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博碩士論文 etd-0628101-145501 詳細資訊
Title page for etd-0628101-145501
論文名稱
Title
濺鍍氮化鋯擴散阻礙層特性之研究
Characterization of Sputtered ZrN Diffusion Barrier
系所名稱
Department
畢業學年期
Year, semester
語文別
Language
學位類別
Degree
頁數
Number of pages
89
研究生
Author
指導教授
Advisor
召集委員
Convenor
口試委員
Advisory Committee
口試日期
Date of Exam
2001-06-19
繳交日期
Date of Submission
2001-06-28
關鍵字
Keywords
濺鍍、薄膜、氮化鋯、微結構
microstructure, sputtering, thin film, ZrN
統計
Statistics
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The thesis/dissertation has been browsed 5642 times, has been downloaded 19581 times.
中文摘要

摘要
近年來為降低鋁導線的電阻值及電遷移率,將使用電阻低以及抗電致遷移率更佳的銅來取代。為避免銅擴散到矽元件造成元件退化,故而需要有效防止擴散之阻礙層。氮化鋯符合擴散阻礙層低電阻、高熔點等特性,本實驗即分析氮化鋯作為擴散阻礙層之可行性。成長氮化鋯薄膜所使用的是反應性射頻磁控濺鍍系統,改變製程參數,如工作壓力、濺鍍時的瓦數、時間、氮氣流量、氬氣流量以及鋯靶或氮化鋯靶等對所成長薄膜的影響。將濺鍍後的氮化鋯及純鋯薄膜經過400 ℃至700 ℃ 30分鐘的退火,以研究性能及變化情形。本研究利用XRD分析結晶情形,SEM觀察厚度及型態,TEM分析薄膜顯微結構,以及AFM分析表面粗糙度。並使用四點探針法量測不同氮氣流量、不同退火溫度所造成薄膜不同的電阻率。
實驗結果指出純鋯薄膜經過550 ℃ 30分鐘退火,在XRD以及TEM中都明確的顯示出銅矽化合物,其阻礙層已經失效。在氮化鋯薄膜方面,經過650 ℃ 30分鐘退火,顯示出CuZr2的相,但銅與矽基板尚無反應,尚未失去阻礙效果。提高退火溫度到700 ℃時,產生Cu3Si化合物,表示已經發生擴散。目前之結果顯示氮化鋯薄膜可作為銅與矽基版間很好的擴散阻礙層。


Abstract
Abstract
Recently Cu has been used as a replacement of Al in microelectronics industry to its lower electrical resistivity and higher electromigration resistance than aluminum. It is essential to have high performance diffusion barrier to suppress the diffusion between Cu and Si . In this experiment ZrN was investigated as a possible diffusion barrier. All coatings were deposited by RF magnetron reactive sputtering system. The growth of ZrN has been evaluted at different vacuum condition、RF power、growth time、N2 flow rate Ar flow rate and Zr or ZrN target. The thin films were then annealed at temperatures from 450 ℃ to 700 ℃ for 30 min to study its durability. In this work XRD was used to study the thin film structure, SEM and TEM study the microstructures and AFM to study the surface roughness . The film’s resistivity was measured as a function of N2 flow rate and annealing temperature by four point probe .
For pure Zr film Cu3Si phase has formed after annealing at 550 ℃ for 30 min . As to ZrN film, only CuZr2 is present after annealing at 650 ℃ for 30 min indicating the diffusion barrier is still effective. After annealing at 700 ℃ for 30 min, Cu3Si was detected indicating the failure of the diffusion barrier. Results up to now suggest that ZrN layer can be a successful candidate as a diffusion barrier between Cu and Si.
















目次 Table of Contents
目錄
摘要……………………………………………………………………...i
表目錄………………………………………………………………….Ⅳ
圖目錄………………………………………………………………….Ⅵ
1、前言 1
2、簡介 3
2-1 擴散阻礙層 3
2-1.1擴散阻礙層的定義及特性 3
2-1.2擴散阻礙層的種類 4
2-2 濺鍍原理 5
2-2.1 輝光放電 6
2-2.2濺鍍裝置……………………………………………………7
2-3 文獻資料………………………………………………………..8
2-4 濺鍍參數之影響 ……………………………………………..11
3、實驗方法 …………………………………………………………12
3-1 氮化鋯薄膜成長 12
3-1.1 實驗材料 12
3-1.2 試片的清洗流程 13
3-1.3 濺鍍的流程 14
3-2 X光繞射分析 15
3-3 掃描式電子顯微鏡 16
3-4 穿透式電子顯微鏡 16
3-5 表面形貌量測儀 17
3-6 電性量測 17
3-7 原子力顯微鏡 17
4、結果分析…… 19
4-1 氮化鋯薄膜之厚度 19
4-2 氮化鋯薄膜之X光繞射分析 19
4-3 氮化鋯薄膜之掃描式電子顯微鏡(SEM)分析 19
4-4 氮化鋯薄膜之穿透式電子顯微鏡(TEM)分析 22
4.4.1 表面(top view)的TEM觀察……………………………….22
4.4.2 橫截面(cross section)的TEM觀察………………………..23
4-5 氮化鋯薄膜之原子力顯微鏡(AFM)分析 24
4-6 氮化鋯薄膜之電阻率(resistivity)的分析 24
5、討論 26
5.1氮化鋯之成長機制………………………………………………26
5.2氮化鋯界面之擴散情形…………………………………………27
6、結論…………………………………………………………………30
7、未來研究方向 31
8、參考文獻 32


