自石墨烯發現以來，石墨烯材料具有高電荷傳輸、高導熱係數、穿透率佳、堅韌的機械性質…等獨特物理特性，使石墨烯成為相當有潛力的次世代材料。最近，石墨烯被廣泛的被運用在電子元件、光電元件、感測器、奈米複合材料和儲能裝置。
本研究分為兩大主軸，場發射源-石墨烯的成長與探討不同層數石墨烯的場發射性質。第一，在石墨烯的成長及材料分析方面，化學氣相沉積法成長大面積的石墨烯在銅箔上，以堆疊的方式讓單層石墨烯形成多層石墨烯，並利用拉曼光譜、電子顯微鏡，探討不同層數的石墨烯的材料特性。在實際分析上，拉曼光譜為碳材料相當重要的分析工具，不僅能快速且無破壞性的量測碳材料上的結構及缺陷，甚至能判斷石墨烯的層數，對於各層數石墨烯的晶體結構、表面型態及電導率分析完後，在進行場發射量測。
第二，在探討石墨烯的電子場發射特性前，發現化學氣相沉積法製備的石墨烯過於平坦，使石墨烯原本具備的奈米結構的深寬比特性很差，若表面深寬比過低，很難形成場發射電流，為了增加表面深寬比 (aspect ratio)，在場發射量測方面，本研究利用1、2、3、5層石墨烯，探討不同層數氬電漿處理前與處理後的石墨烯的場發射特性，發現與原生石墨烯比較氬電漿功率在40W時，其起始電場 (turn-on field) 從7.8 V⁄μm降至6.2 V⁄μm，且場增強因子β從1154上升至2089，顯示氬電漿處理後的石墨烯擁有相當良好的場發射性質。

Since graphene was discovered by K. S. Novoselov and A.K. Geim. Graphene has unique physical properties, such as exceptional charge transport , thermal, optical, and mechanical properties make graphene a promising material for nano-electronics. In Recent, graphene-based materials has attracted great attention in various application, such as electronic and optoelectronic devices, sensors, nanocomposites and energy storage devices.
In this work, field emission material, graphene was synthesized by using chemical vapor deposition method (CVD) which shows the obvious advantages of low cost and easy for scale-up production. Few-layer was synthesized by stacking monolayer graphene. The material characteristic is measured by four-point probe, scanning electron microscope (SEM), Raman spectroscopy.
The morphology of samples is studied by scanning electron microscope (SEM), the sheet resistance and conductivity is measured by four-point probe. Raman spectroscopy is a powerful tool to characterize the different types of carbon material, can quick and non-destructive measure carbon material.
Graphene is analyzed the number of layers, quality and crystal structures by Raman spectroscopy. Before investigate the electron field emission properties of graphene, Analysis of SEM discovered graphene films without high aspect ratio. Field emission electrons is difficult to tunneling barrier. In this work, using Ar plasma treatment to improve surface morphology of graphene. The graphene using Ar plasma treatment exhibits better emission capability, characterized by turn-on fields as low as 6.2 V⁄μm and field amplification factors up to 2089.

致謝 ii
摘要 iii
Abstract iv
目錄 v
圖目錄 vii
表目錄 x
第 1 章 緒論 1
1.1 文獻回顧 1
1.1.1 石墨烯簡介 1
1.1.2 石墨烯製備方法 2
1.1.3 石墨烯應用於場發射元件 10
1.2 研究動機 15
1.3 研究方法與論文架構 16
第 2 章 原理 17
2.1 石墨烯的理論 17
2.1.1 單層石墨烯基礎理論 17
2.1.2 電子傳輸特性 19
2.1.3 光學特性 20
2.1.4 雙層與多層石墨烯結構 21
2.2 電子發射理論 23
2.2.1 電子發射型態 23
2.2.2 Fowler-Nordheim theory 23
2.3 儀器原理 25
2.3.1 製程儀器 25
2.3.2 量測儀器 31
第 3 章 實驗流程 42
3.1 石墨烯製備 42
3.1.1 基板清洗 42
3.1.2 沉積石墨烯 43
3.2 元件製成步驟 45
3.2.1 上板製作(接收端) 45
3.2.2 下板製作(發射端) 46
3.3 場發射元件量測 47
3.3.1 電性量測 47
3.3.2 光性量測 47
第 4 章 實驗結果 48
4.1 材料分析 48
4.1.1 拉曼光譜分析 48
4.1.2 電子顯微鏡分析(SEM) 52
4.2 場發射實驗 54
4.3 透明電極 59
4.4 場發射發光特性 59
第 5 章 結論 60
參考文獻 61

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