本論文的研究目的是以多孔隙氧化銦錫/氧化銦錫之多層堆疊結構做為布拉格反射鏡，並將此布拉格反射鏡用於製作共振腔（Resonant cavity, RC）有機發光二極體元件（Organic light emitting diodes, OLED）。在布拉格反射鏡的製程上，低折射率的多孔隙氧化銦錫是由超臨界CO2流體於不同的溫度及壓力的製程條件下作用於溶凝膠狀的氧化銦錫(Sol-gel ITO)而成；高折射率的氧化銦錫薄膜則由磁式濺鍍法於室溫條件下成長。多孔隙氧化銦錫及濺鍍氧化銦錫薄膜的折射率分別為1.54及2.0，在相互堆疊四個pair之後，在光譜波長為550 nm處的反射率可大於70 %，截止帶寬為140 nm，整體電阻率約為2.2×10-3 Ωcm。最後，我們會將此反射鏡應用於共振腔有機發光二極體，元件完成後將量測其發光頻譜、電流密度-電壓、發光亮度-電流密度及發光效率-電流密度等特性。

In the study, conductive distributed Bragg reflectors (DBRs) fabricated at room temperature based on porous indium tin oxide (ITO) on dense ITO bilayers were proposed for resonant cavity organic light emitting diodes (RCOLEDs). In the fabrication of the ITO DBRs, the low refractive index porous ITO films were obtained by applying supercritical CO2 treatment at different temperature and pressures on the spin-coated sol-gel ITO films. On the other hand, the high refractive index ITO films were grown at room temperature by long-throw reactive ratio-frequency magnetron sputtering. The refractive index of the porous ITO film and ITO films were 1.54 and 2.0, respectively. For the DBR with 4 pairs ITO bilayers, the optical reflectance of more than 70 % was achieved. The stop band and the average resistivity is 140 nm and 2.2×10-3 Ω-cm, respectively. Finally, electrical and optical characteristics of the RCOLEDs fabricated on the ITO DBR were investigated and compared with those of the conventional OLEDs. The maximum luminous efficiency of 3.79 cd/A was obtained at 347 mA/cm2 for the RCOLED. This luminous efficiency was 26 % higher than that of the conventional OLED.

中文論文審定書 II
英文論文審定書 III
致謝 IV
摘要 V
Abstract VI
第一章 導論 5
1-1引言 5
1-2 有機發光二極體(OLED)原理 6
1-3分佈式布拉格反射鏡(Distributed Bragg reflectors) 8
1-3-1分佈式布拉格反射鏡(DBR)原理 10
1-3-1導電式布拉格反射鏡研究 13
1-4 Fabry-Perot Cavity 理論 14
1-5具微共振腔有機發光二極體結構原理 16
1-6研究動機 18
第二章 製程材料與儀器介紹 20
2-1 氧化銦錫(ITO)與溶凝膠狀氧化銦錫(sol-gel ITO) 20
2-2 Radio-frequency(RF)磁式濺鍍系統 22
2-3 真空蒸鍍系統(Thermal evaporator) 24
2-4 超臨界系統 25
2-5 活性離子乾蝕刻機(Reactive Ion Etching) 28
2-6 量測儀器介紹 29
2-6-1 四點探針(Four-point-probe) 29
2-6-2 薄膜特性分析儀(n&k analyzer) 30
2-6-3 場發射型掃描式電子顯微鏡(SEM) 30
2-6-4 原子力顯微鏡(Atomic Force Microscope) 30
2-6-5 光譜色度儀(PR650) 31
第三章 實驗步驟 33
3-1材料成長條件 33
3-1-1氧化銦錫 33
3-1-2溶凝膠狀氧化銦錫 34
3-2元件製程流程 36
3-2-1布拉格反射鏡暨電極堆疊流程 37
3-2-2有機發光二極體元件製程 38
第四章 結果與討論 40
4-1氧化銦錫布拉格反射鏡分析 40
4-1-1 氧化銦錫布拉格反射鏡光性量測 40
4-1-2 氧化銦錫布拉格反射鏡電性量測 41
4-1-3 氧化銦錫布拉格反射境表面形貌分析 42
4-2 共振腔有機發光二極體量測結果分析 43
4-2-1 發光頻譜 43
4-2-2 電流密度-電壓圖 44
4-2-3 發光亮度-電流密度圖 45
4-2-4 發光效率-電流密度圖 46
4-2-5 色度座標圖 48
第五章 結論 49
參考文獻 50

