近年來光通訊產業需求的急速發展，造成寬頻雷射光源應用於光傳輸網路系統中的需求增加，而摻鉻釔鋁石榴石(Cr4+:YAG)晶體光纖的寬頻特性，使其具有不可或缺的重要性。但Cr4+:YAG晶體光纖在重覆生長的過程中，隨著生長次數及生長時間的增加，使得Cr2O3濃度及Cr

Due to the fast expansion and development in the optical communication industry, the demand for the broad-band laser light source as used to the optical transmission network system has correspondingly increased. Cr4+ doped YAG crystal fibers, with its broad-band spectral property, is thus becoming more and more indispensable to the growth of the industry. However, the Cr4+:YAG crystal fiber in its own repetitive growth process brings with itself one problem: after each re-growth, the concentration of Cr2O3 and Cr4+ ions would reduce appreciatively. Hence, finding sound solutions for effectively raising the concentration of Cr4+ is now becoming an essential issue in the field.

The thesis mainly focuses on the development of using Cr4+:YAG as the laser gain medium. Thin layers of CaO, MgO, and Cr2O3 was coated on the circumference of the Cr:YAG crystal fiber. The LHPG method was then employed to re-grow the coated samples, during which the doped concentration of CaO, MgO and Cr2O3 can in-diffuse. And the effect of charge compensation would go further to simultaneously raise the concentration of Cr4+ ions. Now we have successfully enhance the concentration of Cr4+ ions to 4.86x10-3 wt.%.

This study, with the use of the E-Gun coating machine and the IAD (ion-beam assisted deposition) system, also probes the technical side of how to better improve the quality of the crystal fiber laser. Both end faces of the Cr4+:YAG crystal fiber were coated with optical thin films by TiO2 and SiO2 targets. In addition to raise the quality of the thin films, the IAD system also functions to create a laser cavity in which both the anti-reflectance (AR) effect (for pumping the light source) and the high reflectance (HR) effect (for stimulating the light source) are achieved. The accompanied benefits would be the reduction of transmission loss, the increased laser efficiency, and thus a more successful and more stable crystal fiber laser.

中文摘要
英文摘要
目錄
圖目錄
表目錄

第一章 緒論
1.1 寬頻雷射光源簡介
1.2 Cr4+:YAG晶體光纖側鍍之動機
1.3 論文簡介
第二章 Cr4+:YAG晶體光纖生長特性
2.1 YAG晶體結構
2.2 電荷補償效應
2.3 LHPG生長系統
第三章 光學薄膜理論分析與蒸鍍系統
3.1 光學薄膜特性與設計理論分析
3.1.1 膜層材料特性分析
3.1.2 光學薄膜設計理論
3.1.2 膜層內電場強度分佈
3.2 電子槍蒸鍍系統
3.2.1 真空系統與電子槍原理
3.2.2 側鍍實驗架構流程
3.2.3 膜層厚度量測分析
3.3 雷射共振腔
3.3.1 共振腔架構
3.3.2 Cr4+:YAG晶體光纖端面鍍膜
3.3.3 Cr4+:YAG晶體光纖製鍍樣品
第四章 Cr4+:YAG晶體光纖側鍍數據分析
4.1 電子微探儀量測結果分析
4.2 晶格缺陷密度分析
4.3 Cr4+螢光強度量測分析
4.3.1側鍍CaO&Cr2O3螢光強度分析
4.3.2側鍍MgO&Cr2O3螢光強度分析
4.3.3側鍍CaO&MgO&Cr2O3螢光強度分析
第五章 總結

參考文獻
中英對照表

[1] J. E. Geusic, H. M. Marcos, and L. G. Van Uitert, "Laser oscillation in Nd-doped yttrium aluminum, yttrium gallium and gadolinium garnets," Applied Physics Letters, 4, 182 (1964).
[2] P. P. Sorokin and M. J. Stevenson, "Stimulated infrared emission from trivalent uranium," Physical Review Letters, 5, 557 (1960).
[3] E. Snitzer, "Optical maser action of Nd3+ in a Barium crown glass," Physical Review Letters, 7, 444 (1961).
[4] L. D. DeLoach, R. H. Page, G. D. Wilke, S. A. Payne, and W. F. Krupke, "Transition metal-doped zinc chalcogenides: spectroscopy and laser demonstration of a new class of gain media," IEEE Journal of Quantum Electronics, 32, 885 (1996).
[5] G. J. Wagner, T. J. Carrig, R. H. Page, K. I. Schaffers, J. O. Ndap, X. Ma, and A. Burger, "Continuous-wave broadly tunable Cr2+:ZnSe laser," Optics Letters, 24, 19 (1999).
[6] N. B. Angert, N. I. Borodin, V. M. Garmash, V. A. Zhiynyuk, A.G. Okhrimchuck, O. G. Siyuchenko, and A. V. Shestakov, "Lasing due to impurity color centers in yttrium aluminum garnet crystals at wavelengths in the range 1.35-1.45