表目錄
表1 Cu、Al、Au、Ag與W金屬之比較……………………………36
表2常見擴散阻礙層材料之特性比較……………………………….37
表3氮化鋯的基本性質 38
表4濺鍍參數對氮化鋯造成影響之整理 39
表5 試片代號,製備條件及薄膜濺鍍速率…………………………40
表6 : 試片D-1(N=0)之 (1)as-deposited、(2)550℃退火、(3)600℃退火熱處理30分鐘圖12之XRD之分析……………………...………44
表 7 : 試片D-4(N=3) (1)as-deposited、(2)650℃退火、(3)700℃退火 熱處理30分鐘圖13之XRD之分析…………………………...……45
表 8 : 試片D-1(N=0)圖14之grancing-angle XRD之分析……..….46
表 9 : 試片D-2(N=1)圖14之grancing-angle XRD之分析………...46
表10: 試片D-3(N=2)圖14之grancing-angle XRD之分析………...47
表11: 試片D-4(N=3)圖14之grancing-angle XRD之分析…………47
表12為圖18(b)由內而外的Miller Indices依序分析………………..48
表13為圖19(b)由內而外的Miller Indices依序分析………………..48
表14為圖20(b)由內而外的Miller Indices依序分析………………..49
表15為圖21(b)由內而外的Miller Indices依序分析………………..49
表16為圖21(c)由內而外的Miller Indices依序分析………………..50
表17不同氮氣濃度的表面粗糙度 51

圖目錄
圖1 擴散阻礙層示意圖 52
圖2 產生電漿之偏壓之模式…………………………………………53
圖3 陰極暗區電壓分佈圖 54
圖4 射頻裝置的陰極電位變化與靜電流變化的關係 55
圖5 氮化鋯相圖 56
圖6 實驗流程圖 57
圖7試片清洗流程圖 58
圖8 射頻濺鍍儀器裝置圖 59
圖9 α-step的簡圖 60
圖10 四點探測儀的簡圖 60
圖11 原子力顯微鏡簡圖 61
圖12 為當濺鍍瓦數100瓦、5mTorr、氬氣濃度28sccm、氮氣濃度N2=0、成長1.5分鐘所濺鍍沈積之純鋯擴散阻礙層之阻礙機制分別為as-deposition與分別經過550℃、600℃退火熱處理30分鐘後的XRD……………………………………………………………………62
圖13為濺鍍瓦數100瓦、5mTorr、氬氣濃度28sccm、氮氣濃度N2=3、成長1.5分鐘所濺鍍沈積之氮化鋯擴散阻礙層之阻礙機制在經過650℃、700℃退火熱處理30分鐘後的XRD……………………………63
圖14為濺鍍瓦數100瓦、5mTorr、氬氣濃度28sccm、氮氣濃度N2=0、1、2、3,成長1.5分鐘所濺鍍沈積之氮化鋯擴散阻礙層的XRD..64
圖15試片D-4(N=3)的橫截面 FESEM……………………………...65
圖16 為A-5試片橫截面之FESEM…………………………………66
圖17(a)為接面處所得的矽基版之明視野(BF)像……………………67
圖17(b)為其暗視野像(DF)……………………………………………67
圖17(c)表示矽基版的選區繞射圖(SADP)……………………………68
圖18(a)是氮化鋯的表面型態微結構………………………………….68
圖18(b)氮化鋯的繞射環……………………………………………….69
圖19(a)高倍的氮化鋯表面型..……………………….……………… .69
圖19(b) 氮化鋯的選區繞射環(SADP)存在…………………………..70
圖20(a)是D-1(N=0)組的試片,鋯的表面型態………………………70
圖20(b)為鋯的繞射環………………………………………………….71
圖21(a) 可以輕易的分辨出矽基版、氮化鋯薄膜、銅層與其界面(interface)之間的接合情形…………………………………………….72
圖21(b) 為A部份的氮化鋯層繞射圖形…………………………….72
圖21(c) 為B部份的銅層繞射圖形…………………………………..73
圖22(a) D-4 (N=3) Cu/ZrN/Si 試片的明視野像……………………...74
圖22(b) D-4 (N=3) Cu/ZrN/Si 試片的暗視野像……………………...74
圖22(c)氮化鋯層的micro diffraction圖形(zone axis=<011>)………...75
圖22(d)氮化鋯層的micro diffraction圖形(zone axis=<112>)……….75
圖22(e)銅層的繞射圖形………………………………………………76
圖22(f)銅層的micro diffraction圖形(zone axis=<011>)…...……..…76
圖23(a) D-4 (N=3) ZrN/Si 試片的高倍明視野像……..……………..77
圖23(b) D-4 (N=3) ZrN/Si 試片的高倍暗視野像……..……………..77
圖23(c)氮化鋯的micro diffraction圖形(zone axis=<011>)……...…..78
圖24 N=0(AFM) ……………………………………………………79
圖25 N=1(AFM) 79
圖26 N=2(AFM) 80
圖27 N=3(AFM) 80
圖28不同氮氣流量的電阻率 81
圖29不同氮氣流量的電阻 82
圖30 Cu-Zr相圖……………………………………………………….83
圖31 Si-Zr相圖.……………………………………………………….84
圖32 Cu-Si相圖……………………………………………………….85
圖33 JCPDS CARD 31-1493…..………………………………………86
圖34 JCPDS CARD 5-0665..……………………………..……………86
圖35 JCPDS CARD 18-466……………………………………………87
圖36 JCPDS CARD 23-224……………………………………………87
圖37 JCPDS CARD 10-236……………………………………………88
圖38 JCPDS CARD 5-0565……………………………………………88
圖39 JCPDS CARD 4-0836……………………………………………89
圖40 JCPDS CARD 4-0841……………………………………………89


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