[1] 陳金鑫，黃孝文， “OLED：Materials and Devices of Dream Displays”，五南圖書出版股份有限公司，2007。
[2] Universal Display corporation,2004.
[3] Ki Ho So, “Synthesis and characterization of a new iridium(III) complex with bulky trimethylsilylxylene and applications for efficient yellow-green emitting phosphorescent organic light emitting diodes”, Dyes and Pigments 92,2011.
[4] YannG.Boucher, “Photoluminescence spectra of an optically pumped erbium-doped micro-cavitywith SiO2/TiO2 distributed Bragg reflectors”, Journal of Luminescence 129 ,2009.
[5] M. Tanaka, “Enhancement of magneto-optical effect in a GaAs : MnAs hybrid nanostructure sandwiched by GaAs/AlAs distributed Bragg reflectors: epitaxial semiconductor-based magneto-photonic crystal”, Journal of Crystal Growth 227–228 ,2001.
[6] Eugene Hecht, “OPTIC”, Addison-Wesley,p.426–p.430,2002.
[7] Martin F. Schubert, “Distributed Bragg reflector consisting of high- and low-refractive-index thin film layers made of the same material”,APPLIED PHYSICS LETTERS 90, 2007.
[8] Daniel P. Puzzo, “Organic Light-Emitting Diode Microcavities from Transparent Conducting Metal Oxide Photonic Crystals”,Nano Lett. 2011.
[9] Eugene Hecht, “OPTIC”, Addison-Wesley,2002.
[10] 陳金鑫，黃孝文，“OLED：Materials and Devices of Dream Displays”，五南圖書出版股份有限公司，2007。
[11] M. Quaas, “Structural studies of ITO thin films with the Rietveld method”, Thin Solid Films 332 ,1998.
[12] Z.M.jarzebski, “Preparation and physical properties of transparent conducting oxide films”, Phys. Star. Sol. A71,1982.
[13] Carrie Donley, “Characterization of Indium-Tin Oxide Interfaces Using X-ray Photoelectron Spectroscopy and Redox Processes of a Chemisorbed Probe Molecule: Effect of Surface Pretreatment Conditions”, Langmuir ,2002.
[14] Yu-Zong Tsai, “Sol-Gel-Derived Transparent Conducting Oxide Films”, CHEMISTRY (THE CHINESE CHEM. SOC., TAIPEI) SEP,2002 .
[15] Hong Xiao, “Introduction to semiconductor manufacturing technology”, Ch5, Prentice Hall,2000.
[16] B. Yaglioglu‚“High-mobility amorphous In2O3 –10 wt% ZnO thin film transistors”‚ Appl. Phys. Lett. 89‚062103,2006.
[17] K. Zosel and Angew, “Separation with supercritical gases : Practical applications”, Chem. Int. Ed. Engl, 1978.
[18] WALTER LEITNER, “Supercritical Carbon Dioxide as a Green Reaction Medium for Catalysis”, Acc. Chem. Res,2002.
[19] 張學明，「超臨界流體技術於生醫材料中之應用」， P154-P166，化工技術，第11期，2007。
[20] Alvin H. Romang and James J. Watkins, “Supercritical Fluids for the Fabrication of Semiconductor Devices: Emerging or Missed Opportunities?”, Chem. Rev,2010.
[21] Subramanyam B, “Pharmaceutical processing with Subcritical carbon dioxide＂,J. Pharm. Sci.,1997.
[22] Michael Quirk and Julian Serda, “Semiconductor Manufacturing Technology＂, Prentice Hall,2000.
[23] John C. Vickerman, “Surface Analysis- The Principal Techniques”, Chapter 9, p.479–p.562, John Wiley & Sons,2009.
[24] 陳一帆，“磁式濺鍍氧化銦錫薄膜沉積之後熱處理效應”，國立中山大學光電工程研究所碩士論文，2007。
[25] Wei-Chen Tien, “Porous Metal Oxides and Their Applications”,Department of Photonics National Sun Yat-sen University Doctorate Dissertation,2012.