多層量子井結構之量子侷限史塔克效應已被廣泛應用於製作電致吸收光調變器；InGaAs / InGaAlAs材料因其高能帶補償比（導電帶對價電帶）與強烈激子（電子電洞對）共振效應，為製造1.55μm通訊波長光調變器之絕佳材料。
論文中，架構量子井吸收係數計算模型並應用於設計電致吸收光調變器主動層結構；插入非對稱針狀位能勢於寬量子井中，使其保有高波長變化率，同時降低波函數重疊積分對偏壓之敏度感，來得到優異的光調變效率；此外，並調配四元材料組合參數（~-0.4% 伸張形變），使元件具備極化不敏感之特性。
本文亦製作出InGaAs / InGaAlAs材料之行波式電致吸收光調變器。量測元件特性，不同模態光傳輸係數差約2~5 dB；1V驅動電壓下消光比達15 dB；於高速電光頻率響應上，業已量測出有超過20GHz之頻寬。

Multiple-quantum-well (M.Q.W.) and quantum-confined-stark-effect (Q.C.S.E.) have been widely used in designing and fabricating electroabsorption modulators. In this paper, material InAlAs/InGaAlAs near 1500nm transition is used to be our target for designing and fabricating EAM due to its high band-offset ratio (electron to hole) and the strong exciton effect.
A calculation model for quantum well absorption has been developed to design EAM active region. Asymmetrically inserting a thin-spiked potential barrier into wide Q.W. structure, the Q.W. can have high efficiency of Q.C.S.E. without lowing the electron-hole wave function overlap integral, causing high electroabsorption coefficient and optical modulation. Tuning material composition (~-0.4% tensile strain ) is also used for polarization independence characteristics.
Traveling-wave EAM based on InAlAs / InGaAlAs material system is also fabricated and measured. Polarization independence 2~5 dB operation, low voltage swing of 1V for 15 dB extinction ratio, high-speed electrical-to-optical response with –3dB bandwidth of >20GHz at 50Ω termination have been achieved showing high potential in broad band fiber optical communication.

目錄

第一章 序論 ……………………………………………………………1
1.1 前言…………………………………………………………………1
1.2 研究動機……………………………………………………………1
1.3 論文架構……………………………………………………………3
第二章 理論 ……………………………………………………………4
2.1 光電半導體…………………………………………………………4
2.2 吸收係數……………………………………………………………5
2.3 晶格形變材料之量子井定義 ……………………………………10
2.4 量子侷限史塔克效應（Q.C.S.E.） ……………………………16
2.5 電子波函數溢漏 …………………………………………………19
2.6 結論 ………………………………………………………………23
第三章 光波導材料結構設計…………………………………………24
3.1 量子井基態能階與波函數計算 …………………………………24
3.2 電致吸收光調變器光傳輸係數 …………………………………29
3.3 電致吸收光調變器量子井設計目標 ……………………………31
3.4 極化不敏感 ………………………………………………………32
3.5 非對稱針狀位能勢量子井 ………………………………………37
3.6 電致吸收光調變器材料結構 ……………………………………44
3.7 結論 ………………………………………………………………46
第四章 行波式電致吸收光調變之製作………………………………47
4.1 行波式電致吸收光調變之概述 …………………………………47
4.2 元件製程 …………………………………………………………48
4.3 結論 ………………………………………………………………60
第五章 元件特性量測…………………………………………………61
5.1 金半接觸電阻 ……………………………………………………61
5.2 微波訊號S參數 …………………………………………………63
5.3 光波導傳輸係數 …………………………………………………65
5.4 電-光頻率響應……………………………………………………66
5.5 相關製程討論 ……………………………………………………67
第六章 結論……………………………………………………………69

參考文獻 ………………………………………………………………70

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