi-layer was grown on ZnO micro-rods, we analysis the surface morphology by Scanning Electronic Microscopy, and microstructure by Transmission Electron Microscopy. At the GaN/ZnO hetero-interface, other phase ZnGa2O4 was found by Selective Area Diffraction patterns and polarization-dependence Photoluminescence measurements. The Spinel ZnGa2O4 structure induced stacking faults at the M-plane GaN epi-layer, this can be proved by Energy-dispersive X-ray spectroscopy and PL measurements.
We demonstrated that M-plane ZnO micro-rods can be a substrate to grow high quality M-plane GaN. If decreasing the growing temperature, we can prevent ZnO from decomposing and prevent ZnGa2O4 and defects from appearing.
目次 Table of Contents
論文審定書
致謝 iii

中文摘要 iv
Abstract v

第一章 簡介 1

第二章 儀器原理 8
2-1 X-ray 繞射儀 8
2-2 掃描式電子顯微鏡(SEM) 11
2-3穿透式電子顯微鏡(TEM) 14
2-4 聚焦離子束(FIB) 16
2-5 光致發光光譜原理(photoluminescence,PL) 18

第三章 實驗結果與分析 21
3-1 樣品準備與參數 21
4-2氧化鋅微米柱在Si (100) 基板上之特性分析 22
3-3在氧化鋅(1010)微米柱成長氮化鎵之表面形貌分析 24
3-4在氧化鋅(1100)微米柱成長的氮化鎵之TEM分析 27
3-5 Two beam condition下M-plane氮化鎵之微結構分析 38
3-6 氧化鋅與M-plane氮化鎵異質接面STEM影像與EDS含量分析 40
3-7 在M-plane氧化鋅微米柱成長M-plane氮化鎵光學性質分析 42

第四章 結論 44
參考文獻 45
參考文獻 References
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